Rambus Inc. (NASDAQ: RMBS), a premier chip and silicon IP provider making data faster and safer, today announced the availability of its new family of state-of-the-art DDR5 server Power Management ICs (PMICs), including an industry-leading extreme current device for high-performance applications. With this new family of server PMICs, Rambus offers module manufacturers a complete DDR5 RDIMM memory interface chipset supporting a broad range of data center use cases.

"Advanced data center workloads like generative AI require the highest bandwidth and capacity server RDIMMs tailored to meet ever-increasing memory needs of a growing data pipeline," said Sean Fan, chief operating officer at Rambus. "With the addition of this new family of server PMICs, we expand our foundational technology and offer customers a comprehensive memory interface chipset that supports multiple DDR5 server platform generations."

Samsung Electronics, a world leader in advanced semiconductor technology, unveiled the expansion of its Compute Express Link (CXL) memory module portfolio and showcased its latest HBM3E technology, reinforcing leadership in high-performance and high-capacity solutions for AI applications.

In a keynote address to a packed crowd at Santa Clara's Computer History Museum, Jin-Hyeok Choi, Corporate Executive Vice President, Device Solutions Research America - Memory at Samsung Electronics, along with SangJoon Hwang, Corporate Executive Vice President, Head of DRAM Product and Technology at Samsung Electronics, took the stage to introduce new memory solutions and discuss how Samsung is leading HBM and CXL innovations in the AI era. Joining Samsung on stage was Paul Turner, Vice President, Product Team, VCF Division at VMware by Broadcom and Gunnar Hellekson, Vice President and General Manager at Red Hat to discuss how their software solutions combined with Samsung's hardware technology is pushing the boundaries of memory innovation.

SMART Modular Technologies, Inc. ("SMART"), a division of SGH (Nasdaq: SGH) and a global leader in memory solutions, solid-state drives, and hybrid storage products, introduces its ultra-high reliability memory solution, Zefr ZDIMM memory modules. ZDIMM modules are ideally suited for data centers, hyperscalers, high performance computing (HPC) platforms and other environments that run large memory applications that demand maximum availability of the compute platform. Memory reliability is a critical factor in data centers due to the high costs associated with downtime. ZDIMM modules are offered in both DDR4-3200 and DDR5-5600 form factors and are available in mainstream densities.

ZDIMM modules employ SMART's proprietary Zefr screening process that delivers the highest levels of uptime and reliability, typically performing 90% better than industry standard memory modules. ZDIMM modules undergo a screening process that replicates real-world conditions which ensures the robustness and resilience of ZDIMM modules in the most demanding computing scenarios.

A Crucial "CT12G56C46S5" Non-ECC Small Outline Dual In-line Memory Module (SODIMM) is available to pre-order from Amazon UK—the 12 GB capacity product was spotted by everyone's favorite PC hardware sleuth;—momomo_us. March 31 appears to be the official shipping out date—current pricing is £44.99 ($57.50). Additionally, customers have the option to reserve a related 24 GB Kit (2x 12 GB) kit (CT2K12G56C46S5), priced at £87.99 (~$112.36). According to product descriptions, Crucial's upcoming laptop 5600 MHz RAM "can downclock if system specification only supports 5200 MHz or 4800 MHz."

"Non-binary modules" DDR5 modules hit retail last year—we have witnessed a slow trickle out of 24 GB and 48 GB capacity sticks, granting unusual memory configurations on compatible AMD and Intel platforms. The CT12G56C46S5 and CT2K12G56C46S5 are supported by "Core 13th Gen and Ryzen 6000 Series laptop CPUs and above." Crucial's latest DDR5 SODIMM could be the first 12 GB capacity model to reach retail, unless a rival manufacturer sneaks out an equivalent item prior to March 31.

In a surprising turn of events, SK Hynix has hinted at the possibility of the Compression Attached Memory Module (CAMM) standard, initially designed for laptops, being introduced to desktop PCs. This revelation came from a comment made by an SK Hynix representative at the CES 2024 in Las Vegas for the Korean tech media ITSubIssub. According to the SK Hynix representative, the first implementation is underway, but there are no specific details. CAMM, an innovative memory standard developed by Dell in 2022, was certified to replace SO-DIMM as the official standard for laptop memory. However, the transition to desktop PCs could significantly disrupt the desktop memory market. The CAMM modules, unlike the vertical DRAM sticks currently in use, are horizontal and are screwed into a socket. This design change would necessitate a complete overhaul of the desktop motherboard layout.

The thin, flat design of the CAMM modules could also limit the number that can be installed on an ATX board. However, the desktop version of the standard CAMM2 was announced by JEDEC just a month ago. It is designed for DDR5 memory, but it is expected to become mainstream with the introduction of DDR6 around 2025. While CAMM allows for higher speeds and densities for mobile memory, its advantages for desktops over traditional memory sticks are yet to be fully understood. Although low-power CAMM modules could offer energy savings, this is typically more relevant for mobile devices than desktops. As we move towards DDR6 and DDR7, more information about CAMM for desktops will be needed to understand its potential benefits. JEDEC's official words on the new standard indicate that "DDR5 CAMM2s are intended for performance notebooks and mainstream desktops, while LPDDR5/5X CAMM2s target a broader range of notebooks and certain server market segments." So, we can expect to see CAMM2 in both desktops and some server applications.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD318: Compression Attached Memory Module (CAMM2) Common Standard. This groundbreaking standard defines the electrical and mechanical requirements for both Double Data Rate, Synchronous DRAM Compression-Attached Memory Modules (DDR5 SDRAM CAMM2s) and Low Power Double Data Rate, Synchronous DRAM Compression-Attached Memory Modules (LPDDR5/5X SDRAM CAMM2s) in a single, comprehensive document. JESD318 CAMM2 is available for download from the JEDEC website.

DDR5 and LPDDR5/5X CAMM2s cater to distinct use cases. DDR5 CAMM2s are intended for performance notebooks and mainstream desktops, while LPDDR5/5X CAMM2s target a broader range of notebooks and certain server market segments.

Lexar, a leading global brand of flash memory solutions, is excited to announce THOR OC DDR5 Desktop Memory. Featuring a complete redesign that pays homage to Thor's hammer, this memory also boasts a durable, solid aluminium heatsink that more than stands up to the challenges of overclocking by providing superior heat dissipation. Lexar THOR OC DDR5 Desktop Memory delivers up to 6000MT/s with timing as low as CL32 for a truly next-gen experience. It features a low-profile form factor that is perfect for compact PC builds. It also supports Intel XMP 3.0 and AMD EXPO overclocking and is compatible with most DDR5 motherboards.

Lexar THOR OC DDR5 Desktop Memory's on-die Error Correction Code (ECC) offers improved stability and reliability while its on-board Power Management IC (PMIC) enhances power efficiency. Another option for PC users is THOR OC DDR4 Desktop Memory. It offers 3200MT/s performance with timing of CL16 and is designed for PC enthusiasts and extreme gamers. It has an aluminium heat spreader with a winged design to keep systems running cool and is compatible with INTEL XMP 2.0 and AMD Ryzen.

Jung-Bae Lee, President and Head of Memory Business of Samsung Electronics, the world's largest NAND memory supplier, has noted in the blog post that Samsung plans to develop its 9th Generation V-NAND memory with over 300 layers, aiming for mass production in 2024. Samsung's V-NAND uses a double-stack structure and is expected to have more active layers than its competitors' 3D NAND memory, such as SK Hynix's forthcoming 321-layer memory. The increase in layers allows Samsung to enhance storage density and performance in its future 3D NAND devices, focusing on input/output (I/O) speed. While the specific performance details of Samsung's 9th Generation V-NAND remain undisclosed, the memory is expected to be used in next-generation PCIe SSDs with the PCIe 5.0 standard.

Jung-Bae Lee has noted: "New structural and material innovations will be critical in the upcoming era of sub-10-nanometer (nm) DRAM and 1,000-layer vertical V-NAND. As such, we are developing 3D stacked structures and new materials for DRAM while increasing layer count, decreasing height, and minimizing cell interference for V-NAND." The 9th installment of V-NAND, scheduled for 2024, is utilizing 11 nm-class DRAM. Additionally, the blog post reassures the commitment to CXL Memory Modules (CMM), which will enable the composable infrastructure of next-generation systems, especially with high-capacity SSDs powered by V-NAND.

Global memory brand Team Group announced the launch of its updated ELITE memory modules with enhanced frequencies today: the ELITE PLUS DDR5 and ELITE DDR5 Desktop Memory 6400 MHz (1.1 V CL52-52-52-103). Both comply with JEDEC memory standards and fulfill the needs of demanding applications and high-performance computing.

In response to the growing demand for high-speed computing and digital technology, Team Group has introduced the upgraded ELITE PLUS DDR5 6400 MHz and ELITE DDR5 6400 MHz memory modules, which boast higher frequencies and low power consumption. The updated specs of the ELITE memory fully meet the needs of learning, entertainment, and more on desktop computers. With the modules' low operating voltage of 1.1 V, power consumption is significantly reduced, and the computer's lifespan is extended. In addition, DDR5's Same-Bank Refresh feature and optimized IC structure can process the double amount of data simultaneously compared to DDR4, which enables computers to operate more smoothly while multi-tasking and significantly improves operating efficiency.

GELID Solutions has introduced its brand new IceROCK DDR Cooling Kit to the world. This aftermarket heatsink radiator is constructed from high-grade aluminium and available to order in two finishes - black or silver. These kits offers primary support for DDR5 memory modules, but Gelid has made sure to provide full compatibility for older DDR3 and DDR4 RAM sticks. The optimized heatsink is light in weight and easy to install, and offers professional level cooling - ideal for overclocking and boosting enthusiasts.

The minimalist and sleek design only weighs in at 60 g, and the pure and high-grade aluminium heatsink guarantees excellent heat conductivity. The kit can be installed onto a wide variety of memory module shapes - be it low or high profile, plus single or double sided RAM arrangements.

AMD is working on the AGESA 1.0.0.7 BIOS update that should resolve issues and bring support for 24 GB and 48 GB DDR5 memory modules and kits on the AM5 platform. The latest report, coming from Twitter, suggest that AMD is working hard on the AGESA release, so motherboard manufacturers could push BIOS updates early next month or in May. While Intel's 600- and 700-series motherboards are happily working with 24 GB and 48 GB DDR5 memory modules and kits, allowing users to use up to 192 GB (4x48 GB) of memory in their systems, it comes as a surprise that AMD did not release an official, or even a BETA BIOS update for such modules.

There were already reports that such 24 GB and 48 GB DDR5 modules are having issues on AMD's AM5 platform and while the BIOS can detect the memory, it simply will not boot into Windows. This latest report originally comes from hardware leaker chi11eddog over at Twitter, and suggests that AMD and its motherboard partners are well aware of the issue and the AGESA BIOS firmware v1.0.0.7 should bring full support for so-called "non-binary" 24 GB and 48 GB DDR5 memory modules.

SK hynix Inc. announced today that it has developed working samples of DDR5 Multiplexer Combined Ranks (MCR) Dual In-line Memory Module, the world's fastest server DRAM product. The new product has been confirmed to operate at the data rate of minimum 8 Gbps, and at least 80% faster than 4.8 Gbps of the existing DDR5 products. MCR DIMM is an achievement coming from out-of-the-box thinking with an aim to improve the operation speed of DDR5. Challenging the prevailing concept that the operation speed of DDR5 relies on that of DRAM chip itself, engineers sought to find a way to improve the speed of modules instead of chips for development of the latest product.

SK hynix designed the product in a way that enables simultaneous operation of two ranks by utilizing the data buffer installed onto the MCR DIMM based on Intel's MCR technology. By enabling simultaneous operation of two ranks, MCR DIMM allows transmission of 128 bytes of data to CPU at once, compared with 64 bytes fetched generally in conventional DRAM module. An increase in the amount of data sent to the CPU each time supports the data transfer rate of minimum 8 Gbps, twice as fast as a single DRAM.

SMART Modular Technologies, Inc. ("SMART"), a division of SGH and a global leader in memory solutions, solid-state drives and hybrid storage products today announced the addition of new DDR5 16 GB and 32 GB Very Low Profile Error-Correction Code Unbuffered Dual In-Line Memory Modules (VLP ECC UDIMM) to its lineup of blade memory VLP module products.

SMART's new DuraMemory DDR5 VLP ECC UDIMMs are designed for 1U blade servers and blade enclosure systems used in networking, telecom, compute and storage applications that are optimized to minimize space and power. DDR5 VLP ECC UDIMMs are designed to meet height, density, power, and performance specifications needed to enable the next generation of memory applications.

SMART Modular Technologies, Inc. a global leader in memory solutions, solid-state drives, and hybrid storage products announces its new Compute Express Link (CXL) Memory Module, the XMM CXL memory module. SMART's new DDR5 XMM CXL modules helps boost server and data center performance by enabling cache coherent memory to be added behind the CXL interface, further expanding big data processing capabilities beyond the current 8-channel/12-channel limitations of most servers.

The industry adoption of composable serial-attached memory architecture enables a whole new era for the memory module industry. Serial-attached memory adds capacity and bandwidth capabilities beyond main memory DIMM modules. Servers with XMM CXL modules can be dynamically configured for different applications and workloads without being shut down. Memory can be shared across nodes to meet throughput and latency requirements.

Rambus Inc., a premier chip and silicon IP provider making data faster and safer, today announced the expansion of its DDR5 memory interface chip portfolio with the addition of the Rambus SPD (Serial Presence Detect) Hub and Temperature Sensor, complementing the industry-leading Rambus Registering Clock Driver (RCD). DDR5 achieves greater memory bandwidth and capacity by employing a new module architecture with an expanded chipset. The SPD Hub and Temperature Sensors improve DDR5 Dual Inline Memory Module (DIMM) system management and thermal control to deliver higher performance within the desired power envelope for servers, desktops and laptops.

"The new performance levels of DDR5 memory place an increased premium on signal integrity and thermal management for server and client DIMMs," said Sean Fan, chief operating officer at Rambus. "With over 30 years of memory subsystem design experience, Rambus is ideally positioned to deliver DDR5 chipset solutions which enable breakthrough bandwidth and capacity for advanced computing systems."

In response to the evolution of industrial DDR5 memory platform specifications, global memory brand TEAMGROUP has utilized its outstanding R&D capabilities to develop the first industrial U-DIMM, SO-DIMM, ECC-DIMM, and R-DIMM DDR5 memory modules at 5,600MHz clock speeds and run at 1.1V. They are expected to meet the diverse needs of next-generation platforms, Intel Raptor Lake and AMD Raphael-X, with high-performance specifications in line with JEDEC standards, accelerating the development of high-end industrial applications.

TEAMGROUP has been making strides in the industrial market for years and is focused on DDR5 memory applications. The company previously developed a complete range of DDR5 4,800 MHz modules, and now thanks to its industry-leading R&D, TEAMGROUP has successfully increased the frequencies of its DDR5 product line to 5,600 MHz. For added security in industrial applications, an SPD Write Protection feature was also adopted, which prevents SPD parameter changes caused by abnormal interference. With these enhancements, the risk of shutdown is greatly reduced and the memory is able to operate with substantially improved performance and stability.

To meet the demand for all types of multi-tasking, high-clock-speed experiences, and high-performance computing as well as to provide users with a full range of DDR5 upgrade options, TEAMGROUP, a global memory leader, has announced the release of its newly-updated ELITE SO-DIMM DDR5 and ELITE U-DIMM DDR5 5600 MHz high-speed memory modules. Both models will be available on Amazon in North America in early July, 2022. The high clock speed allows for higher-performance DDR5 memory for both desktop and laptop computers, enhancing user productivity and improving overall operational efficiency and storage performance. Consumers worldwide can also enjoy a more stable and efficient experience with lower power consumption provided by TEAMGROUP's ELITE memory.

In response to the growing demand for high-speed computing and digital technology, TEAMGROUP has introduced the upgraded ELITE SO-DIMM DDR5 5600 MHz and ELITE U-DIMM DDR5 5600 MHz memory modules, which boast higher frequencies and low power consumption. The updated specs of the ELITE memory fully meet the needs of business, learning, and entertainment applications on desktop and laptop computers. With a low operating voltage of 1.1 V, the power consumption of the memory is significantly reduced, extending the life of computers it is installed on. In addition, DDR5's Same-Bank Refresh feature and optimized IC structure can process double the amount of data simultaneously compared to DDR4, which enables computers to operate more smoothly while multi-tasking and significantly improves operating efficiency.

Last week the first details of Dell's CAMM (Compression Attached Memory Module) made an early appearance courtesy of a product leak, but now official details have appeared and the good news is that Dell is saying it won't be a proprietary solution. The Compression Connector looks unlike anything used by consumer computers today and Dell is said to be hoping that it'll be the next industry standard for memory modules, according to PCWorld. The interposer mentioned in the previous news article is also mentioned and allows for a pair of DDR5 SO-DIMMs to be used, albeit with a much taller Z-height.

Dell is apparently planning on getting its CAMM approved by the JEDEC, which is the standards organisation when it comes to memory. However, even if the CAMM format is accepted as a JEDEC standard, Dell holds patents and is likely to charge some kind of royalty fees to interested parties. That said, if it becomes a JEDEC standard, Dell has to follow RAND or Reasonable and Non-Discretionary terms, so the royalty fees would have to be reasonable for JEDEC to agree on making CAMM a standard. The main benefit of Dell's CAMM is that the memory traces end up being shorter and more direct, since the CAMM has a single-sided interface, whereas SO-DIMMs are interfaced on both sides, just like standard DIMMs. This would allow for higher speed memory interfaces, without the need of using something like signal re-drivers or re-timers.

A leak with details about upcoming Dell notebooks has revealed that Dell's upcoming notebooks with DDR5 memory will feature a custom memory module that Dell calls CAMM, or Compression Attached Memory Module. The CAMM can support up to 128 GB RAM according to the leak and initial modules will support memory speeds of 4800 MHz. It's unclear if notebooks with CAMM support will have soldered down memory as well, but what is clear is that Dell is not looking at using traditional SO-DIMM type modules.

The first notebooks from Dell to feature the new module appears to be the Precision 7-series, which will also feature an Intel 55 W Alder Lake-HX series CPU, a choice of an NVIDIA RTX A5000 GPU or Intel Arc DG2 based graphics with a 90 W TDP, as well as up to 12 TB of NVMe storage over PCIe 4.0. Apparently Dell has developed what it calls DGFF or Dell Graphics Form Factor for these laptops, which suggests that they'll feature some kind of modular graphics solution. Considering that at least some models in Precision 7-series will sport 16-inch displays, there should be plenty of space for a GPU module, although it'll be interesting to see exactly what Dell is bringing to the table that's new here.

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SMART Modular Technologies, Inc., a division of SGH and a global leader in memory solutions, solid-state drives, and hybrid storage products announces its new DDR5 32 GB Very Low Profile Registered Dual In-Line Memory Module (VLP RDIMM). SMART's new DuraMemory DDR5 32 GB VLP RDIMM is the industry's first DDR5 VLP RDIMM form factor.

The 32 GB VLP RDIMM addresses applications with space constraints, such as embedded 1U blade compute and storage, enterprise networking, telecom, and industrial single-board computers (SBCs). The space savings also equates to improved heat dissipation and energy savings, reducing business costs. The DDR5 32 GB VLP RDIMM is the newest addition to SMART's broad portfolio of VLP and ULP (Ultra Low Profile) modules that are suitable for all types of dense computing, storage, networking and telecom applications. For ruggedized and harsh operating conditions, SMART also offers retention clips to secure the socket latches in place, and industrial grade temperature operation of -40°C to +85°C.

ADATA Technology, a manufacturer of high-performance DRAM modules, NAND Flash products, mobile accessories, gaming products, electric power trains, and industrial solutions today announces the ADATA DDR5-4800, a next-generation DDR5 memory module that is capable of reaching frequencies of up to 4800MT/s and comes with up to 32 GB of capacity. In addition, ADATA has worked with six major motherboard brands, including AORUS, ASROCK, ASUS, GIGABYTE, MSI and ROG to ensure optimal performance and compatibility across a wide range of motherboards.

"Through our strong R&D capabilities and close partnerships with the world's leading motherboard makers, we are committed to offering memory modules with next-generation performance, higher capacities, and enhanced stability," said Nick Dai, Senior Manager of DRAM Products at ADATA. "In the coming months, we will continue to launch a diverse array of DDR5 products to meet the different needs of creators, gamers, and other users."

The latest IRDM modules are designed for gamers and professionals to provide not only an aesthetic experience, but also high performance. Each module is equipped with 8 LEDs and is compatible with RGB lighting control software from leading motherboard manufacturers such as ASUS, MSI, GIGABYTE, and ASRock. This ensures that the lighting effects can be programmed in many different ways, resulting in the ability to synchronize with other RGB devices like the motherboard, computer case, cooling system, keyboard, headphones, or computer mouse. Initially, the modules will be available for sale in the currently most popular kit of 2x 8 GB 3600 MHz, but the manufacturer announces that products with other specifications will soon be added to the series.

IRDM RGB DDR4 modules are built from carefully selected components and Micron memory chips. The 3600 MHz frequency at 18-22-22 timings ensures fast and stable operation of the modules, while the black heatsink built from a combination of aluminium, silicon, and magnesium perfectly dissipates heat, even during intensive use. "We are handing our customers a product that has been long-awaited and desired on the market. We are convinced that the parameters of the new IRDM memory will be appreciated by the most demanding users, especially gamers, case modders, and enthusiasts of computer sets with RGB lighting. We wanted to provide the best product in terms of both technical characteristics and a timeless design", says Wiesław Wilk, the CEO of Wilk Elektronik SA.

Corsair on Wednesday tweeted the first picture of its production Vengeance DDR5 memory modules. The picture reveals a simple, minimalist design, with a sheet-metal heatspreader design with some printed graphic, and the new Vengeance logo. Unlike the Vengeance DDR4 generation, there don't appear to be false "finnage" toward the top of the module. Since DDR5 will be coexisting with DDR4 to at least the next couple of years as Intel is getting its motherboard partners to come out with a substantive lineup of LGA1700 motherboards with DDR4 memory slots, Corsair made sure to mention "DDR5" right on the module. Corsair also revealed that it is developing the first Dominator-branded DDR5 memory, which will possibly come out with the first Intel 12th Gen Core processors.

At this year's Hot chips 33 conference, Samsung has presented its works on the upcoming DDR5 memory standard. The company has managed to achieve a lot of new developments, as the newer standard pairs with new technologies to deliver higher speeds and better capacity. The Korean company designed its DDR5 modules as 8-high (8H) stacked TSV (through silicon via) dies. In the previous DDR4 implementations, Samsung used 4-high (4H) stacked TSV dies, which are actually thicker than the latest 8-high implementations. To achieve the new thin design, Samsung has used thin wafer handling techniques, which resulted in a 40% reduction in gab between stacked dies. The new 8H DDR5 modules are only 1.0 mm thick, compared to the 1.2 mm of the older 4H modules.

When it comes to performance, Samsung expects the new DDR5 modules to deliver big. Running at 7.2 Gbps speeds, the Samsung-made RDIMM/LRDIMM modules can reach up to 512 GB in capacity. This is, of course, limited to the server/enterprise market. Regular consumers/PC users can expect to have UDIMMs with up to 64 GB of capacity. The aforementioned 7.2 Gbps speed is achieved at the specified 1.1 Volts of power, meaning that Samsung's implementation is very efficient. According to some estimations made by the company, the DDR5 crossover for the mainstream market is not expected before 2023/2024, meaning that there is still a lot of time for memory makers to refine their DDR5 products.