- Joined
- Oct 9, 2007
- Messages
- 47,294 (7.53/day)
- Location
- Hyderabad, India
| System Name | RBMK-1000 |
|---|---|
| Processor | AMD Ryzen 7 5700G |
| Motherboard | ASUS ROG Strix B450-E Gaming |
| Cooling | DeepCool Gammax L240 V2 |
| Memory | 2x 8GB G.Skill Sniper X |
| Video Card(s) | Palit GeForce RTX 2080 SUPER GameRock |
| Storage | Western Digital Black NVMe 512GB |
| Display(s) | BenQ 1440p 60 Hz 27-inch |
| Case | Corsair Carbide 100R |
| Audio Device(s) | ASUS SupremeFX S1220A |
| Power Supply | Cooler Master MWE Gold 650W |
| Mouse | ASUS ROG Strix Impact |
| Keyboard | Gamdias Hermes E2 |
| Software | Windows 11 Pro |
Toshiba Corporation today announced that it has started construction of a new state-of-the-art semiconductor fabrication facility, Fab 6, and a new R&D center, the Memory R&D Center, at Yokkaichi Operations in Mie prefecture, Japan, the company's main memory production base.
Fab 6 will be dedicated to production of BiCS FLASH, Toshiba's innovative 3D Flash memory. Like Fab 5, construction will take place in two phases, allowing the pace of investment to be optimized against market trends, with completion of Phase 1 scheduled for summer 2018. Toshiba will determine installed capacity and output targets and schedules by closely monitoring the market.
Toshiba will also construct a Memory R&D Center adjacent to the new fab, with completion targeting December 2017. The facility will advance development of BiCS FLASH and new memories.
Toshiba is determined to enhance its competitiveness in the memory business by timely expansion of BiCS FLASH production in line with market trends, and to retain leadership in innovation in the memory business.
View at TechPowerUp Main Site
Fab 6 will be dedicated to production of BiCS FLASH, Toshiba's innovative 3D Flash memory. Like Fab 5, construction will take place in two phases, allowing the pace of investment to be optimized against market trends, with completion of Phase 1 scheduled for summer 2018. Toshiba will determine installed capacity and output targets and schedules by closely monitoring the market.
Toshiba will also construct a Memory R&D Center adjacent to the new fab, with completion targeting December 2017. The facility will advance development of BiCS FLASH and new memories.
Toshiba is determined to enhance its competitiveness in the memory business by timely expansion of BiCS FLASH production in line with market trends, and to retain leadership in innovation in the memory business.
View at TechPowerUp Main Site