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Processor | Intel Core 2 Quad Q6600 G0 VID: 1.2125 |
---|---|
Motherboard | GIGABYTE GA-P35-DS3P rev.2.0 |
Cooling | Thermalright Ultra-120 eXtreme + Noctua NF-S12 Fan |
Memory | 4x1 GB PQI DDR2 PC2-6400 |
Video Card(s) | Colorful iGame Radeon HD 4890 1 GB GDDR5 |
Storage | 2x 500 GB Seagate Barracuda 7200.11 32 MB RAID0 |
Display(s) | BenQ G2400W 24-inch WideScreen LCD |
Case | Cooler Master COSMOS RC-1000 (sold), Cooler Master HAF-932 (delivered) |
Audio Device(s) | Creative X-Fi XtremeMusic + Logitech Z-5500 Digital THX |
Power Supply | Chieftec CFT-1000G-DF 1kW |
Software | Laptop: Lenovo 3000 N200 C2DT2310/3GB/120GB/GF7300/15.4"/Razer |
A quick and brief report on Innovation@Intel claims that the company's engineers have discovered a way to make transistors using new silicon substrate and thus reduce the heat and voltage output of future processors. The new transistors run far cooler - at about ½ the voltage, consuming only 1/10th the power of today's transistors.
View at TechPowerUp Main Site
Intel recently disclosed advancement details on a P-channel transistor, built on a silicon substrate, that makes use of compound semiconductors, also known as III-V materials because they are made of elements that straddle silicon in the periodic table, silicon being in column IV. This research resulted in the highest performing P-channel transistors reported to date. A year earlier, Intel described III-V N-channel transistors, also built on a silicon substrate. When combined, these two results could form the building blocks for CMOS logic circuits, which use both N-channel and P-channel transistors. Potentially suitable for future microprocessors, they run far cooler - at about ½ the voltage, consuming only 1/10th the power of today's transistors.
View at TechPowerUp Main Site