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GIGABYTE today unveiled the M30 line of solid state drives built in the M.2-2280 form-factor, which leverage PCI-Express 3.0 x4 host interface. The drives combine an unknown controller with 256 MB of DDR3L DRAM cache, and 3D TLC NAND flash memory; and comes in capacities of 512 GB and 1 TB. Both these capacity variants have the same amount of DRAM cache. GIGABYTE is using a high-density PCB with 2 oz copper layers, which it claims, can lower controller temperature by up to 15 °C and NAND flash temperature by up to 5 °C.
As for performance, GIGABYTE claims that both capacity variants offer sequential reads of up to 3500 MB/s, and sequential writes of up to 3000 MB/s. The 1 TB variant offers 4K random reads of up to 308,000 IOPS, and random writes of up to 332,000 IOPS; while the 512 GB variant is slightly faster, offering up to 350,000 IOPS 4K random reads, and 302,000 IOPS 4K random writes. The drives are backed by 5-year warranty, the 1 TB variant offers an endurance of 650 TBW, and the 512 GB variant 350 TBW. The company didn't reveal pricing.
View at TechPowerUp Main Site
As for performance, GIGABYTE claims that both capacity variants offer sequential reads of up to 3500 MB/s, and sequential writes of up to 3000 MB/s. The 1 TB variant offers 4K random reads of up to 308,000 IOPS, and random writes of up to 332,000 IOPS; while the 512 GB variant is slightly faster, offering up to 350,000 IOPS 4K random reads, and 302,000 IOPS 4K random writes. The drives are backed by 5-year warranty, the 1 TB variant offers an endurance of 650 TBW, and the 512 GB variant 350 TBW. The company didn't reveal pricing.
![](https://www.techpowerup.com/img/q1rarJKd2c9RhZ3k_thm.jpg)
![](https://www.techpowerup.com/img/8UGjK7P3QGVg3dEg_thm.jpg)
![](https://www.techpowerup.com/img/Tf6ehVtn55tT2qZ3_thm.jpg)
View at TechPowerUp Main Site