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Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents patterned structures obtained after exposure with the 0.55NA EUV scanner in the joint ASML-imec High NA EUV Lithography Lab in Veldhoven, the Netherlands. Random logic structures down to 9,5 nm (19 nm pitch), random vias with 30 nm center-to-center distance, 2D features at 22 nm pitch, and a DRAM specific lay out at P32nm were printed after single exposure, using materials and baseline processes that were optimized for High NA EUV by imec and its partners in the framework of imec's Advanced Patterning Program. With these results, imec confirms the readiness of the ecosystem to enable single exposure high-resolution High NA EUV Lithography.
Following the recent opening of the joint ASML-imec High NA EUV Lithography Lab in Veldhoven, the Netherlands, customers now have access to the (TWINSCAN EXE:5000) High NA EUV scanner to develop private High NA EUV use cases leveraging the customer's own design rules and lay outs.
Imec has successfully patterned single exposure random logic structures with 9,5 nm dense metal lines, corresponding to a 19 nm pitch, achieving sub 20 nm tip-to-tip dimensions. Random vias with a 30 nm center-to-center distance showcased excellent pattern fidelity and critical dimension uniformity. Furthermore, 2D features at a P22nm pitch exhibited outstanding performance, highlighting the potential of High NA Lithography to enable 2D routing.
Beyond logic structures, imec successfully patterned, in a single exposure, designs that integrate the storage node landing pad with the bit line periphery for DRAM. This achievement underscores the potential of High NA technology to replace the need of several mask layers by 1 single exposure.
These breakthrough results follow intensive preparatory work by imec and ASML - in close collaboration with its partners - to ready the patterning ecosystem and metrology for the first generation of High NA EUV Lithography. Prior to the exposures, imec prepared dedicated wafer stacks (including advanced resists, underlayers and photomasks), and transferred High NA EUV baseline processes (such as optical proximity correction (OPC), integrated patterning and etch techniques) to the 0.55NA EUV scanner.
View at TechPowerUp Main Site | Source
Following the recent opening of the joint ASML-imec High NA EUV Lithography Lab in Veldhoven, the Netherlands, customers now have access to the (TWINSCAN EXE:5000) High NA EUV scanner to develop private High NA EUV use cases leveraging the customer's own design rules and lay outs.
Imec has successfully patterned single exposure random logic structures with 9,5 nm dense metal lines, corresponding to a 19 nm pitch, achieving sub 20 nm tip-to-tip dimensions. Random vias with a 30 nm center-to-center distance showcased excellent pattern fidelity and critical dimension uniformity. Furthermore, 2D features at a P22nm pitch exhibited outstanding performance, highlighting the potential of High NA Lithography to enable 2D routing.
Beyond logic structures, imec successfully patterned, in a single exposure, designs that integrate the storage node landing pad with the bit line periphery for DRAM. This achievement underscores the potential of High NA technology to replace the need of several mask layers by 1 single exposure.
These breakthrough results follow intensive preparatory work by imec and ASML - in close collaboration with its partners - to ready the patterning ecosystem and metrology for the first generation of High NA EUV Lithography. Prior to the exposures, imec prepared dedicated wafer stacks (including advanced resists, underlayers and photomasks), and transferred High NA EUV baseline processes (such as optical proximity correction (OPC), integrated patterning and etch techniques) to the 0.55NA EUV scanner.
View at TechPowerUp Main Site | Source
