NEC Corporation today announced that it has succeeded in developing a new SRAM (Static Random Access Memory) - compatible MRAM that can operate at 250MHz, the world's fastest MRAM (Magnetoresistive Random Access Memory) operation speed. MRAM is expected to be the dominant next-generation memory technology as it realizes ultra fast operation speeds, nonvolatility - ability to retain data with the power off, and unlimited write endurance. Verification at the SRAM speed level proves that the newly-developed MRAM could be embedded in system LSIs as SRAM substitutes in the future.