JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JESD209-3 LPDDR3 Low Power Memory Device Standard, designed to satisfy the performance and memory density demands of the latest generation of mobile devices such as smartphones, tablets, ultra-thin notebooks and similar connected devices on the newest, high-speed 4G networks.

LPDDR3 offers a higher data rate, improved bandwidth and power efficiency, and higher memory densities over its groundbreaking predecessor, LPDDR2. Developed by JEDEC's JC-42.6 Subcommittee for Low Power Memories, the LPDDR3 Low Power Memory Device Standard is available for free download from the JEDEC website: www.jedec.org/sites/default/files/docs/JESD209-3.pdf.

According to DRAMeXchange, a research division of TrendForce, the following report presents a forecast of six major DRAM and NAND Flash industry trends in 2012-2015.

Trend-1: Mainstream PC DRAM Specification DDR3 to Dominate Market Until 2014

DDR3 has been the mainstream PC DRAM specification since 2011, and DRAMeXchange expects it will remain so until 2014. Although JEDEC will officially announce standards for DDR4 in 2012, DRAMeXchange is conservative as to whether the new specification will follow the historical pattern set by DDR and DDR2 and hit the market in 2014-2015, as the marginal benefit to PC performance provided by DDR4 will be limited. However, Intel will still hold decisive influence over the matter.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the availability of a new standard for Wide I/O mobile DRAM: JESD229 Wide I/O Single Data Rate (SDR). Widely anticipated by the industry, Wide I/O mobile DRAM is a breakthrough technology that will meet industry demands for increased levels of integration as well as improved bandwidth, latency, power, weight and form factor; providing the ultimate in performance, energy efficiency and small size for smartphones, tablets, handheld gaming consoles and other mobile devices. JESD229 may be downloaded free of charge from the JEDEC website here.

Wide I/O mobile DRAM enables chip-level three dimensional (3D) stacking with Through Silicon Via (TSV) interconnects and memory chips directly stacked upon a System on a Chip (SoC). The standard defines features, functionalities, AC and DC characteristics, and ball/signal assignments. It is particularly well-suited for applications requiring extreme power efficiency and increased memory bandwidth (up to 17GBps). Examples include 3D Gaming, HD Video (1080p H264 video, pico projectors), and running multiple applications simultaneously. Wide I/O offers twice the bandwidth of the previous generation standard, LPDDR2, at the same rate of power consumption.

Elpida Memory, Inc., the world's third largest Dynamic Random Access Memory manufacturer, today announced that it has begun sample shipments of 4-gigabit Wide IO Mobile RAM and 4-gigabit DDR3 Mobile RAM (LPDDR3).

Wide IO Mobile RAM is a next-generation mobile memory chip that provides solutions to opposing needs for faster speed and lower power consumption. The rising performance of smartphones and tablet devices in recent years has led to demand for faster DRAMs (DRAMs with greater data transfer rates), but in turn this has generated concerns about increases in system power consumption.

The solution is that Wide IO Mobile RAM expands the I/O width by using x512-bit, a data width that is more than 10 times larger than the width for existing DRAMs, which enables a data transfer rate of 12.8 gigabytes per second (GB/s) per chip while operating at a low speed of 200MHz. The reduced DRAM speed results in approximately 50% less power consumption compared with DDR2 Mobile RAM (LPDDR2), currently the leading DRAM choice for mobile devices, configured at the same transfer rate.