Samsung Electronics, the world leader in advanced memory technology, today unveiled its new enterprise solid-state drive (SSD) featuring Zoned Namespace (ZNS) technology—the PM1731a. Leveraging ZNS, the SSD will maximize available user capacity and offer an extended lifespan in storage server, data center and cloud environments.

"Samsung's ZNS SSD reflects our commitment to introducing differentiated storage solutions that can substantially enhance the reliability and lifetime of server SSDs," said Sangyeun Cho, senior vice president of the Memory Software Development Team at Samsung Electronics. "We plan to leverage quad-level cell (QLC) NAND technology in our next-generation ZNS drives to enable higher thresholds for storage performance and capacity in the enterprise systems of tomorrow."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced its launch of the industry's highest performing 24G SAS (SAS-4) SSD - the PM1653. Based on the latest SAS interface, the new drive can support twice the speed of the previous 12G SAS-3 generation. The PM1653 is also the industry's first 24G SAS SSD made with sixth-generation (1xx-layer) V-NAND chips, enabling storage capacities from 800 GB to 30.72 TB for advanced enterprise server systems.

"As the leading provider of SAS storage for a decade, Samsung has been offering the most advanced and reliable enterprise solutions in full support of the critical workloads of global server OEMs, governments and financial institutions. Samsung enterprise solutions are also accredited by the U.S. National Institute of Standards and Technology for the most powerful data security," said Kwangil Park, senior vice president of the Memory Product Planning Team at Samsung Electronics. "Like we have done with the PM1653, Samsung will continue to collaborate with our customers to accommodate the ever-growing demand of the enterprise server market for the most uncompromising offerings available."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing its most advanced line of data center SSDs, the PM9A3 E1.S.

The new PM9A3 fully complies with the Open Compute Project (OCP) NVMe Cloud SSD Specification to satisfy the rigorous demands of enterprise workloads. Defined by leading data center providers including Facebook, the OCP Specification is a set of unified interoperable standards, enabling SSD vendors to work toward next-generation storage designs with much more effectiveness.

Samsung Electronics, the world leader in advanced memory technology, today unveiled the company's first consumer PCIe 4.0 NVMe solid state drive (SSD) - the Samsung SSD 980 PRO. The new 980 PRO is designed for professionals and consumers who want cutting-edge performance in their high-end PCs, workstations and game consoles.

"Over the years, Samsung has continuously challenged the limits of high-speed flash memory storage solutions," said Dr. Mike Mang, vice president of Memory Brand Product Biz at Samsung Electronics. "The new 980 PRO SSD reflects our continuing commitment to delivering exceptional products consumers have come to expect from Samsung."

Samsung's hotly anticipated 980 PRO M.2 NVMe flagship client-segment SSD is the company's first "PRO" branded SSD to feature TLC NAND flash memory, breaking from a unique tradition of using MLC (2 bits per cell) NAND flash. Product pages of the drive went live, and its specifications clearly state the use of "Samsung V-NAND 3-bit MLC," which is another way of saying TLC. "MLC" generally referred to as NAND flash memory that stores 2 bits per cell, even through the term "Multi-level" is amorphous.

The product page lists other juicy specs of Samsung's first M.2 NVMe client SSD that takes advantage of PCI-Express gen 4. The drive uses Samsung's in-house design "Elpis" controller, which uses NVMe 1.3 protocol over PCI-Express 4.0 x4, and an LPDDR4 DRAM cache. The 980 PRO comes in capacities of up to 1 TB, with up to 1 GB of DRAM cache. Samsung rates the 1 TB version as capable of up to 7000 MB/s sequential reads, up to 5000 MB/s sequential writes, and up to 1 million IOPS 4K random reads/writes at QD32. The use of TLC impacts endurance adversely in comparison to that of the drive's immediate predecessor, the 970 PRO, with the 1 TB 980 PRO warranty covering only up to 600 TBW, in comparison to 1200 TBW of the 970 PRO 1 TB, and the 500 GB 980 PRO offering just 300 TBW warranty coverage in comparison to 600 TBW of the 970 PRO 512 GB.

Samsung Electronics reported today KRW 52.97 trillion in consolidated revenue and KRW 8.15 trillion in operating profit for the second quarter ended June 30, 2020. Even as the spread of COVID-19 caused closures and slowdowns at stores and production sites around the world, the Company responded to challenges through its extensive global supply chain, while minimizing the impact of the pandemic by strengthening online sales channels and optimizing costs.

Quarterly operating profit rose 26 percent from the previous quarter and 23 percent from a year earlier, thanks to firm demand for memory chips and appliances, as well as a one-off gain at its Display Panel Business. A partial recovery in global demand since May also helped offset some COVID-19 effects, resulting in higher earnings than initially expected. Revenue in the quarter fell 4 percent from the previous quarter and 6 percent from a year earlier due to reduced sales of smartphones and other devices.

Samsung Electronics, the world leader in advanced memory technology, today announced plans to expand its NAND flash production capacity in Pyeongtaek, Korea, reinforcing the company's ability to meet demands from emerging technologies. Construction, which began this May, will pave the way for mass production of Samsung's cutting-edge V-NAND memory in the second half of 2021.

"The new investment reaffirms our commitment to sustain undisputed leadership in memory technologies, even in uncertain times," said Cheol Choi, executive vice president of Memory Global Sales & Marketing at Samsung Electronics. "We will continue to serve the market with the most optimized solutions available, while contributing to growth of the overall IT industry and the economy in general."

Samsung announced today in an OCP Virtual Summit keynote that it has developed a solid state drive (PM9A3 SSD) with a SNIA-based E1.S form factor and full PCIe Gen 4 support to harness the production efficiencies of the company's sixth-generation (1xx-layer), three-bit V-NAND. At the same time, the company said that it has introduced a comprehensive reference design for its E1.S-based storage system.

The keynote, in addition to announcing the PM9A3, highlighted a new approach to open source multi-industry storage collaboration that spotlighted the development of an open-source platform (OSP) fundamentally tied to cloud-scale infrastructure deployments. It was presented by Jongyoul Lee, senior vice president of Samsung's Memory Software Development Team at the Open Compute Project Virtual Global Summit.

Samsung Electronics today reported financial results for the first quarter ended March 31, 2020. Total revenue was KRW 55.33 trillion, a decrease of 7.6% from the previous quarter mainly due to weak seasonality for the Company's display business and Consumer Electronics Division and partially due to effects of COVID-19. From a year earlier, revenue rose 5.6% due to increasing demand for server and mobile components.

Operating profit was lower by KRW 0.7 trillion quarter-on-quarter to KRW 6.45 trillion, affected by the same factors that weighed on revenue with a corresponding decrease in operating margin, even though memory earnings were higher. Compared with a year earlier, operating profit increased by KRW 0.2 trillion with an improved product mix in the mobile business and additional diversification of the Company's customer base in mobile OLED.

In the quarter, foreign exchange movements had little impact on the overall operating profit as the positive effects from a stronger U.S. dollar and euro against the won - felt mainly in the component business - were offset by weakness in currencies in major emerging markets.

Samsung Electronics is reportedly developing its 7th generation V-NAND memory with ultra-high 3D stacking technology. The first model will feature at least 160 layers, subsequent models will feature more. In early signs of the company not wanting to yield the technological initiative to China's YMTC, the first 160-layer V-NAND by Samsung is slated to come out roughly around the time YMTC's 128-layer 3D NAND flash hits mass production, towards the end of 2020.

At the heart of the ultra-high 3D stack is Samsung's proprietary Double Stack technology. The double-stack technology creates electron holes at two separate times for current to go through circuits. The current-generation single-stack chips creates these holes once throughout the stack per cycle. The 160-layer NAND flash is expected to herald a 67% increase in densities per package over the 96-layer chips in the market. Densities could also be increased by other means such as switching to newer semiconductor fabrication nodes, and PLC (5 bits per cell), which is currently being developed by KIOXIA.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 512-gigabyte (GB) eUFS (embedded Universal Flash Storage) 3.1 for use in flagship smartphones. Delivering three times the write speed of the previous 512 GB eUFS 3.0 mobile memory, Samsung's new eUFS 3.1 breaks the 1 GB/s performance threshold in smartphone storage.

"With our introduction of the fastest mobile storage, smartphone users will no longer have to worry about the bottleneck they face with conventional storage cards," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. "The new eUFS 3.1 reflects our continuing commitment to supporting the rapidly increasing demands from global smartphone makers this year."

It's finally here: a high-end PCI-Express gen 4.0 M.2 NVMe SSD by Samsung, made end-to-end by homebrew components. When it releases sometime later this year with a possible technical reveal in Q2, the SSD 980 will be possibly the only client-segment M.2 NVMe PCIe gen 4 SSD to feature MLC (2 bits per cell) NAND flash memory. This also means that the highest capacity on offer is just 1 TB. The company also put out sequential transfer rates: up to 6,500 MB/s reads, with up to 5,000 MB/s writes. The biggest payoffs of MLC would be sustained write performance and endurance (in its capacity class, compared to TLC and QLC).

Next up, is the Portable SSD T7 Touch, a successor to the T5 from 2017. This drive comes in an in-built fingerprint reader, letting you secure its data with your fingerprints. The drive is also a much needed update to the T5, which still uses 64-layer TLC NAND; and possibly uses the latest generation 96-layer V-NAND. The drive is built with an aluminium case that's drop-resistant up to 2 m. A single USB 3.2 connection handles power and data. The drive includes type-C to type-C and type-C to type-A cables, and will be compatible not just with PCs, but also Samsung Galaxy smartphones and tablets.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has brought the latest software innovations to the company's most cutting-edge PCIe Gen4 solid state drive (SSD) series, opening up a new paradigm in SSD performance.

"We are combining breakthrough speeds and capacities with revolutionary software solutions as we accelerate expansion in the premium SSD market," said Kye Hyun Kyung, executive vice president of Memory Solution Product & Development at Samsung Electronics. "We plan to introduce additional innovation led by our most advanced (sixth-generation) V-NAND in helping to trigger a lot more growth in the global IT market."

Samsung Electronics, Ltd., has taken its leadership position in the memory market a step further today by announcing support of the Samsung PM1733 PCIe Gen4 Solid State Drive (SSD) and high density RDIMM and LRDIMM dynamic random access memory (DRAM) for the AMD EPYC 7002 Generation Processors. AMD launched the 2nd Gen AMD EPYC processor in San Francisco yesterday.

"AMD has listened to the needs of its customers in developing the 2nd Gen AMD EPYC processors and has worked closely with us to integrate the best of our cutting-edge memory and storage products," said Jinman Han, senior VP of Memory Product Planning, Samsung Electronics. "With these new datacenter processors, AMD is providing customers with a processor that enables a new standard for the modern datacenter."

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing 250-gigabyte (GB) SATA solid state drive (SSD) that integrates the company's sixth-generation (1xx-layer) 256-gigabit (Gb) three-bit V-NAND for global PC OEMs. By launching a new generation of V-NAND in just 13 months, Samsung has reduced the mass production cycle by four months while securing the industry's highest performance, power efficiency and manufacturing productivity.

"By bringing cutting-edge 3D memory technology to volume production, we are able to introduce timely memory lineups that significantly raise the bar for speed and power efficiency," said Kye Hyun Kyung, executive vice president of Solution Product & Development at Samsung Electronics. "With faster development cycles for next-generation V-NAND products, we plan to rapidly expand the markets for our high-speed, high-capacity 512 Gb V-NAND-based solutions."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) 3.0 for next-generation mobile devices. In line with the latest eUFS 3.0 specification, the new Samsung memory delivers twice the speed of the previous eUFS storage (eUFS 2.1), allowing mobile memory to support seamless user experiences in future smartphones with ultra-large high-resolution screens.

"Beginning mass production of our eUFS 3.0 lineup gives us a great advantage in the next-generation mobile market to which we are bringing a memory read speed that was before only available on ultra-slim laptops," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. "As we expand our eUFS 3.0 offerings, including a 1-Terabyte (TB) version later this year, we expect to play a major role in accelerating momentum within the premium mobile market."

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first one-terabyte (TB) embedded Universal Flash Storage (eUFS) 2.1, for use in next-generation mobile applications. Just four years after introducing the first UFS solution, the 128-gigabyte (GB) eUFS, Samsung has passed the much-anticipated terabyte threshold in smartphone storage. Smartphone enthusiasts will soon be able to enjoy storage capacity comparable to a premium notebook PC, without having to pair their phones with additional memory cards.

"The 1 TB eUFS is expected to play a critical role in bringing a more notebook-like user experience to the next generation of mobile devices," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. "What's more, Samsung is committed to assuring the most reliable supply chain and adequate production quantities to support the timely launches of upcoming flagship smartphones in accelerating growth of the global mobile market."

Samsung today introduced the Samsung 970 EVO Plus, the newest enhancement in its Non-Volatile Memory Express (NVMe) SSD portfolio. With industry-leading performance and up to two terabytes in capacity, Samsung's 970 EVO Plus sets a new bar for high-performance storage, enabling IT professionals, tech enthusiasts and gamers to handle intensive workloads on PCs and workstations with more ease.

"Since introducing the first NVMe SSDs to the consumer market in 2015, Samsung has continued to challenge technical barriers in SSD design and performance," said Dr. Mike Mang, vice president of Brand Product Marketing, Memory Business at Samsung Electronics. "The new 970 EVO Plus powered by Samsung's latest fifth-generation V-NAND technology will now offer unrivaled performance in its class when taking on demanding tasks like 4K content editing, 3D modeling and simulation as well as heavy gaming."

Samsung Electronics, a world leader in advanced semiconductor technology, today announced several groundbreaking additions to its comprehensive semiconductor ecosystem that encompass next-generation technologies in foundry as well as NAND flash, SSD (solid state drive) and DRAM. Together, these developments mark a giant step forward for Samsung's semiconductor business.

"Samsung's technology leadership and product breadth are unparalleled," said JS Choi, President, Samsung Semiconductor, Inc. "Bringing 7 nm EUV into production is an incredible achievement. Also, the announcements of SmartSSD and 256GB 3DS RDIMM represent performance and capacity breakthroughs that will continue to push compute boundaries. Together, these additions to Samsung's comprehensive technology ecosystem will power the next generation of datacenters, high-performance computing (HPC), enterprise, artificial intelligence (AI) and emerging applications."

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 4-bit (QLC, quad-level cell) 4-terabyte (TB) SATA solid-state drive (SSD) for consumers.

Based on 1-terabit (Tb) V-NAND with outstanding performance equivalent to the company's 3-bit design, Samsung's QLC SSD is expected to bring a new level of efficiency to consumer SSDs.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing its fifth-generation V-NAND memory chips with the fastest data transfers now available. In the industry's first use of the 'Toggle DDR 4.0' interface, the speed for transmitting data between storage and memory over Samsung's new 256-gigabit (Gb) V-NAND has reached 1.4-gigabits per second (Gbps), a 40-percent increase from its 64-layer predecessor.

The energy efficiency of Samsung's new V-NAND remains comparable to that of the 64-layer chip, primarily because the operating voltage has been reduced from 1.8 volts to 1.2 volts. The new V-NAND also has the fastest data write speed to date at 500-microseconds (μs), which represents about a 30-percent improvement over the write speed of the previous generation, while the response time to read-signals has been significantly reduced to 50μs.

Samsung Electronics, the world leader in advanced memory technology, today announced that it is being recognized for its environmental reliability by receiving the industry's first Environmental Product Declaration (EPD) certificate in Korea with its 512Gb 64-layer 3bit V-NAND and 860 EVO 4TB SSD.

The Environmental Product Declaration is a national certification system in Korea which recognizes a product's performance according to seven key environmental metrics including carbon footprint, resource footprint, ozone depletion, acidification, eutrophication, photochemical smog, and water footprint.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has launched the industry's highest capacity NVMe solid state drive (SSD) based on the incredibly small Next-generation Small Form Factor (NGSFF) - an eight-terabyte (TB) NF1 SSD. The new 8TB NVMe NF1 SSD has been optimized for data-intensive analytics and virtualization applications in next-generation data centers and enterprise server systems.

"By introducing the first NF1 NVMe SSD, Samsung is taking the investment efficiency in data centers to new heights," said Sewon Chun, senior vice president of Memory Marketing at Samsung Electronics. "We will continue to lead the trend toward enabling ultra-high density data centers and enterprise systems by delivering storage solutions with unparalleled performance and density levels."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it is rolling out its PM883, the highest density datacenter SATA drive, at eight terabytes (TB). Samsung's new solid state drive (SSD) offering is the industry's first datacenter SATA drive to incorporate LPDDR4 DRAM modules and features a 6.0-gigabits-per-second (Gbps) 2.5-inch SATA interface.

The high-performance PM883 is expected to accelerate a transition in many existing enterprise datacenters to SATA-formatted SSD designs, with improved economies of scale through the use of advanced-generation V-NAND technology at higher densities.

"We are thrilled to have the opportunity to enable a high level of storage density with low power consumption, which thanks to the efficiency of our 64-layer V-NAND-based technology, allows us to double the capacity of current SATA storage," said Jim Elliott, corporate senior vice president, memory sales and marketing, Samsung Semiconductor, Inc. "Our expanded lineup for the PM883 will offer up to 8TB to allow optimal use in existing enterprise and cloud storage systems."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's largest capacity Serial Attached SCSI (SAS) solid state drive (SSD) - the PM1643 - for use in next-generation enterprise storage systems. Leveraging Samsung's latest V-NAND technology with 64-layer, 3-bit 512-gigabit (Gb) chips, the 30.72 terabyte (TB) drive delivers twice the capacity and performance of the previous 15.36 TB high-capacity lineup introduced in March 2016.

This breakthrough was made possible by combining 32 of the new 1TB NAND flash packages, each comprised of 16 stacked layers of 512 Gb V-NAND chips. These super-dense 1 TB packages allow for approximately 5,700 5-gigabyte (GB), full HD movie files to be stored within a mere 2.5-inch storage device.