JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of the next version of its High Bandwidth Memory (HBM) DRAM standard: JESD238 HBM3, available for download from the JEDEC website. HBM3 is an innovative approach to raising the data processing rate used in applications where higher bandwidth, lower power consumption and capacity per area are essential to a solution's market success, including graphics processing and high-performance computing and servers.

NAND Flash prices for 1Q22 are expected to decline by 8-13% QoQ, compared to TrendForce's previous forecast of 10-15% QoQ, primarily due to PC OEMs' increased orders for PCIe 3.0 products and the impact of the lockdown in Xi'an on PC OEMs' price negotiation approaches. To mitigate potential risks in logistics, NAND Flash buyers are now more willing to accept a narrower decline in contract prices in order to obtain their products sooner. However, as the Xi'an lockdown has not noticeably affected the local fabs' manufacturing operations, the movement of NAND Flash contract prices going forward will likely remain relatively unaffected by the lockdown.

In addition, TrendForce finds that the daily number of new COVID-19 cases in Xi'an has recently undergone a noticeable drop, and the local government has also announced that that the emergency level has been downgraded. As such, Samsung's and Micron's local production facilities are returning to normal with respect to workforce and operational capacity. Samsung's local production base manufactures NAND Flash products, whereas Micron's local production base is responsible for the testing and packaging of DRAM chips as well as the assembly of DRAM modules. The impacts of the lockdown mainly relate to delays in the deliveries of memory products to customers. On the other hand, the event has not caused a tangible loss in memory production.

Despite having sold its fab in Lehi, Utah to TI back in October last year, it looks like Micron is ready to build a new, most likely more advanced fab and rumours are now circulating that it might end up in Austin, Texas. Micron currently has two fabs in Virginia and one in Idaho, plus four in Singapore, four in Taiwan, one in the PRC and one in Japan. It should be noted that Micron used to have a fab outside of Dallas, so Texas isn't entirely unfamiliar ground for Micron. Initially Micron is said to have been eyeing North Carolina for its new fab, but that apparently fell through recently.

Micron announced last year that it's looking to invest some US$150 million in expanding and improving upon its current fabs, plus potentially building additional ones. In addition to Texas, California and Arizona are apparently still in the running, although it's unclear when Micron will make a final decision. The fab will obviously be producing either DRAM or flash memory, but it's not clear what markets Micron is looking to expand its production in, but DRAM seems more likely based on current market conditions. The company is said to be looking for a location that has not only the suitable staff required, but is also looking for the right cost and reliability when it comes to utilities, as well as regulatory friendliness.

A disturbing trend among entry-level M.2 NVMe SSDs is a complete disregard from manufacturers for consistency in the brands and types of the various key components of the drives. The companies simply advertise a certain set of performance and endurance numbers, which serve as ends to reach by whatever means (of controller or NAND flash combos). This was recently illustrated with the Kingston NV1, which presents an extreme case of "hardware lottery." You can get either a SMI or Phison controller, and either a TLC or QLC NAND flash (combinations thereof).

Cutting through all this, ADATA is making a reassuring guarantee with regards to its recently announced entry-level NVMe product, the XPG Atom 50. In an exclusive comment to TechPowerUp, the company said that all XPG Atom 50 drives in the market will come with a consistent combination of controller and NAND flash. The drive combines an Innogrit IG5220 RainierQX controller with Micron "B47R" 176-layer 3D TLC NAND flash chips, a combo ADATA guarantees it will never break. We recently reviewed the 1 TB variant of this drive, and found it to offer excellent performance leveraging PCIe Gen4, at a price you'd typically find PCIe Gen3 drives at.

Micron Technology, Inc., today announced it has begun volume shipments of the world's first 176-layer QLC NAND SSD. Built with the most advanced NAND architecture, Micron's 176-layer QLC NAND delivers the industry's leading storage density and optimized performance for a broad range of data-rich applications. Designed for use cases spanning client and data center environments, Micron's transformative new NAND technology is now available with the introduction of the Micron 2400 SSD, the world's first 176-layer PCIe Gen4 QLC SSD for client applications. The new 176-layer QLC NAND will also be incorporated into select Micron Crucial consumer SSDs, and available as a component for system designers.

Micron's groundbreaking 176-layer QLC NAND provides a layer count and density unprecedented in QLC NAND flash and follows Micron's delivery of the industry's first 176-layer TLC NAND. Additionally, Micron's 176-layer QLC NAND enables 33% higher I/O speed and 24% lower read latency than Micron's prior generation solution. Its replacement-gate architecture is the only mass production QLC flash storage that combines charge trap with a CMOS-under-array design. These improvements are driving adoption of QLC SSDs in the client PC market, which is expected to triple QLC adoption by 2023, exceeding 35%, and reaching nearly 80% bit share in 2025.

During its quarterly earnings call, Micron confirmed that the lack of DDR5 memory in retail is not due to a shortage of DDR5 memory ICs, but rather due to a shortage of PMIC and VRM components. Micron said that "demand for DDR5 products is significantly exceeding supply due to non-memory component shortages impacting memory suppliers' ability to build DDR5 modules."

It would appear that demand ended up being higher than expected, due to the popularity of Intel's Alder Lake CPUs, with the DRAM module makers not having prepared enough stock of the new components that are required to make DDR5 DIMMs, which has resulted in the current lack of DDR5 modules in retail. Micron is working on its end to resolve this issue and has entered what it calls "strategic agreements to secure supply of certain components" and is expecting supply of said components to improve slowly in 2022. It seems like some of these components are also related to other products made by Micron, such as SSDs.

Micron Technology, Inc. (Nasdaq: MU) today announced results for its first quarter of fiscal 2022, which ended Dec. 2, 2021. "Micron delivered solid fiscal first quarter results led by strong product portfolio momentum," said Micron Technology President and CEO Sanjay Mehrotra. "We are now shipping our industry-leading DRAM and NAND technologies across major end markets, and we delivered new solutions to data center, client, mobile, graphics and automotive customers. As powerful secular trends including 5G, AI, and EV adoption fuel demand growth, our technology leadership and world-class execution position us to create significant shareholder value in fiscal 2022 and beyond."

Demand for NAND Flash products will undergo a noticeable and cyclical downward correction in 1Q22 as major smartphone brands wind down their procurement activities for the peak season and ODMs prepare for the New Year holidays, according to TrendForce's latest investigations. As such, the NAND Flash market will remain in an oversupply situation, with prices continuing to undergo downward corrections accordingly. However, PC OEMs have been reinstating certain orders for client SSDs since early November in response to improvements in the supply of upstream semiconductor materials. By fulfilling these orders, suppliers are able to keep their inventory level relatively low, meaning they are not under as much pressure as previously expected to reduce inventory by lowering prices. Taking these factors into account, TrendForce expects NAND Flash ASP to undergo a 10-15% QoQ decline in 1Q22, during which NAND Flash prices will experience the most noticeable declines compared to the other quarters in 2022.

Regarding the price trend of NAND Flash products across the whole 2021, TrendForce further indicates that suppliers have actively transitioned their output to higher-layer technologies, resulting in a bit supply growth that noticeably outpaces demand, though the tight supply of components such as controller ICs and PMICs has constrained the production of NAND Flash end-products. Hence, the decline in contract prices of NAND Flash products has not been as severe as previously expected. Moving ahead to 2022, however, the supply of relevant components is expected to gradually improve, so the market for various NAND Flash products will also likely shift towards a noticeable oversupply. As a result, prices of NAND Flash products will steadily decline before the arrival of the peak season in 3Q22.

Micron Technology, one of the world's largest semiconductor manufacturers and the only U.S.-based manufacturer of memory, today announced plans for its new memory design center in Midtown Atlanta, expanding the company's reach into the Southeast. The new site, which will open its doors for business in January 2022, enables Micron to increase its access to Atlanta's rich pool of technical talent to further advance its memory design and engineering leadership, while also driving a positive impact in the community. Micron aims to build strong partnerships with many institutions in the region including Emory University, Georgia Tech, Morehouse College, Spelman College and University of Georgia.

Headquartered in Boise, Idaho, Micron maintains U.S. offices in California, Colorado, Minnesota, Texas and Virginia and has a global manufacturing and research and development (R&D) network that spans 17 countries. Memory is at the leading edge of semiconductor manufacturing, requiring production of advanced technologies that are pushing the laws of physics. R&D investments in the field are critical for advancing DRAM innovation. Micron's Atlanta Design Center expansion will create up to 500 jobs across various STEM disciplines including computer hardware and electrical and electronic engineering.

NVIDIA's upcoming flagship graphics card, the GeForce RTX 3090 Ti (also known as RTX 3090 SUPER in some rumor circles); could feature the company's fastest memory solution for GeForce, according to a Uniko's Hardware report. The card maxes out not just the 384-bit bus width of the "GA102" silicon, but also uses Micron-sourced "MT61K512M32KPA-21U" GDDR6X memory chips, which are rated for 21 Gbps date-rates. This results in a roughly 7.7% increase in memory bandwidth over the RTX 3090, with a whopping 1008 GB/s on tap. The title of the highest memory bandwidth on a client-segment graphics card would still go to the Radeon VII, which uses 4096-bit HBM2 to achieve 1024 GB/s. The RTX 3090 Ti also maxes out the "GA102" silicon, by enabling all 84 streaming multiprocessors (SM).

The growth of the NAND Flash market in 3Q21 was primarily driven by strong demand from the data center and smartphone industries, according to TrendForce's latest investigations. More specifically, NAND Flash suppliers' hyperscaler and enterprise clients kept up their procurement activities that began in 2Q21 in order to deploy products based on new processor platforms. Major smartphone brands, on the other hand, likewise expanded their NAND Flash procurement activities during the quarter as they prepared to release their new flagship models. As such, clients in both server and smartphone industries made significant contributions to the revenue growth of the NAND Flash industry for 3Q21. At the same time, however, suppliers also warned that orders from PC OEMs began showing signs of decline. On the whole, the industry's quarterly total NAND Flash bit shipment increased by nearly 11% QoQ for 3Q21, and the overall NAND Flash ASP rose by nearly 4% QoQ for the same quarter. Thanks to rising prices and expanding shipments, the quarterly total NAND Flash revenue increased by 15% QoQ to a new record high of US$18.8 billion in 3Q21.

As the global vaccination rate rose, and border restrictions in Europe and North America eased, social activities also began to enter a period of recovery, with the consumer electronics market seemingly ready for the arrival of the traditional peak season in 2H21, according to TrendForce's latest investigations. At the same time, however, the global supply chain was affected by delays in maritime transport, skyrocketing shipping costs, and component shortages, in addition to already-prohibitive price hikes for certain components in 1H21. Given the parallel rise in both material and manufacturing costs, the market for end products has not undergone the expected cyclical upturn in 2H21. Even so, the overall demand for and shipment of smartphones, notebook computers, and monitors experienced QoQ increases in 3Q21, thereby driving up businesses for major OSAT (outsourced semiconductor assembly and test) companies. For 3Q21, the revenues of the top 10 OSAT companies reached US$8.89 billion, a 31.6% YoY increase.

Micron Technology, Inc. announced today that MediaTek Inc. has validated Micron's low-power double data rate 5X (LPDDR5X) DRAM for MediaTek's new Dimensity 9000 5G flagship chipset for smartphones. Micron is the first semiconductor company to sample and validate this fastest, most advanced mobile memory in the industry and has shipped the first batch of samples of LPDDR5X built on its first-to-market 1α (1-alpha) node. Designed for high-end and flagship smartphones, Micron's LPDDR5X allows the smartphone ecosystem to unlock the next wave of data-intensive applications powered by artificial intelligence (AI) and 5G innovation.

The market delivery and validation of Micron's industry-leading 1α-based LPDDR5X solidifies its product innovation and leadership in the mobile ecosystem, following industry-first launches for LPDDR5, 1α-based LPDDR4X, 176-layer NAND-based UFS 3.1 and uMCP5 solutions. This most recent milestone follows quickly on the heels of JEDEC's July release of the LPDDR5X extension to LPDDR5, created to offer higher bandwidth and memory speed for enhanced 5G communication and performance while still conserving power. Micron has validated samples supporting data rates up to 7.5 Gb/s, with samples supporting data rates up to 8.533 Gb/s to follow. Peak LPDDR5X speeds of 8.533 Gb/s deliver up to 33% faster performance than previous-generation LPDDR5.

"Innovating cutting-edge smartphone experiences requires memory technology built to address the massive bandwidth demands of the mobile market," said Raj Talluri, senior vice president and general manager of Micron's Mobile Business Unit. "Our collaboration with MediaTek to validate the world's most advanced mobile memory empowers the ecosystem to deliver the next wave of rich mobile features enhanced by 5G and AI."

Despite the forecasted 18.6% YoY growth in total DRAM bit supply next year, the global DRAM market is still expected to shift from a shortage situation to an oversupply, according to TrendForce's latest investigations. This shift can primarily be attributed to the fact that, not only are most buyers now carrying a relatively high level of DRAM inventory, but DRAM bit demand is also expected to increase by only 17.1% YoY in 2022. On the price front, the oversupply situation will result in a drop in DRAM ASP in 2022 but not a major decline in annual DRAM revenue, thanks to the oligopolistic nature of the DRAM industry. Annual DRAM revenue for 2022 is expected to reach US$91.54 billion, which represents a slight YoY increase of 0.3%.

Based on an analysis of DRAM sufficiency ratio (which refers to the surplus of supply in comparison with demand) for each quarter in 2022, TrendForce forecasts a 15% YoY decrease in DRAM ASP for 2022, with prices undergoing the more noticeable declines during the first half of the year. Heading into 2H22, however, owing to the rise in DDR5 penetration rate, as well as the arrival of peak seasonal demand, the decline in DRAM ASP will likely narrow. TrendForce does not rule out the possibility that DRAM ASP may even hold flat or undergo an increase in 2H22.

Micron, today announced that its high-performance 16Gb / 16 Gbps GDDR6 memory solution is now available with AMD Radeon RX 6000 Series graphics cards built on the AMD RDNA 2 gaming architecture. Using Micron's advanced 1z process technology, this latest version of GDDR6 enables up to 512 GB/s system performance for demanding applications like gaming and graphics. Today's announcement continues Micron's rich history of innovation and collaboration with industry leaders to deliver breakthrough performance that enables the most advanced gaming solutions.

As graphics and gaming applications become more demanding, so do the requirements for high bandwidth memory and system performance. Modern gamers expect high-resolution, immersive experiences, and GDDR6 delivers with its support of fast frame rates. The result is excellent performance and speed that minimize lag time and provide gamers with lifelike effects.

Micron, today announced the immediate availability of Micron Crucial DDR5 desktop PC memory products that deliver up to 50% faster data transfer speeds over previous-generation DDR4 memory, providing mainstream PC users with enthusiast-level performance. Whether a PC is used for business, learning, creativity, interactive entertainment or personal use, the computing experience is defined by performance, flexibility and efficiency. Micron's DDR5 memory technology advancements offer higher bandwidth per core, nearly doubling the effective memory bandwidth to provide multi-core CPUs with the data they need for multi-tasking and other demanding PC applications.

DDR5 allows for better power efficiency, decreasing operating voltage to 1.1 volts. Plus, its unique features enable future chip density to grow from today's 16 GB up to 24 GB, 32 GB and beyond, quadrupling the module density of DDR5 over DDR4 DRAM. This provides headroom and future scalability for DDR5-enabled systems. Improved bus efficiency results in higher effective bandwidth. By combining higher bandwidth, lower power and higher density, DDR5 enhances performance for emerging PC applications such as 4K and 8K content creation, interactive entertainment, personal and business productivity, and virtual reality experiences. By feeding hungry multi-core CPUs, DDR5 memory also helps make multitasking more efficient without bogging down system performance.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced publication of the JESD79-5A DDR5 SDRAM standard. This update to the JEDEC DDR5 SDRAM standard includes features designed to enhance reliability and performance in a wide range of applications involving client systems and high-performance servers. JESD79-5A is now available for download from the JEDEC website.

Added features designed to meet industry demand for improved system reliability include bounded fault error-correction support, Soft Post-Package Repair (sPPR) undo and lock, Memory Built-In Self-Test Post Package Repair (MBIST and mPPR), Adaptive RFM, and an MR4 extension. JESD79-5A expands the timing definition and transfer speed of DDR5 up to 6400 MT/s for DRAM core timings and 5600 MT/s for IO AC timings to enable the industry to build an ecosystem up to 5600 MT/s. The nomenclature for core timing parameters and their respective definitions has been revamped to closely align with the upcoming JEDEC JESD400-5 DDR5 Serial Presence Detect (SPD) Contents V1.0 standard. The document can be accessed here.

Micron Technology, Inc. (Nasdaq: MU), the only U.S.-based manufacturer of memory and one of the world's largest semiconductor manufacturers, today announced that it intends to invest more than $150 billion globally over the next decade in leading-edge memory manufacturing and research and development (R&D), including potential U.S. fab expansion. Micron's investment will address increasing demand for memory that is essential to all computing.

Memory and storage are a growing portion of the global semiconductor industry, and today represent approximately 30% of the semiconductor market. Secular growth drivers like 5G and AI will expand usage of memory and storage across the data center and the intelligent edge, and in areas like automotive and a diversity of user devices.

DRAM contract prices are likely to exit a bullish period that lasted three quarters and be on the downswing in 4Q21 at a QoQ decline of 3-8%, according to TrendForce's latest investigations. This decline can be attributed to not only the declining procurement activities of DRAM buyers going forward, but also the drop in DRAM spot prices ahead of contract prices. While the buying and selling sides attempt to gain the advantage in future transactions, the DRAM market's movement in 2022 will primarily be determined by suppliers' capacity expansion strategies in conjunction with potential growths in demand. The capacity expansion plans of the three largest DRAM suppliers (Samsung, SK hynix, and Micron) for 2022 are expected to remain conservative, resulting in a 17.9% growth in total DRAM bit supply next year. On the demand side, inventory levels at the moment are relatively high. Hence, DRAM bit demand is expected to grow by 16.3% next year and lag behind bit supply growth. TrendForce therefore forecasts a shift in the DRAM market next year from shortage to surplus.

Synopsys, Inc. today announced the industry's first complete HBM3 IP solution, including controller, PHY, and verification IP for 2.5D multi-die package systems. HBM3 technology helps designers meet essential high-bandwidth and low-power memory requirements for system-on-chip (SoC) designs targeting high-performance computing, AI and graphics applications. Synopsys' DesignWare HBM3 Controller and PHY IP, built on silicon-proven HBM2E IP, leverage Synopsys' interposer expertise to provide a low-risk solution that enables high memory bandwidth at up to 921 GB/s.

The Synopsys verification solution, including Verification IP with built-in coverage and verification plans, off-the-shelf HBM3 memory models for ZeBu emulation, and HAPS prototyping system, accelerates verification from HBM3 IP to SoCs. To accelerate development of HBM3 system designs, Synopsys' 3DIC Compiler multi-die design platform provides a fully integrated architectural exploration, implementation and system-level analysis solution.

Micron Technology, today announced availability of the Micron 7400 SSD with NVMe, delivering industry-leading form factor flexibility, PCIe Gen4 performance, and leading-edge security to meet the storage needs of demanding data center workloads. With this portfolio, Micron is providing the broadest selection of mainstream data center SSDs available. Featuring seven form factors, the Micron 7400 SSD enables the transition to next-generation server architectures. Data centers continue to evolve thanks to the rapid growth of data and proliferation of applications that demand high performance. The need to process, analyze and secure data that provides valuable insights is fueling the modernization of the data center, requiring new levels of storage innovation.

If you're looking at getting your hands on some DDR5 memory for your new Alder Lake build once it launches, a leak of validated RAM has popped up on Twitter, that should give you an idea of what to expect. The list is only a couple of weeks old and it's not what we'd call a long list, as it only covers five companies, out of which three are actual DRAM manufacturers and one is a subsidiary of one of those companies, there are no real surprises here.

All the DDR5 modules tested are rated at 4800 MHz and are either 8, 16 or 32 GB in size, with all modules using 16 Gbit chips. All modules were tested with timings of 40-39-39 at 1.1 V. Kingston is the only outlier here, since they're not a DRAM manufacturer, unlike SK hynix, Samsung and Micron/Crucial. Intel is listing all the modules as non ECC, which should put an end to the claims of all DDR5 being ECC memory.

Micron Technology, Inc. (Nasdaq: MU) today announced results for its fourth quarter and full year of fiscal 2021, which ended Sept. 2, 2021. "Micron's outstanding fourth quarter execution capped a year of several key milestones," said Micron Technology President and CEO Sanjay Mehrotra. "In fiscal 2021, we established DRAM and NAND technology leadership, drove record revenues across multiple markets, and initiated a quarterly dividend. The demand outlook for 2022 is strong, and Micron is delivering innovative solutions to our customers, fueling our long-term growth."

Investments in capital expenditures, net were $2.01 billion for the fourth quarter of 2021 and $9.72 billion for the full year of 2021, which resulted in adjusted free cash flows of $1.88 billion for the fourth quarter of 2021 and $2.75 billion for the full year of 2021. Micron repurchased approximately 13.9 million shares of its common stock for $1.05 billion during the fourth quarter of 2021 and 15.6 million shares of its common stock for $1.20 billion during the full year of 2021 and ended the year with cash, marketable investments, and restricted cash of $10.46 billion, for a net cash position of $3.69 billion.

Following the peak period of production in 3Q21, the supply of DRAM will likely begin to outpace demand in 4Q21, according to TrendForce's latest investigations (the surplus of DRAM supply is henceforth referred to as "sufficiency ratio", expressed as a percentage). In addition, while DRAM suppliers are generally carrying a healthy level of inventory, most of their clients in the end-product markets are carrying a higher level of DRAM inventory than what is considered healthy, meaning these clients will be less willing to procure additional DRAM going forward. TrendForce therefore forecasts a downward trajectory for DRAM ASP in 4Q21. More specifically, DRAM products that are currently in oversupply may experience price drops of more than 5% QoQ, and the overall DRAM ASP will likely decline by about 3-8% QoQ in 4Q21.

Although WFH and distance learning applications previously generated high demand for notebook computers, increasingly widespread vaccinations in Europe and North America have now weakened this demand, particularly for Chromebooks. As a result, global production of notebooks is expected to decline in 4Q21, in turn propelling the sufficiency ratio of PC DRAM to 1.38%, which indicates that PC DRAM will no longer be in short supply in 4Q21. However, PC DRAM accounts for a relatively low share of DRAM manufacturers' DRAM supply bits, since these suppliers have allocated more production capacities to server DRAM, which is in relatively high demand. Hence, there will unlikely be a severe surplus of PC DRAM in 4Q21. It should also be pointed out that, on average, the current spot prices of PC DRAM modules are far lower than their contract prices for 3Q21. TrendForce therefore expects an imminent 5-10% QoQ decline in PC DRAM contract prices for 4Q21, with potential for declines that are even greater than 10% for certain transactions, as PC OEMs anticipate further price drops in PC DRAM prices in the future.

Lexar unveiled out the Professional NM800, a premium follow-up to its NM620 performance-segment SSD from Spring. The NM800 takes advantage of PCI-Express Gen 4 and NVMe 1.4 protocol, and comes in capacities of 512 GB and 1 TB. The 512 GB variant offers sequential transfer rates of up to 7000 MB/s reads with up to 3000 MB/s writes, and random-access throughput of 200k/500k (read/write) IOPS. The 1 TB variant, on the other hand, does up to 7400 MB/s sequential reads, up to 5800 MB/s sequential writes, and 400k/750k IOPS. The company didn't put out which combination of controller and NAND flash it is using, but we suspect that the drive is based on the Innogrit IG5236 "Rainer" controller, and Micron 3D TLC NAND flash. Endurance of the drives is rated at 250 TBW for the 512 GB variant, and 500 TBW for the 1 TB variant. The 512 GB variant is expected to be priced at 99€, and the 1 TB variant at 179€.