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Sabrent Rocket 4 Plus 8 TB (Kioxia BiCS5)

8 TB
Capacity
Phison E18
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Front
Back
Tweaktown
Back
PCB Front
Tom's Hardware
PCB Front
PCB Back
Tom's Hardware
PCB Back
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
The Sabrent Rocket 4 Plus is a solid-state drive in the M.2 2280 form factor, launched on December 28th, 2021. It is only available in the 8 TB capacity listed on this page. With the rest of the system, the Sabrent Rocket 4 Plus interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5018-E18-41 from Phison, a DRAM cache chip is available. Sabrent has installed 112-layer TLC NAND flash on the Rocket 4 Plus, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 880 GB, once it is full, writes complete at 1015 MB/s. Copying data out of the SLC cache (folding) completes at 663 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The Rocket 4 Plus is rated for sequential read speeds of up to 7,400 MB/s and 6,600 MB/s write; random IOPS reach up to 650K for reads and 1000K for writes.
At its launch, the SSD was priced at 1999 USD. The warranty length is set to five years, which is an excellent warranty period. Sabrent guarantees an endurance rating of 6000 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 8 TB (8000 GB)
Overprovisioning: 741.4 GB / 10.0 %
Production: Active
Released: Dec 28th, 2021
Price at Launch: 1999 USD
Part Number: SB-RKT4P-8TB
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 0.80 W (Idle)
5.7 W (Avg)
8.7 W (Max)

Controller

Manufacturer: Phison
Name: PS5018-E18-41
Architecture: ARM 32-bit Cortex-R5
Core Count: 5-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 1,600 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS5
Part Number: TA8IG85AYV
Type: TLC
Technology: 112-layer
Speed: 1200 MT/s
Capacity: 8 chips @ 8 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 8 dies @ 1 Tbit
Planes per Die: 2
Word Lines: 128 per NAND String
87.5% Vertical Efficiency
Read Time (tR): 56 µs
Endurance:
(up to)		 3000 P/E Cycles
(100000 in SLC Mode)
Page Size: 16 KB
Block Size: 1344 Pages

DRAM Cache

Type: DDR4-2666 CL19
Name: SK Hynix H5AN8G6NCJR-VKC
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 7,400 MB/s
Sequential Write: 6,600 MB/s
Random Read: 650,000 IOPS
Random Write: 1,000,000 IOPS
Endurance: 6000 TBW
Warranty: 5 Years
MTBF: 1.6 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 880 GB
(dynamic only)
Speed when Cache Exhausted: approx. 1015 MB/s
Cache Folding Speed: 663 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Drive:

Kioxia originally demonstrated the technical specifications for BiCS5 at ISSCC 2019. The original design was a 128-layer quad-plane design with a CMOS-under-Array (CuA) configuration. However, the 1Tb BiCS5 in this SSD is a 112-layer dual-plane design without CuA. These compromises suggest a bigger focus on production efficiency (density and yield), which explains the 1Tb dies used here.
5-year warranty, but only 1-year without registration

Controller:

3 main cores using Cortex-R5 clocked at 1000 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. (200 - 300 MHz)

NAND Die:

Typ. Endurance: 1700 ~ 3000 P.E.C.
Typ. pSLC Endurance: 50.000 ~ 100.000 P.E.C.
Jun 2nd, 2024 08:10 EDT change timezone

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