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Processor | Intel Core 2 Quad Q6600 G0 VID: 1.2125 |
---|---|
Motherboard | GIGABYTE GA-P35-DS3P rev.2.0 |
Cooling | Thermalright Ultra-120 eXtreme + Noctua NF-S12 Fan |
Memory | 4x1 GB PQI DDR2 PC2-6400 |
Video Card(s) | Colorful iGame Radeon HD 4890 1 GB GDDR5 |
Storage | 2x 500 GB Seagate Barracuda 7200.11 32 MB RAID0 |
Display(s) | BenQ G2400W 24-inch WideScreen LCD |
Case | Cooler Master COSMOS RC-1000 (sold), Cooler Master HAF-932 (delivered) |
Audio Device(s) | Creative X-Fi XtremeMusic + Logitech Z-5500 Digital THX |
Power Supply | Chieftec CFT-1000G-DF 1kW |
Software | Laptop: Lenovo 3000 N200 C2DT2310/3GB/120GB/GF7300/15.4"/Razer |
Hynix Semiconductor today announced it has received validation on its DDR3 memory components and modules from Intel. The newly-validated DDR3 products are 1GB DDR3 SDRAM Unbuffered-DIMMs manufactured on 80nm process technology. These devices have operating speeds from 800MHz to 1066MHz with reduced voltage to 1.5V. These speeds are offered in latency combinations of 5-5-5 and 6-6-6 for the 800MHz, and 7-7-7 for the 1066MHz memory modules. Mass production of the 1GB DDR3 on the 80nm line will begin in the third quarter of this year. Hynix plans to manufacture the product on a 66nm process beginning in late 2007.
View at TechPowerUp Main Site
View at TechPowerUp Main Site