malware
New Member
- Joined
- Nov 7, 2004
- Messages
- 5,422 (0.73/day)
- Location
- Bulgaria
| Processor | Intel Core 2 Quad Q6600 G0 VID: 1.2125 |
|---|---|
| Motherboard | GIGABYTE GA-P35-DS3P rev.2.0 |
| Cooling | Thermalright Ultra-120 eXtreme + Noctua NF-S12 Fan |
| Memory | 4x1 GB PQI DDR2 PC2-6400 |
| Video Card(s) | Colorful iGame Radeon HD 4890 1 GB GDDR5 |
| Storage | 2x 500 GB Seagate Barracuda 7200.11 32 MB RAID0 |
| Display(s) | BenQ G2400W 24-inch WideScreen LCD |
| Case | Cooler Master COSMOS RC-1000 (sold), Cooler Master HAF-932 (delivered) |
| Audio Device(s) | Creative X-Fi XtremeMusic + Logitech Z-5500 Digital THX |
| Power Supply | Chieftec CFT-1000G-DF 1kW |
| Software | Laptop: Lenovo 3000 N200 C2DT2310/3GB/120GB/GF7300/15.4"/Razer |
Micron Technology today announced that it is sampling to customers and major enablers the industry's fastest 512 megabit (Mb) Mobile DRAM component, designed for the latest feature-rich mobile electronic devices. Mass production is expected in the second quarter of this year. With mobile applications adding increased computing and multimedia functionality, faster and better performing memory becomes paramount for optimizing performance.
Micron's 512 Mb Mobile DRAM addresses the needs of today's most advanced mobile devices by delivering maximum clock speeds of up to 200MHz allowing the transfer of 400 Mbs of data per second. This industry-leading speed provides the additional bandwidth necessary to boost the operating capability of mobile applications, including running more functions simultaneously without performance issues or powering high speed video.
"The trend of full-featured mobile products that offer more audio, video and computing functionality only continues to grow, creating an increased demand for memory products that can support these advanced capabilities," said Bill Lauer, senior director of marketing for Micron's memory group. "With its industry-leading speed, small form factor and reduced power consumption, Micron's 512 Mb Mobile DRAM is ideal for meeting the requirements of today's handheld products."
In addition to meeting the JEDEC standard 1.8 volt input/output (I/O), the device is also available with a 1.2 volt I/O option that improves signaling for high-speed, high-bandwidth operation and is a key design requirement for next generation mobile chip sets. It also offers an extended operating temperature range from -40 degrees Celsius to +85 degrees Celsius making it optimal for products performing in extreme conditions. The company plans to assemble the 512 Mb Mobile DRAM with NAND flash and Managed NAND parts, and also intends to offer it in a multi-chip package or a package-on-package stack.
The 512 Mb Mobile DRAM chip joins Micron's broad family of innovative memory products for mobile applications that includes other Mobile DRAM parts, NAND Flash, Managed NAND, CellularRAMTM and Multichip Packages (MCP). Micron's mobile product line comes in a wide variety of form factors and densities to meet the diverse needs of the growing mobile market.
View at TechPowerUp Main Site
Micron's 512 Mb Mobile DRAM addresses the needs of today's most advanced mobile devices by delivering maximum clock speeds of up to 200MHz allowing the transfer of 400 Mbs of data per second. This industry-leading speed provides the additional bandwidth necessary to boost the operating capability of mobile applications, including running more functions simultaneously without performance issues or powering high speed video.
"The trend of full-featured mobile products that offer more audio, video and computing functionality only continues to grow, creating an increased demand for memory products that can support these advanced capabilities," said Bill Lauer, senior director of marketing for Micron's memory group. "With its industry-leading speed, small form factor and reduced power consumption, Micron's 512 Mb Mobile DRAM is ideal for meeting the requirements of today's handheld products."
In addition to meeting the JEDEC standard 1.8 volt input/output (I/O), the device is also available with a 1.2 volt I/O option that improves signaling for high-speed, high-bandwidth operation and is a key design requirement for next generation mobile chip sets. It also offers an extended operating temperature range from -40 degrees Celsius to +85 degrees Celsius making it optimal for products performing in extreme conditions. The company plans to assemble the 512 Mb Mobile DRAM with NAND flash and Managed NAND parts, and also intends to offer it in a multi-chip package or a package-on-package stack.
The 512 Mb Mobile DRAM chip joins Micron's broad family of innovative memory products for mobile applications that includes other Mobile DRAM parts, NAND Flash, Managed NAND, CellularRAMTM and Multichip Packages (MCP). Micron's mobile product line comes in a wide variety of form factors and densities to meet the diverse needs of the growing mobile market.
View at TechPowerUp Main Site
