Manufacturing Description

Module Manufacturer:	Corsair
Module Part Number:	CMN32GX4M4Z3200C16
DRAM Manufacturer:	Samsung
DRAM Components:	K4A8G085W[B/C/D]-BCWE
DRAM Die Revision / Process Node:	N/A / Not determined
Module Manufacturing Date:	Undefined
Module Manufacturing Location:	Taiwan
Module Serial Number:	00000000h
Module PCB Revision:	00h

Physical & Logical Attributes

Fundamental Memory Class:	DDR4 SDRAM
Module Speed Grade:	DDR4-3200AA
Base Module Type:	UDIMM (133.35 mm)
Module Capacity:	8 GB
Reference Raw Card:	A0 (8 layers)
JEDEC Raw Card Designer:	SK hynix
Module Nominal Height:	31 < H <= 32 mm
Module Thickness Maximum, Front:	1 < T <= 2 mm
Module Thickness Maximum, Back:	1 < T <= 2 mm
Number of DIMM Ranks:	1
Address Mapping from Edge Connector to DRAM:	Standard
DRAM Device Package:	Standard Monolithic
DRAM Device Package Type:	78-ball FBGA
DRAM Device Die Count:	Single die
Signal Loading:	Not specified
Number of Column Addresses:	10 bits
Number of Row Addresses:	16 bits
Number of Bank Addresses:	2 bits (4 banks)
Bank Group Addressing:	2 bits (4 groups)
DRAM Device Width:	8 bits
Programmed DRAM Density:	8 Gb
Calculated DRAM Density:	8 Gb
Number of DRAM components:	8
DRAM Page Size:	1 KB
Primary Memory Bus Width:	64 bits
Memory Bus Width Extension:	0 bits
DRAM Post Package Repair:	Not supported
Soft Post Package Repair:	Not supported

DRAM Timing Parameters

Fine Timebase:	0.001 ns
Medium Timebase:	0.125 ns
CAS Latencies Supported:	7T, 8T, 9T, 10T, 11T, 12T, 13T, 14T, 15T, 16T, 17T, 18T, 19T, 20T, 21T, 22T, 23T, 24T
Minimum Clock Cycle Time (tCK min):	0.625 ns (1600.00 MHz)
Maximum Clock Cycle Time (tCK max):	1.500 ns (666.67 MHz)
CAS# Latency Time (tAA min):	13.740 ns
RAS# to CAS# Delay Time (tRCD min):	13.740 ns
Row Precharge Delay Time (tRP min):	13.740 ns
Active to Precharge Delay Time (tRAS min):	33.000 ns
Act to Act/Refresh Delay Time (tRC min):	46.865 ns
Normal Refresh Recovery Delay Time (tRFC1 min):	349.000 ns
2x mode Refresh Recovery Delay Time (tRFC2 min):	259.000 ns
4x mode Refresh Recovery Delay Time (tRFC4 min):	159.000 ns
Short Row Active to Row Active Delay (tRRD_S min):	3.750 ns
Long Row Active to Row Active Delay (tRRD_L min):	5.625 ns
Long CAS to CAS Delay Time (tCCD_L min):	5.356 ns
Four Active Windows Delay (tFAW min):	21.000 ns
Maximum Active Window (tMAW):	8192*tREFI
Maximum Activate Count (MAC):	Unlimited MAC
DRAM VDD 1.20 V operable/endurant:	Yes/Yes
Supply Voltage (VDD), Min / Typical / Max:	1.16V / 1.20V / 1.26V
Activation Supply Voltage (VPP), Min / Typical / Max:	2.41V / 2.50V / 2.75V
Termination Voltage (VTT), Min / Typical / Max:	0.565V / 0.605V / 0.640V

Thermal Parameters

Module Thermal Sensor:

Incorporated

Integrated Temperature Sensor

Manufacturer:	STMicroelectronics
Model:	STTS2004
Revision:	01h
Temperature Monitor Status:	Active
Current Ambient Temperature:	35.750 °C
Sensor Resolution:	0.2500 °C (10-bit ADC)
Accuracy over the active range (75 °C to 95 °C):	±1 °C
Accuracy over the monitoring range (40 °C to 125 °C):	±2 °C
Open-drain Event Output:	Disabled
10V of VHV on A0 pin:	Supported
Negative Temperature Measurements:	Supported
Interrupt capabilities:	Supported

SPD Protocol

SPD Revision:	1.0
SPD Bytes Total:	512
SPD Bytes Used:	384
SPD Checksum (Bytes 00h-7Dh):	F2E1h (OK)
SPD Checksum (Bytes 80h-FDh):	58B6h (OK)

Part number details

JEDEC DIMM Label:

8GB 1Rx8 PC4-3200AA-UA0-10

Frequency	CAS	RCD	RP	RAS	RC	RRDS	RRDL	CCDL	FAW
1600 MHz	24	22	22	53	75	6	9	9	34
1600 MHz	23	22	22	53	75	6	9	9	34
1600 MHz	22	22	22	53	75	6	9	9	34
1466 MHz	21	21	21	49	69	6	9	8	31
1333 MHz	20	19	19	44	63	5	8	8	28
1333 MHz	19	19	19	44	63	5	8	8	28
1200 MHz	18	17	17	40	57	5	7	7	26
1200 MHz	17	17	17	40	57	5	7	7	26
1067 MHz	16	15	15	36	50	4	6	6	23
1067 MHz	15	15	15	36	50	4	6	6	23
933 MHz	14	13	13	31	44	4	6	5	20
933 MHz	13	13	13	31	44	4	6	5	20
800 MHz	12	11	11	27	38	3	5	5	17
800 MHz	11	11	11	27	38	3	5	5	17
667 MHz	10	10	10	22	32	3	4	4	14
667 MHz	9	10	10	22	32	3	4	4	14
667 MHz	8	10	10	22	32	3	4	4	14
667 MHz	7	10	10	22	32	3	4	4	14

Intel Extreme Memory Profiles

Profiles Revision: 2.0
Profile 1 (Certified) Enables: Yes
Profile 2 (Extreme) Enables: No
Profile 1 Channel Config: 1 DIMM/channel
XMP Parameter	Profile 1	Profile 2
Speed Grade:	DDR4-3200	N/A
DRAM Clock Frequency:	1600 MHz	N/A
Module VDD Voltage Level:	1.35 V	N/A
Minimum DRAM Cycle Time (tCK):	0.625 ns	N/A
CAS Latencies Supported:	24T,23T,22T,21T, 20T,19T,18T,17T, 16T,15T,14T,13T, 12T,11T,10T,9T,8T,7T	N/A
CAS Latency Time (tAA):	16T	N/A
RAS# to CAS# Delay Time (tRCD):	20T	N/A
Row Precharge Delay Time (tRP):	20T	N/A
Active to Precharge Delay Time (tRAS):	38T	N/A
Active to Active/Refresh Delay Time (tRC):	58T	N/A
Four Activate Window Delay Time (tFAW):	36T	N/A
Short Activate to Activate Delay Time (tRRD_S):	6T	N/A
Long Activate to Activate Delay Time (tRRD_L):	9T	N/A
Normal Refresh Recovery Delay Time (tRFC1):	559T	N/A
2x mode Refresh Recovery Delay Time (tRFC2):	415T	N/A
4x mode Refresh Recovery Delay Time (tRFC4):	255T	N/A
Show delays in nanoseconds