- Joined
- Oct 9, 2007
- Messages
- 47,229 (7.55/day)
- Location
- Hyderabad, India
System Name | RBMK-1000 |
---|---|
Processor | AMD Ryzen 7 5700G |
Motherboard | ASUS ROG Strix B450-E Gaming |
Cooling | DeepCool Gammax L240 V2 |
Memory | 2x 8GB G.Skill Sniper X |
Video Card(s) | Palit GeForce RTX 2080 SUPER GameRock |
Storage | Western Digital Black NVMe 512GB |
Display(s) | BenQ 1440p 60 Hz 27-inch |
Case | Corsair Carbide 100R |
Audio Device(s) | ASUS SupremeFX S1220A |
Power Supply | Cooler Master MWE Gold 650W |
Mouse | ASUS ROG Strix Impact |
Keyboard | Gamdias Hermes E2 |
Software | Windows 11 Pro |
Intel on Thursday made several technological disclosures about its latest silicon fabrication process, the 10 nm SuperFin. With this, the company is changing the nomenclature of its node refinements, away from the ## nm++ naming scheme (with each "+" denoting a refinement, or internode), to a more descriptive naming scheme. The new 10 nm SuperFin node is the first refinement of the company's 10 nm node that debuted with the company's 10th Gen Core "Ice Lake" processors last year, and promises energy efficiency in the ballpark of 7 nm-class nodes by competitors TSMC and Samsung. While past generations of internodes (refinements) delivered energy efficiency improvements of around 3-5%, 10 nm SuperFin offers the kind of improvements expected from a brand new node, according to Intel.
The 10 nm SuperFin node is composed of two key innovations, the SuperMIM capacitor and a redesigned FinFET transistor. The new SuperMIM (metal insulator metal) capacitor offers a 5x increase in capacitance compared to devices in this class. The redesigned FinFET introduces a new barrier that reduces via resistance by 30%. Combined, the 10 nm SuperFin node affords chips a V/F curve comparable to a die-shrink to a whole new silicon fabrication node, without any change in transistor density. The first product built on 10 nm SuperFin is the upcoming Core "Tiger Lake" processor addressing the client-segment. The company is already working on enhancements of this node relevant for data-center processors.
View at TechPowerUp Main Site
The 10 nm SuperFin node is composed of two key innovations, the SuperMIM capacitor and a redesigned FinFET transistor. The new SuperMIM (metal insulator metal) capacitor offers a 5x increase in capacitance compared to devices in this class. The redesigned FinFET introduces a new barrier that reduces via resistance by 30%. Combined, the 10 nm SuperFin node affords chips a V/F curve comparable to a die-shrink to a whole new silicon fabrication node, without any change in transistor density. The first product built on 10 nm SuperFin is the upcoming Core "Tiger Lake" processor addressing the client-segment. The company is already working on enhancements of this node relevant for data-center processors.
View at TechPowerUp Main Site