• Welcome to TechPowerUp Forums, Guest! Please check out our forum guidelines for info related to our community.

Toshiba Starts Mass Production of World's First 15 nm NAND Flash Memory

btarunr

Editor & Senior Moderator
Staff member
Joined
Oct 9, 2007
Messages
47,243 (7.55/day)
Location
Hyderabad, India
System Name RBMK-1000
Processor AMD Ryzen 7 5700G
Motherboard ASUS ROG Strix B450-E Gaming
Cooling DeepCool Gammax L240 V2
Memory 2x 8GB G.Skill Sniper X
Video Card(s) Palit GeForce RTX 2080 SUPER GameRock
Storage Western Digital Black NVMe 512GB
Display(s) BenQ 1440p 60 Hz 27-inch
Case Corsair Carbide 100R
Audio Device(s) ASUS SupremeFX S1220A
Power Supply Cooler Master MWE Gold 650W
Mouse ASUS ROG Strix Impact
Keyboard Gamdias Hermes E2
Software Windows 11 Pro
Toshiba Corporation today announced that it has developed the world's first 15-nanometer (nm) process technology, which will apply to 2-bit-per-cell 128-gigabit (16 gigabytes) NAND flash memories. Mass production with the new technology will start at the end of April at Fab 5 Yokkaichi Operations, Toshiba's NAND flash fabrication facility (fab), replacing second generation 19 nm process technology, Toshiba's previous flagship process. The second stage of Fab 5 is currently under construction, and the new technology will also be deployed there.

Toshiba has achieved the world's smallest class chip size with the 15nm process plus improved peripheral circuitry technology. The new chips achieve the same write speed as chips formed with second generation 19 nm process technology, but boost the data transfer rate to 533 megabits a second, 1.3 times faster, by employing a high speed interface.



Toshiba is now applying the 15 nm process technology 3-bit-per-cell chips, and aims to start mass production in the first quarter of this fiscal year, to June 2014. The company will develop controllers for embedded NAND flash memory in parallel and introduce 3-bit-per-cell products for smartphones and tablets, and will subsequently extend application to notebook PCs by developing a controller compliant with solid state drives (SSD).

Toshiba continues to closely follow its process technology development roadmap and will strengthen product competitiveness and performance by applying leading-edge process to production. Looking to the future, Toshiba will reinforce its market leadership by promoting product innovation and development and ensuring that it is able to respond to a wide variety of clients' product needs, including smartphones, tablets, slim notebook PCs and enterprise products requiring high reliability, including SSD for data centers.

View at TechPowerUp Main Site
 

TheLostSwede

News Editor
Joined
Nov 11, 2004
Messages
17,640 (2.41/day)
Location
Sweden
System Name Overlord Mk MLI
Processor AMD Ryzen 7 7800X3D
Motherboard Gigabyte X670E Aorus Master
Cooling Noctua NH-D15 SE with offsets
Memory 32GB Team T-Create Expert DDR5 6000 MHz @ CL30-34-34-68
Video Card(s) Gainward GeForce RTX 4080 Phantom GS
Storage 1TB Solidigm P44 Pro, 2 TB Corsair MP600 Pro, 2TB Kingston KC3000
Display(s) Acer XV272K LVbmiipruzx 4K@160Hz
Case Fractal Design Torrent Compact
Audio Device(s) Corsair Virtuoso SE
Power Supply be quiet! Pure Power 12 M 850 W
Mouse Logitech G502 Lightspeed
Keyboard Corsair K70 Max
Software Windows 10 Pro
Benchmark Scores https://valid.x86.fr/yfsd9w
15nm 3-bit/cell sounds like a really really bad idea for longevity... but a great idea for cost...
 
Joined
Apr 1, 2014
Messages
503 (0.13/day)
System Name Personal Rig
Processor Intel i5 3570K
Motherboard Asus P8Z77-V
Cooling Noctua NH-U12P Push/Pull
Memory 8GB 1600Mhz Vengeance
Video Card(s) Intel HD4000
Storage Seagate 1TB & 180GB Intel 330
Display(s) AOC I2360P
Case Enermax Vostok
Audio Device(s) Onboard realtek
Power Supply Corsair TX650
Mouse Microsoft OEM 2.0
Keyboard Logitech Internet Pro White
Software Legal ;)
Benchmark Scores Very big
Why would it be a bad idea ?
You're getting 1000 p/e (realistically 3x-5x times more) of endurance at 19nm, so why would 15nm be so different ?


Endurance is not a problem even at 1xnm.
 
Top