zekrahminator
McLovin
- Joined
- Jan 29, 2006
- Messages
- 9,066 (1.31/day)
- Location
- My house.
| Processor | AMD Athlon 64 X2 4800+ Brisbane @ 2.8GHz (224x12.5, 1.425V) |
|---|---|
| Motherboard | Gigabyte sumthin-or-another, it's got an nForce 430 |
| Cooling | Dual 120mm case fans front/rear, Arctic Cooling Freezer 64 Pro, Zalman VF-900 on GPU |
| Memory | 2GB G.Skill DDR2 800 |
| Video Card(s) | Sapphire X850XT @ 580/600 |
| Storage | WD 160 GB SATA hard drive. |
| Display(s) | Hanns G 19" widescreen, 5ms response time, 1440x900 |
| Case | Thermaltake Soprano (black with side window). |
| Audio Device(s) | Soundblaster Live! 24 bit (paired with X-530 speakers). |
| Power Supply | ThermalTake 430W TR2 |
| Software | XP Home SP2, can't wait for Vista SP1. |
MIT researchers estimate that in roughly 10 to 15 years, we will hit a wall when it comes to increasing the performance of silicon. And so MIT got funding from Intel and began designing the next transistor material. Indium gallium arsenide, or InGaAs, is so far a very promising candidate. It moves electrons several times faster then silicon, does so in a 60nm transistor, and at a much lower voltage (.5 volts). Such promising material is much more fragile then silicon, which may cause problems during manufacturing. Intel, one of the sponsors of the project, is absolutely thrilled with the current results of the project.
View at TechPowerUp Main Site
MIT will show off what it has at the IEEE International Electron Devices Meeting on December 11. MIT predicts that it will have working transistor prototypes using the new technology in 2 years.
View at TechPowerUp Main Site
