DRAM Calculator for Ryzen by 1usmus is the definitive utility to demystify memory overclocking and optimization on AMD Ryzen-powered PCs. It lets you feed in settings you know, and calculates the most optimal related settings (such as latencies), so you get the most from your memory overclock. Version 1.7.0 adds certain memory benchmarks to the utility, including a benchmark for memory bandwidth (reads and writes), and AMD processor inter-core latency tests. The new version also spares you of having to manually input certain current values, by adding the ability to read current memory timings for machines powered by Ryzen 3000-series "Matisse" processors. The new version also adds support for Ryzen Threadripper 3000 "Castle Peak" processor series. Support is also added for SK hynix DJR memory modules. Grab DRAM Calculator for Ryzen from the link below.

DOWNLOAD: DRAM Calculator for Ryzen by 1usmus v1.7.0

Phison Electronics, the industry's leader in flash controller and NAND storage solutions, is demonstrating mainstream performance using 4-bits per cell QLC NAND flash controllers and SSDs at the Consumer Electronics Show 2020 (CES) in Las Vegas, Nevada. In its private suite, Phison is showcasing the addition of support for QLC NAND to its already shipping E16 PCIe Gen 4x4, E12 PCIe Gen 3x4, and S12 SATA controllers that use TLC NAND. Phison's industry leading approach leverages highly successful controllers that were qualified by tier-1 OEMs, are in mass production now, and extends new SSD designs to utilize either TLC or QLC NAND. Phison's proprietary QLC NAND controller technology enables higher SSD capacities in industry standard form factors while meeting the performance demands of mainstream applications.

Phison's flagship E16 series controller for PCIe Gen 4x4 NVMe SSDs can achieve up to 4 TB in capacity with QLC NAND and reaches speeds of 4.9 GB/s for sequential reads and 3.8 GB/s for sequential writes. The E12 series controller enables PCIe Gen 3x4 NVMe SSDs and has a capacity of up to 8 TB and speeds of 3.4 GB/s sequential reads, 3.0 GB/s sequential writes with QLC NAND. For the SATA interface, Phison is also demonstrating the S12 controller series SSDs with up to 16 TB using QLC NAND and performance at 550 MB/s sequential reads and 530 MB/s sequential writes. Phison's DRAM-less S13T controllers enable smaller form factors, have a capacity of up to 2 TB, and operate at 550 MB/s sequential reads and 500 MB/s sequential writes.

One of the big hardware industry changes of 2019 was the formal spin-off of Toshiba Memory as an entirely independent firm called Kioxia. This is big, because Toshiba is regarded as the inventor of NAND flash as we know it; and a pioneering firm with DRAM, NAND flash, and other forms of solid-state storage. Toshiba retains the hard disk business. Having formally begun operations only in Q4-2019, much of Kioxia's upcoming products are in development, but we still caught some of their latest SSDs that implement PCIe gen 4.0 and NVMe 1.4 protocol, besides some former-Toshiba products under new Kioxia branding. Kioxia is planning to make a big splash in the near future as its pioneering Twin BiCS Flash tech hits the market, besides scoring design wins with the automotive and data-center industries.

The CD6 and CM6 SSDs are star-attractions. The CD6 is designed for data-centers, and comes in capacities ranging all the way from 800 GB to 15 TB, with 1 to 3 DWPD endurance. It uses the next-generation U.3 (SFF-TA-1001) connector with PCI-Express 4.0 x4 physical-layer and NVMe 1.4 protocol. Among its security features are SIE, FIPS140-2, and SED Opal/Ruby. The drive is built in the 15 mm-thick 2.5-inch form-factor. The CM6 is its cousin, targeted at enterprise environments with higher mission-criticality. With capacities ranging from 800 GB to a staggering 30 TB, the drive offers sequential transfer-rates of up to 6,400 MB/s by leveraging PCI-Express 4.0 x4 and NVMe 1.4. Much like the CD6, the CM6 uses the new U.3 connector, and is built in the 15 mm form-factor. Endurance and security feature-set are identical to the CD6. We also spotted the 2+ year old rebranded XD5-series and PM5-series in fresh Kioxia colors. Lastly, there are the XG6 and XG6-P SSDs from 2019 transitioned to the Kioxia brand.

Korean DRAM and NAND flash giant SK Hynix brought its latest memory innovations to the 2020 International CES. The star attraction at their booth was the "4D NAND" technology, and some of the first client-segment SSDs based on it. As a concept, 4D NAND surfaced way back in August 2018, and no, it doesn't involve the 4th dimension. Traditional 3D NAND chips use charge-trap flash (CTF) stacks spatially located next to a peripheral block that's responsible for wiring out all of those CTF stacks. In 4D NAND, the peripheral block is stacked along with the CTF stack itself, conserving real-estate on the 2-D plane (which can then be spent on increasing density). We caught two 128-layer 4D NAND-based client-segment drives inbound for 2020, the Platinum P31 M.2 NVMe, and Gold P31 M.2 NVMe. The already launched Gold S31 SATA drive was also there.

Micron has today announced that it started sampling RDIMMs based on DDR5 technology to its industry partners. Designed for server operations, these DDR5 modules come in RDIMM form-factor and feature Error-Correcting Code (ECC) technology for removing any error that occurs inside electronic circuits. The new DDR5 standard offers a massive performance uplift compared to the previous generation of DDR4 memory. For starters, DDR5 will double the MT/s transfer rate to 6400 MT/s, double the speed of the original 3200 MT/s speed for DDR4 that was established by JEDEC. The bandwidth of the new DDR memory is supposed to be 32 GB/s, which is 25% faster than the original 25.6 GB/s bandwidth of DDR4.

With DDR5, the SDRAM prefetch buffer data size is being doubled to 16 data words per memory access, making for a 16n prefetching throughput. Another improvement is that the highest possible density for DDR5 chips is now being up to 64 Gb per chip. Additionally, DDR5 is supposed to bring the power needed for chip operation down to 1.1 volts, which is around 8% lower than what DDR4 achieved. There are also features like MIR (Mirror Pin) which provides better DIMM signaling, and more options for PRECHARGE and REFRESH commands that can now operate on a per bank basis, so specific banks can be refreshed in bank group. It is also worth pointing out that DDR5 chips are manufactured using 1znm memory manufacturing process.

A tiny minute-long power-outage halted production at a Samsung Electronics plant in Hwaseong, South Korea, according to a Reuters report citing Korean news agency Yonhap. This stopped some production lines of DRAM and NAND flash memory. A source with "direct knowledge of the matter" told Reuters that the outage likely caused millions of Dollars in losses to Samsung. Semiconductor manufacturing in general is a very power-sensitive process, and a stoppage at any of its manufacturing stages can result in wasted batches; not to mention the time lost to recovery. For instance, a 30-minute power outage in 2018 inflicted a $43.32 million loss to Samsung.

The cause of the power outage on Tuesday afternoon (31st December), is said to be a fault with a regional transmission cable. It will take Samsung up to two days (mid-Thursday) to get the production line rolling again. On the flipside, the resulting drop in output could help Samsung push out its swelling NAND flash and DRAM inventory, reports Yonhap, citing an analyst.

ADATA Technology, a leading manufacturer of high-performance DRAM modules, NAND Flash products, and mobile accessories today announces the launch of the XPG Hunter DDR4 memory module. Geared toward PC enthusiasts and gamers, the XPG Hunter delivers all the benefits of DDR4 with remarkable performance and efficiency. It supports XMP 2.0 for easy overclocking and offers great stability, making it ideal for performance seekers - gaming to competitive benchmarking. It comes in U-DIMM and SO-DIMM variants to meet the needs of desktop and notebook users alike.

The XPG Hunter modules are made with high-quality chips selected through a strict filtering process. They are equipped with the finest PCBs and pass rigid reliability and compatibility tests to ensure longevity and rugged durability, which are vital for overclocking, gaming, and extreme benchmarking. The modules deliver high-speed performance of up to 3200 MHz and comes with capacities of 4 GB, 8 GB, 16 GB, or 32 GB to meet the needs of diverse users and budgets.

ChangXin Memory Technologies, a Chinese startup founded in 2016 that was formerly known as "Innotron Memory", now claims that it has become China's first and only domestic DRAM supplier. Following the announcement that it started production of domestic DRAM chips, ChangXin is now reportedly shipping its first DRAM wafers. With an output of around 20000 wafers per month, the company is currently building LPDDR4, DDR4 8Gbit chips using the "10-nanometer class" node, which is supposed to be 18 or 19 nm size in reality.

The company expects to double its wafer output to 40000 wafers per month sometime around Q2 of 2020 when additional expansion facilities will start production. ChangXin plans to soon open two more manufacturing facilities to start manufacturing even more wafers, in addition to its Fab 1. So far ChangXin has laid-out plans to start manufacturing DRAM technology based on stack capacitor, which is different from the usual trench capacitor technology few companies are pursuing.

CORSAIR, a world leader in PC gaming peripherals and enthusiast components, today announced a range of products including liquid CPU coolers, high-frequency DRAM, and efficient power supplies fully tested and validated for compatibility with the new 3rd Generation AMD Ryzen Threadripper high-end desktop processors. With the highest core and thread count on the HEDT market, combined with the lightning-fast PCI-Express 4.0 platform, AMD's most powerful desktop processor can create, composite, render, encode, and deliver with unprecedented multitasking power - and CORSAIR is ready with the widest range of guaranteed-compatible products to help get the best performance out of a new Ryzen Threadripper-based PC.

Today, Samsung's foundry division, dedicated to the manufacturing of DRAM chips, is facing challenges from mistakes that happened a few weeks ago. Those mistakes are in the form of contamination of the clean rooms, where all the tools necessary for the manufacturing of DRAM chips on 200 mm wafers got infected, and now Samsung is taking a multi-million dollar loss because the new wafers have to be scrapped.

Clean rooms are essential for the semiconductor manufacturing process, because they keep all the pollutants away from silicon, keeping silicon clean and ready for use. However, Samsung has not managed to keep a clean room for its DRAM manufacturing facility working with 200 mm wafers for 1x nm-class DRAM chips. The tools used for wafer processing have been contaminated and, therefore, the wafers themselves because of their interactions. Samsung has admitted that they have lost around "several billion South Korean won," resulting in millions of US dollars. The re-assuring thing that this will not significantly impact the DRAM market is that production is now going as planned, and the issue is sorted out, so we can hope this doesn't have any big impact on the DRAM prices.

Micron Technology, Inc., today announced a breakthrough in nonvolatile memory technology with the introduction of the world's fastest SSD, the Micron X100 SSD. The Micron X100 SSD is the first solution in a family of products from Micron targeting storage- and memory-intensive applications for the data center. These solutions will leverage the strengths of 3D XPoint technology and usher in a new tier in the memory-to-storage hierarchy with higher capacity and persistence than DRAM, along with higher endurance and performance than NAND.

"Micron's innovative X100 product brings the disruptive potential of 3D XPoint technology to the data center, driving breakthrough performance improvements for applications and enabling entirely new use cases," said Micron Executive Vice President and Chief Business Officer Sumit Sadana. "Micron is the only vertically-integrated provider of DRAM, NAND and 3D XPoint solutions in the world, and this product continues the evolution of our portfolio towards higher value solutions that accelerate artificial intelligence capabilities, drive faster data analytics and create new insights for our customers."

Samsung Electronics, a world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 12-gigabyte (GB) low-power double data rate 4X (LPDDR4X) UFS-based multichip package (uMCP). The announcement was made as part of the company's annual Samsung Tech Day at its Device Solutions' America headquarters in San Jose, California.

"Leveraging our leading-edge 24-gigabit (Gb) LPDDR4X chips, we can offer the highest mobile DRAM capacity of 12 GB not only for high-end smartphones but also for mid-range devices," said Sewon Chun, executive vice president of Memory Marketing at Samsung Electronics. "Samsung will continue to support our smartphone-manufacturing customers with on-time development of next-generation mobile memory solutions, bringing enhanced smartphone experiences to many more users around the globe."

Team Group launched its first 32 GB memory module, the Team Elite TED432G2400C1601. This is a dual-rank DIMM with eight 32 Gbit DRAM chips, with a rated clock-speed of DDR4-2400, and timings of 16-16-16-39, and module voltage of 1.20 V. The module features a simple black PCB of standard height (32 mm), and comes without any heatspreader or heatsink.

Team Group is also selling a 64 GB (2x 32 GB) dual-channel kit with two of these DIMMs, which bears the SKU TED464G2400C16DC01. To use these modules, you'll need either a 9th generation or 10th generation Intel Core processor, or 3rd generation AMD Ryzen, as 32 GB dual-rank DIMMs are unlikely to be supported by older processors. Team Group is backing these modules with lifetime warranty, and is likely to price the 32 GB single-module at USD $150, and the dual-channel kit at $300.

SK hynix Inc. today announced financial results for its third quarter 2019 ended on September 30, 2019. The consolidated third quarter revenue was 6.84 trillion won while the operating profit amounted to 473 billion won and the net income 495 billion won. Operating margin and net margin for the quarter was 7%.

The revenue in the third quarter increased by 6% quarter-over-quarter (QoQ) as demand began to pick up. However, the operating profit fell by 26% QoQ as DRAM unit cost reduction was not enough to offset the price drop. DRAM bit shipments increased by 23% QoQ as the Company actively responded to the new products in the mobile market and purchases from some data center customers also increased. DRAM prices remained weak during the quarter, leading to a 16% drop in the average selling price, with the decline smaller than the previous quarter.

SK hynix Inc. announced today that it has developed 1Znm 16Gb (Gigabits) DDR4 (Double Data Rate 4) DRAM. As 16Gb is the industry's largest density for a single chip, the total memory capacity per wafer is also the largest of the existing DRAMs. The productivity of this product has improved by about 27% compared to the previous generation, 1Y nm. It does not require highly expensive extreme ultraviolet (EUV) lithography, which gives it a competitive edge cost-wise.

The new 1Z nm DRAM also supports a data transfer rate of up to 3,200 Mbps, which is the fastest data processing speed in DDR4 interface. The Company significantly increased its power efficiency, successfully reducing power consumption by about 40% compared to modules of the same density made with 1Y nm 8 Gb DRAM.

CORSAIR, a world leader in PC gaming peripherals and enthusiast components, today announced a new kit of its award-winning CORSAIR VENGEANCE LPX DDR4 Memory, becoming the first commercially available high-frequency DRAM to break the 5,000 MHz barrier. This record-setting Micron-based memory is available now in a 2x 8 GB kit, reaching its full potential in select MSI X570 motherboards running 3rd Gen AMD Ryzen Desktop Processors.

VENGEANCE LPX once again sets a new milestone in the world of performance memory, continuing to deliver on its long-standing tradition of excellence thanks to the partnership between CORSAIR, MSI, and AMD. The new modules have been specifically designed and fully tested to achieve their record-breaking maximum frequency of 5,000 MHz on the Ryzen 3000 platform in MSI MEG X570 GODLIKE, MSI MEG X570 ACE, MSI MEG X570 UNIFY, and PRESTIGE X570 CREATION motherboards using their included automated overclocking utilities.

China's semiconductor industry is seeking independence in every sector of its industry, with an emphasis of homemade products for domestic use, especially government facilities, where usage of homegrown products is most desirable. According to the report of China Securities Journal, Chinese firm has started production of DRAM memory.

A company named ChangXin Memory Technology, founded in 2016 to boost domestic silicon production, on Monday started production of DRAM memory, aiming to directly replace the current supply of foreign memory from companies like Micron, SK Hynix and Samsung. Being build using 18 nm technology which ChangXin calls "10-nanometer class" node, this DRAM chip isn't too far behind offers from competitors it tries to replace. Micron, Samsung and SK Hynix use 12, 14, and 16 nm nodes for production of their DRAM chips, so Chinese efforts so far are very good. The company promises to produce around 120.000 wafers per month and plans to deliver first chips by the end of this year.

CORSAIR, a world leader in PC gaming peripherals and enthusiast components, today announced the availability of a new kit of its award-winning CORSAIR VENGEANCE LPX DDR4 Memory, setting a new record for commercially available high-frequency DRAM with clock speeds up to an incredible 4,866 MHz. This blazingly fast memory is now available in a 2x 8 GB kit, reaching its full potential in systems with new 3rd Gen AMD Ryzen Desktop Processors and X570 motherboards.

VENGEANCE LPX has long pushed the limits of performance memory, and continues that tradition today thanks to the partnership between CORSAIR and AMD. While fully compatible with most modern platforms, the new modules have been specifically designed and fully tested to achieve their record-breaking maximum frequency of 4,866 MHz on the Ryzen 3000 platform in ASUS ROG Crosshair VIII Formula, MSI MEG X570 GODLIKE, and MSI PRESTIGE X570 CREATION motherboards using their included automated overclocking utilities.

Samsung's B die has been widely known as a good, high performance variant of DRAM memory, loved by overclockers because of its ability to get to a high frequency with relatively low timings. However, B die has been discontinued and now Samsung started offering its replacement in form of the newly developed A die manufactured in 1z nm (1z class) lithography process. Despite the lack of technical details surrounding the new die type, Hardwareluxx has received a tip from its reader about new RAM offering that incorporates A die memory.

The M378A4G43AB2-CVF, as it is called in the listing, is a 32 GB, single dimm DDR4 RAM with operating speed of 2933 MHz and CL21-21-21 timings. This particular offer isn't something to be excited about as the frequency is good, but the timings are quite high for that speed. Given that we don't know where the A die is targeted at, we can speculate that its current aim is at mid-tier systems, where the mediocre performance is okay and the system isn't suffering (performance wise) because of it. Nonetheless this find is quite interesting as it gives first hints at what can we expect in therms of future A die DRAM offerings. Remember, it took some time for B die as well to get to the level of performance we have today, so it is entirely possible that A die will improve and try to aim for greater performance level than it currently has.

Alphacool today introduced two new products to their Aurora lineup. The first is a waterblock that has been especially designed for the RX5700 graphics card. The waterblock features a nickel-plated base and a Radeon RX illuminated logo. It has been designed with a thinner 1 mm heat conduction pads for better performance, and the full copper cooling block has also had a 1 mm shave in materials for better performance.

Concurrently, Alphacool also announced a cooling solution for your system's RAM. The Aurora Plexi can support up to four memory modules., and adds a stop to your watercooling system's flow that removes heat from your operating DRAM. The material is the usual nickel-plated copper, and the Aurora Plexi features compatibility with Alphacool's D-RAM cooling modules. The RX5700 Aurora waterblock will be available for €109.95, while the Aurora Plexi DDR cooling kit will go for €54.95.

Apacer, the leading manufacturer of industrial-grade memory, announces the release of the XR-DIMM. This rugged memory module is the first on the market to meet the exacting standards of the US RTCA DO-160G test, an aviation equipment certification that marks the XR-DIMM as resistant to high levels of vibration and therefore ideal for defense and aeronautical applications.

Since 2018, Apacer has been manufacturing DDR4 XR-DIMM modules with rugged stability in mind. Though previous models have been compliant with MIL-STD-810G, this new module is the first to be proven compliant with the US RTCA DO-160G standard, making it the ideal choice for manufacturers who need reliable operation through extreme vibration and shock.

Micron Technology, Inc. (Nasdaq: MU), today announced advancements in DRAM scaling, making Micron the first memory company to begin mass production of 16 Gb DDR4 products using 1z nm process technology

"Development and mass production of the industry's smallest feature size DRAM node are a testament to Micron's world-class engineering and manufacturing capabilities, especially at a time when DRAM scaling is becoming extremely complex," said Scott DeBoer, executive vice president of Technology Development for Micron Technology. "Being first to market strongly positions us to continue offering high-value solutions across a wide portfolio of end customer applications."

HyperX, the gaming division of Kingston Technology, Inc., today announced the release of FURY DDR4 RGB and a new look to the FURY DDR4 lineup. The new memory kits both offer automatic Plug N Play overclocking functionality. For DDR4 users that need fast, high-density memory, HyperX has added models up to 64 GB at 3466 MHz. The new FURY DDR4 and FURY DDR4 RGB are cost-effective, high-performance upgrades for Intel and AMD's latest platforms that feature Plug N Play, which enables automatic memory overclocking at standard DDR4 1.2 V settings. The new FURY models also feature Intel XMP-ready profiles optimized for Intel's latest platform.

The HyperX FURY DDR4 RGB comes equipped with an LED light bar with fluid RGB lighting effects and utilizes HyperX Infrared Sync, which allows the modules to remain synchronized. The memory is compatible with lighting control software from a range of motherboard vendors, including ASUS Aura Sync, Gigabyte RGB Fusion, and MSI Mystic Light Sync. Additional information about software and motherboard compatibility is available online at respective partner websites. FURY DDR4 RGB memory is also compatible with HyperX NGenuity software.

SK hynix Inc. announced today the launch of its "Gold S31" solid-state drive (SSD). Gold S31 (SATA III - first generation) is the first of the Company's new SuperCore series of consumer SSDs, an internal drive lineup based on SK hynix's core technology. With its speed and reliability, SK hynix's Gold S31 will be a perfect choice for all PC users, particularly for gamers, designers, and content creators. Gold S31 pushes the limits on high-performance SSDs, providing users the next level of speed with sequential read speeds up to 560 MB/s, as well as superior quality, reliability, and five-year warranty.

The 2.5-inch drive supports the SATA III interface based on 3D NAND Flash technology, and is now available in 1 TB, 500 GB and 250 GB capacities on Amazon US. All key components in Gold S31, from NAND Flash and built-in controller to DRAM and firmware, were designed and produced by SK hynix. The in-house components are built for robust performance and reliability.

At the 2019 Flash Memory Summit, Realtek announced a slew of new Flash memory controllers targeting a diversity of devices, spanning from USB flash drives to USB external SSDs, M.2/U.2 NVMe internal SSDs. Leading the pack is the RTS5771, the company's new flagship NVMe SSD controller that features a PCI-Express 4.0 x4 host interface, 8 NAND Flash channels with up to 1,200 MT/s speeds per channel, NVMe 1.3, and DRAM cache. This becomes the third PCIe gen 4.0-capable client-segment NVMe SSD controller after the Phison E16 and the Marvell 88SS132x.

The RTS5765DL is its cost-effective sibling, which has PCI-Express 3.0 x4 host interface, just 4 NAND Flash channels, and is DRAM-less, allowing manufacturers to design cost-effective SSDs. It still has 1,200 MT/s bandwidth per channel, so drives that implement it can offer sequential speeds similar to premium drives from the previous generation. The new RTL9210 is a bridge chip that converts USB 3.1 gen 2 (10 Gbps) to PCI-Express 3.0 x2, ideal for cost-effective external NVMe SSDs. The controller also features an integrated RGB LED logic, so drive designers can bling up their creations.