Ferroelectric Memory Co. (FMC) and Neumonda have formed a partnership to commercialize "DRAM+," a ferroelectric (FeRAM) memory architecture combining DRAM's speed with non-volatile data retention. The technology substitutes conventional capacitors with ferroelectric hafnium oxide (HfO₂) elements, allowing persistent storage without power while maintaining nanosecond access times. This hybrid technology addresses the performance gap between high-speed DRAM and storage-class memory like NAND flash. Unlike previous European DRAM ventures from Infineon and Qimonda that failed against commodity memory economics, FMC targets specialized applications valuing persistence and power efficiency. The HfO₂-based approach resolves limitations of previous FeRAM memory implementations using lead zirconate titanate (PZT) that couldn't scale beyond megabyte capacities.

Prototypes now demonstrate gigabit-range densities compatible with sub-10 nm fabrication of traditional DRAM made by Micron, Samsung, SK Hynix, and others. By eliminating refresh cycles, DRAM+ reduces static power consumption substantially compared to traditional one-transistor/one-capacitor DRAM cells. Primary applications include AI accelerators requiring persistent model weights, automotive ECUs with immediate startup requirements, and power-constrained medical implants. Neumonda will contribute its test platform suite Rhinoe, Octopus, and Raptor for electrical characterization and analytics at lower capital costs than standard semiconductor test equipment. No production timeline has been announced for commercial DRAM+ products.

Today, Intel unveiled research breakthroughs fueling its innovation pipeline for keeping Moore's Law on track to a trillion transistors on a package in the next decade. At IEEE International Electron Devices Meeting (IEDM) 2022, Intel researchers showcased advancements in 3D packaging technology with a new 10x improvement in density; novel materials for 2D transistor scaling beyond RibbonFET, including super-thin material just 3 atoms thick; new possibilities in energy efficiency and memory for higher-performing computing; and advancements for quantum computing.

"Seventy-five years since the invention of the transistor, innovation driving Moore's Law continues to address the world's exponentially increasing demand for computing. At IEDM 2022, Intel is showcasing both the forward-thinking and concrete research advancements needed to break through current and future barriers, deliver to this insatiable demand, and keep Moore's Law alive and well for years to come." -Gary Patton, Intel vice president and general manager of Components Research and Design Enablement

Toshiba Corporation today announced the prototype of a new FeRAM -Ferroelectric Random Access Memory-that redefines industry benchmarks for density and operating speed. The new chip realizes storage of 128-megabits and read and write speeds of 1.6-gigabytes a second, the most advanced combination of performance and density yet achieved. Full details of the new FeRAM will be presented this week at the International Solid-State Circuits Conference 2009 (ISSCC2009) in San Francisco, USA.