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A report via EETimes slates Intel's own working MRAM (Magnetoresistive Random-Access Memory) is ready for production in high-volume manufacturing. MRAM is a nonvolatile memory technology, meaning that it retains information even if there is a change in powerstate (ie, power loss), meaning that it's more akin to a storage device than to, say, RAM.
But why does MRAM matter, really? Well, MRAM is being developed as a long-term candidate to a universal memory solution, replacing both DRAM (a volatile memory technology) and NAND flash (a nonvolatile one), since node scaling with these technologies is becoming increasingly harder. MRAM promises better-scaling (at the foundry level) processes, with much higher yield rates. The fact that MRAM has been demonstrated to be able to achieve 1 ns settling times, better than the currently accepted theoretical limits for DRAM, and much higher write speeds (as much as thousands of times faster) compared to NAND flash.
MRAM, at its current production characteristics, enables 10-year data retention at 200°C, and endurance of more than 10^6 switching cycles, said Ligiong Wei, an Intel engineer who presented the paper Tuesday. In addition to high endurance, it's being reported that the 22-nm embedded MRAM technology has a bit yield rate that's greater than 99.9% - an amazing feat for such a relatively secretive technology.
There seem to be some questions regarding what exactly is the production process being used a 22 nm process is being reported, but other outlets say this is actually a "relaxed" 14 nm fabrication node with much of Intel's 14 nm technologies thrown in. Whatever the case, it's apparently ready for prime-time.
View at TechPowerUp Main Site
But why does MRAM matter, really? Well, MRAM is being developed as a long-term candidate to a universal memory solution, replacing both DRAM (a volatile memory technology) and NAND flash (a nonvolatile one), since node scaling with these technologies is becoming increasingly harder. MRAM promises better-scaling (at the foundry level) processes, with much higher yield rates. The fact that MRAM has been demonstrated to be able to achieve 1 ns settling times, better than the currently accepted theoretical limits for DRAM, and much higher write speeds (as much as thousands of times faster) compared to NAND flash.
MRAM, at its current production characteristics, enables 10-year data retention at 200°C, and endurance of more than 10^6 switching cycles, said Ligiong Wei, an Intel engineer who presented the paper Tuesday. In addition to high endurance, it's being reported that the 22-nm embedded MRAM technology has a bit yield rate that's greater than 99.9% - an amazing feat for such a relatively secretive technology.
There seem to be some questions regarding what exactly is the production process being used a 22 nm process is being reported, but other outlets say this is actually a "relaxed" 14 nm fabrication node with much of Intel's 14 nm technologies thrown in. Whatever the case, it's apparently ready for prime-time.
View at TechPowerUp Main Site