MxPhenom 216
ASIC Engineer
- Joined
- Aug 31, 2010
- Messages
- 13,009 (2.49/day)
- Location
- Loveland, CO
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There is a physical limit to how small a process can go before the constraints of the manufacturing equipment and atomic density prevents further reduction. 1nm is getting really close to that limit..
Sort of, we got to that point at 22nm when everyone was trying to figure out how to go smaller. FINFET became that solution and its gotten us to 5nm.
Now we are in the same position and so far the proven ways to get us under 5nm has been Nanosheet or Nanowire (Gate all-around) FETs. Its all about how to control the channel effectively and not allow electrons to leak from source to drain even if the FET is technically off. FINFET has a lot better control over channel behavior, but as the transistors get smaller we run into same problems exhibited by normal planar FETs when first trying to get below 22nm.
You are dead on about manufacturing though, going to FINFET was hell and a half for the industry due to tight tolerances to how FINFETs function. Nanosheet and wire solutions are even more difficult. Costs is going to be insane.
This new contact material is pretty interesting actually. Might add a bit to manufacturing costs though.
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