Unlikely, as they can't focus the UV light that wide. Unless this is on some older process.
They can use some good old stitching (but maybe it's not old enough for patents to have expired ...
Ian Dr. Cutress has his doubts). One of the issues is that an ASML scanner can process 170 wafers per hour but that number is certainly reduced if it's used to draw the patterns for half of each chip in each pass, not whole chip.
Here's how a reticle (photomask) looks like:
TSMC
EUV can't make them bigger than 429 unless there is some new developpement
Ironically, 429 mm2 is THE new development, entering mass production in 2025 (if you believe it - I'd rather say 202y or 202z or 202α). That's high-numerical aperture EUV. The photomask size will remain the same. The optical system, however, will reduce the image to a surface area that's half smaller than it is now.
Thanks for the link! I sometimes read stuff at Semi Engineering but it's usually over my head.
Or they could have blocks with 4 dies uncut and interconnected on the wafer itself.
Yes, that's the kind of stitching I mentioned. Not four equal dies but two different halves that together make one die.