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System Name | RBMK-1000 |
---|---|
Processor | AMD Ryzen 7 5700G |
Motherboard | ASUS ROG Strix B450-E Gaming |
Cooling | DeepCool Gammax L240 V2 |
Memory | 2x 8GB G.Skill Sniper X |
Video Card(s) | Palit GeForce RTX 2080 SUPER GameRock |
Storage | Western Digital Black NVMe 512GB |
Display(s) | BenQ 1440p 60 Hz 27-inch |
Case | Corsair Carbide 100R |
Audio Device(s) | ASUS SupremeFX S1220A |
Power Supply | Cooler Master MWE Gold 650W |
Mouse | ASUS ROG Strix Impact |
Keyboard | Gamdias Hermes E2 |
Software | Windows 11 Pro |
Samsung, which recently announced its 12-high HBM3E memory, is expected to demonstrate them at the upcoming NVIDIA GTC 2024 event. Business Korea reports that the HBM3E stacks will power NVIDIA's "Hopper" H200 AI GPU, a more advanced version of the H100, which features support for HBM3E, and larger amounts of memory. Samsung's 12-high HBM3E stack has 12 layers of DRAM stacked with a Samsung innovation in wiring the stack. Each stack offers density as high as 288 Gbit, or 36 GB, which works out to 216 GB of memory over the 6144-bit HBM3E memory interface of the H200. Neither Samsung nor NVIDIA have put out DRAM speeds for the Samsung 12H HBM3E as configured for the H200.
View at TechPowerUp Main Site | Source
View at TechPowerUp Main Site | Source