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Scientists have made a big step forward in data storage technology, they've managed to improve the manufacturing process for 3D NAND flash memory. This type of storage technology stacks memory cells on top of each other to obtain higher data density. A team of experts from Lam Research, the University of Colorado Boulder, and Princeton Plasma Physics Lab came up with a better way to etch (the process of carving holes into alternating layers of silicon oxide and silicon nitride) by using hydrogen fluoride plasma. This new method cuts vertical channels through silicon-based materials twice as fast as before achieving 640 nanometers in just one minute.
The team found out that mixing in certain chemicals like phosphorus trifluoride helps the etching process. They also learned that some byproducts can slow down etching, but adding water can help fix this problem. "The salt can decompose at a lower temperature when water is present, which can accelerate etching", said Yuri Barsukov, a former PPPL researcher now working at Lam Research. This breakthrough is important as the need for data storage received a huge boost with the rise of AI programs, that need tons of storage.
The study was published in the Journal of Vacuum Science & Technology A (2024).
View at TechPowerUp Main Site | Source
The team found out that mixing in certain chemicals like phosphorus trifluoride helps the etching process. They also learned that some byproducts can slow down etching, but adding water can help fix this problem. "The salt can decompose at a lower temperature when water is present, which can accelerate etching", said Yuri Barsukov, a former PPPL researcher now working at Lam Research. This breakthrough is important as the need for data storage received a huge boost with the rise of AI programs, that need tons of storage.
The study was published in the Journal of Vacuum Science & Technology A (2024).
View at TechPowerUp Main Site | Source
