- Joined
- Oct 9, 2007
- Messages
- 47,243 (7.55/day)
- Location
- Hyderabad, India
| System Name | RBMK-1000 |
|---|---|
| Processor | AMD Ryzen 7 5700G |
| Motherboard | ASUS ROG Strix B450-E Gaming |
| Cooling | DeepCool Gammax L240 V2 |
| Memory | 2x 8GB G.Skill Sniper X |
| Video Card(s) | Palit GeForce RTX 2080 SUPER GameRock |
| Storage | Western Digital Black NVMe 512GB |
| Display(s) | BenQ 1440p 60 Hz 27-inch |
| Case | Corsair Carbide 100R |
| Audio Device(s) | ASUS SupremeFX S1220A |
| Power Supply | Cooler Master MWE Gold 650W |
| Mouse | ASUS ROG Strix Impact |
| Keyboard | Gamdias Hermes E2 |
| Software | Windows 11 Pro |
Samsung Electronics Co., Ltd., a world leader in advanced semiconductor technology, today introduces its newest radio frequency (RF) technology based on 8-nanometer (nm) process. This cutting-edge foundry technology is expected to provide a "one chip solution," specifically for 5G communications with support for multi-channel and multi-antenna chip designs. Samsung's 8 nm RF platform extension is expected to expand the company's leadership in the 5G semiconductor market from sub-6 GHz to mmWave applications.
Samsung's 8 nm RF process technology is the latest addition to an already broad portfolio of RF-related solutions, including 28 nm- and 14 nm-based RF. The company has established its RF market leadership through the shipping of more than 500 million mobile RF chips for premium smartphones since 2017. "Through excellence in innovation and process manufacturing, we've reinforced our next-generation wireless communication offerings," said Hyung Jin Lee, Master of Foundry Technology Development Team at Samsung Electronics. "As 5G mmWave expands, Samsung's 8nm RF will be a great solution for customers looking for long battery life and excellent signal quality on compact mobile devices."
Samsung's New RFeFET Architecture
With continued scaling to advanced nodes, digital circuits have improved significantly in performance, power consumption, and area (PPA), whereas the analog/RF blocks haven't enjoyed such an improvement due to degenerative parasitics such as increased resistance from narrow line width. As a result, most communications chips tend to see degraded RF characteristics such as deteriorated amplification performance of reception frequency and increased power consumption.
To overcome the analog/RF scaling challenges, Samsung has developed a unique architecture exclusive to 8nm RF named RFextremeFET (RFeFET ) that can significantly improve RF characteristics while using less power. In comparison to 14 nm RF, Samsung's RFeFET supplements the digital PPA scaling and restores the analog/RF scaling at the same time, thereby enabling high-performance 5G platforms.
Samsung's process optimization maximizes channel mobility while minimizing parasitics. As the performance of RFeFET is greatly improved, the total number of transistors of RF chips and the area of analog/RF blocks can be reduced.
Compared to 14 nm RF, Samsung's 8nm RF process technology provides up to a 35-percent increase in power efficiency with a 35-percent decrease in the RF chip area as a result of the RFeFET architectural innovation.
View at TechPowerUp Main Site
Samsung's 8 nm RF process technology is the latest addition to an already broad portfolio of RF-related solutions, including 28 nm- and 14 nm-based RF. The company has established its RF market leadership through the shipping of more than 500 million mobile RF chips for premium smartphones since 2017. "Through excellence in innovation and process manufacturing, we've reinforced our next-generation wireless communication offerings," said Hyung Jin Lee, Master of Foundry Technology Development Team at Samsung Electronics. "As 5G mmWave expands, Samsung's 8nm RF will be a great solution for customers looking for long battery life and excellent signal quality on compact mobile devices."
Samsung's New RFeFET Architecture
With continued scaling to advanced nodes, digital circuits have improved significantly in performance, power consumption, and area (PPA), whereas the analog/RF blocks haven't enjoyed such an improvement due to degenerative parasitics such as increased resistance from narrow line width. As a result, most communications chips tend to see degraded RF characteristics such as deteriorated amplification performance of reception frequency and increased power consumption.
To overcome the analog/RF scaling challenges, Samsung has developed a unique architecture exclusive to 8nm RF named RFextremeFET (RFeFET ) that can significantly improve RF characteristics while using less power. In comparison to 14 nm RF, Samsung's RFeFET supplements the digital PPA scaling and restores the analog/RF scaling at the same time, thereby enabling high-performance 5G platforms.
Samsung's process optimization maximizes channel mobility while minimizing parasitics. As the performance of RFeFET is greatly improved, the total number of transistors of RF chips and the area of analog/RF blocks can be reduced.
Compared to 14 nm RF, Samsung's 8nm RF process technology provides up to a 35-percent increase in power efficiency with a 35-percent decrease in the RF chip area as a result of the RFeFET architectural innovation.
View at TechPowerUp Main Site
