Proprietà modulo di memoria:
Nome modulo [ TRIAL VERSION ]
Numero di serie Nessuno
Capacità modulo 8 GB (2 ranks, 16 banks)
Tipo modulo [ TRIAL VERSION ]
Tipo memoria DDR4 SDRAM
Velocità (XMP) DDR4-3200 (1600 MHz)
Velocità DDR4-2133 (1066 MHz)
Ampiezza bus 64 bit
Tensione (XMP) 1.35 V
Tensione 1.2 V
Metodo rilevamento errore Nessuno
Produttore DRAM Samsung
DRAM Stepping 00h
SDRAM Die Count 1
Timing della memoria:
@ 1600 MHz (XMP) 17-18-18-36 (CL-RCD-RP-RAS)
@ 1600 MHz (XMP) 16-18-18-36 (CL-RCD-RP-RAS)
@ 1500 MHz (XMP) 15-17-17-34 (CL-RCD-RP-RAS)
@ 1400 MHz (XMP) 14-16-16-32 (CL-RCD-RP-RAS)
@ 1300 MHz (XMP) 13-14-14-30 (CL-RCD-RP-RAS)
@ 1200 MHz (XMP) 12-13-13-27 (CL-RCD-RP-RAS)
@ 1100 MHz (XMP) 11-12-12-25 (CL-RCD-RP-RAS)
@ 900 MHz (XMP) 9-10-10-21 (CL-RCD-RP-RAS)
@ 1066 MHz 19-15-15-36 (CL-RCD-RP-RAS) / 50-278-171-118-6-4-6-23 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-CCDL-FAW)
@ 1066 MHz 18-15-15-36 (CL-RCD-RP-RAS) / 50-278-171-118-6-4-6-23 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-CCDL-FAW)
@ 1066 MHz 16-15-15-36 (CL-RCD-RP-RAS) / 50-278-171-118-6-4-6-23 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-CCDL-FAW)
@ 1066 MHz 15-15-15-36 (CL-RCD-RP-RAS) / 50-278-171-118-6-4-6-23 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-CCDL-FAW)
@ 1037 MHz 14-14-14-35 (CL-RCD-RP-RAS) / 49-270-166-115-6-4-6-22 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-CCDL-FAW)
@ 962 MHz 13-13-13-32 (CL-RCD-RP-RAS) / 45-251-155-106-6-4-6-21 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-CCDL-FAW)
@ 888 MHz 12-12-12-30 (CL-RCD-RP-RAS) / 42-232-143-98-5-4-5-19 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-CCDL-FAW)
@ 814 MHz 11-11-11-27 (CL-RCD-RP-RAS) / 38-212-131-90-5-4-5-18 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-CCDL-FAW)
@ 666 MHz 9-9-9-22 (CL-RCD-RP-RAS) / 31-174-107-74-4-3-4-14 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-CCDL-FAW)
Extreme Memory Profile v2.0:
Nome profilo Enthusiast (Certified)
Velocità DDR4-3200 (1600 MHz)
Tensione 1.35 V
DiMM per canale raccomandate 1
@ 1600 MHz 17-18-18-36 (CL-RCD-RP-RAS) / 64-416-256-176-9-6-36 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-FAW)
@ 1600 MHz 16-18-18-36 (CL-RCD-RP-RAS) / 64-416-256-176-9-6-36 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-FAW)
@ 1500 MHz 15-17-17-34 (CL-RCD-RP-RAS) / 60-390-240-165-9-6-33 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-FAW)
@ 1400 MHz 14-16-16-32 (CL-RCD-RP-RAS) / 56-364-224-154-8-6-31 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-FAW)
@ 1300 MHz 13-14-14-30 (CL-RCD-RP-RAS) / 52-338-208-143-8-5-29 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-FAW)
@ 1200 MHz 12-13-13-27 (CL-RCD-RP-RAS) / 48-312-192-132-7-5-27 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-FAW)
@ 1100 MHz 11-12-12-25 (CL-RCD-RP-RAS) / 44-286-176-121-7-5-25 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-FAW)
@ 900 MHz 9-10-10-21 (CL-RCD-RP-RAS) / 36-234-144-99-6-4-20 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-FAW)
Caratteristiche modulo di memoria:
Monolithic DRAM Device Sì
Thermal Sensor Assente
Produttore:
Nome società Patriot Memory
Informazioni sul prodotto
https://patriotmemory.com/product-category/computer-memory