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IRDM M.2 SSD 512 GB (E12S + YMTC BCT1B)

512 GB
Capacity
Phison E12S
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The IRDM M.2 SSD is a solid-state drive in the M.2 2280 form factor, launched in 2021. It is available in capacities ranging from 512 GB to 1 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the IRDM M.2 SSD interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12S-32 from Phison. IRDM has installed 64-layer TLC NAND flash on the M.2 SSD, the flash chips are made by YMTC. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The M.2 SSD is rated for sequential read speeds of up to 3,200 MB/s and 2,000 MB/s write; random IOPS reach up to 295K for reads and 500K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. IRDM guarantees an endurance rating of 300 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 512 GB 1 TB
Hardware Versions:
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: 2021
Part Number: IR-SSDPR-P34B-512-80
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5012-E12S-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM

NAND Flash

Manufacturer: YMTC
Name: Xtacking 1.0
Type: TLC
Technology: 64-layer
Speed: 800 MT/s
Capacity: 4 chips @ 1 Tbit
ONFI: 4.0
Topology: Charge Trap
Process: 40 nm
Die Size: 58 mm²
(4.4 Gbit/mm²)
Dies per Chip: 4 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 73 per NAND String
87.7% Vertical Efficiency
Read Time (tR): 74 µs
Program Time (tProg): 760 µs
Block Erase Time (tBERS): 9.0 ms
Die Read Speed: 432 MB/s
Die Write Speed: 42 MB/s
Endurance:
(up to)
1500 P/E Cycles
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1006 Blocks

DRAM Cache

Type: Unknown
Capacity: 256 MB
(1x 256 MB)

Performance

Sequential Read: 3,200 MB/s
Sequential Write: 2,000 MB/s
Random Read: 295,000 IOPS
Random Write: 500,000 IOPS
Endurance: 300 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. The difference between this revision and the E12 revision is that this has a nichel IHS to improve the temperature, a smaller size, smaller node (12nm TSMC FinFET) and this works with less DRAM capacity.

NAND Die:

Array Eficiency of over 90%
The 64-Word Layers NAND Die from YMTC actuall has 73-Gate Layers, being 64 for storage, 5 DWL (Dummy Word Layers) alongside 4 select Gates (1 SG and 3 Drain SGs)

PS: Bit-line pitch is 40nm
NAND Die Endurance: From 1500 to 3000 P.E.C.
NAND Flash Bus: Up to 800 MT/s
Page Read in SLC Mode: 34µs
Page Write in SLC Mode: 34µs
Block Erase in SLC Mode: 3.3ms

Jun 2nd, 2024 08:07 EDT change timezone

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