Rambus Inc. (NASDAQ: RMBS), a premier silicon IP and chip provider making data faster and safer, today announced it has achieved a record 4 Gbps performance with the Rambus HBM2E memory interface solution consisting of a fully-integrated PHY and controller. Paired with the industry's fastest HBM2E DRAM from SK hynix operating at 3.6 Gbps, the solution can deliver 460 GB/s of bandwidth from a single HBM2E device. This performance meets the terabyte-scale bandwidth needs of accelerators targeting the most demanding AI/ML training and high-performance computing (HPC) applications.

"With this achievement by Rambus, designers of AI and HPC systems can now implement systems using the world's fastest HBM2E DRAM running at 3.6 Gbps from SK hynix," said Uksong Kang, vice president of product planning at SK hynix. "In July, we announced full-scale mass-production of HBM2E for state-of-the-art computing applications demanding the highest bandwidth available."

TSMC on Monday kicked off a virtual tech symposium, where it announced its new 12 nm N12e node for IoT edge devices, announced the new 3DFabric Technology, and detailed progress on its upcoming 5 nm N5 and 3 nm N3 silicon fabrication nodes. The company maintains that the N5 (5 nm) node offers the benefits of a full node uplift over its current-gen N7 (7 nm), which recently clocked over 1 billion chips shipped. The N5 node incorporates EUV lithography more extensively than N6/N7+, and in comparison to N7 offers 30% better power at the same performance, 15% more performance at the same power, and an 80% increase in logic density. The company has commenced high-volume manufacturing on this node.

2021 will see the introduction and ramp-up of the N5P node, an enhancement of the 5 nm N5 node, offering a 10% improvement in power at the same performance, or 5% increase in performance at the same power. A nodelet of the N5 family of nodes, called N4, could see risk production in Q4 2021. The N4 node is advertised as "4 nm," although the company didn't get into its iso-power/iso-performance specifics over the N5 node. The next major node for TSMC will be the 3 nm N3 node, with massive 25%-30% improvement in power at the same performance, or 10%-15% improvement in performance at same power, compared to N5. It also offers a 70% logic density gain over N5. 3DFabric technology is a new umbrella term for TSMC's CoWoS (chip on wafer on substrate), CoW (chip on wafer), and WoW (wafer on wafer) 3-D packaging innovations, with which it plans to offer packaging innovations that compete with Intel's various new 3D chip packaging technologies on the anvil.

TSMC, Taiwan's flagship manufacturer of silicon, has seen a substantial increase in demand for Chip-on-Wafer-on-Substrate (CoWoS) packaging technology, according to the report from DigiTimes. CoWoS is a multi-chip packaging technology that gives an option to build silicon like LEGO, allowing for dies to be placed side by side on interposer that is providing high interconnect density and performance. You can see more about CoWoS in detail here. Some of the examples of CoWoS are NVIDIA's P100 and V100 dies that integrate logic (computing elements), and memory (in the form of HBM) on a single die.

Recently, TSMC updated its CoWoS technology, where this new second-generation parts could scale far larger than the first-generation implementation - up to 1700 squared millimeters of die space, allowing for some very creative solutions to be implemented. This may be the reason that the demand in Q2 has risen so substantially and that TSMC's production lines are now running at full capacity, trying to meet the demand for this packaging technology.