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Samsung 845DC Pro 400 GB

400 GB
Capacity
Samsung MDX
Controller
MLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Front
PCB Front
Anandtech
PCB Front
DRAM
Anandtech
DRAM
Flash
The SSD Review
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 845DC Pro was a solid-state drive in the 2.5" form factor, launched in June 2014, that is no longer in production. It was available in capacities ranging from 400 GB to 800 GB. This page reports specifications for the 400 GB variant. With the rest of the system, the Samsung 845DC Pro interfaces using a SATA 6 Gbps connection. The SSD controller is the MDX (S4LN021X01) from Samsung, a DRAM cache chip is available. Samsung has installed 24-layer MLC NAND flash on the 845DC Pro, the flash chips are made by Samsung. The 845DC Pro is rated for sequential read speeds of up to 530 MB/s and 460 MB/s write; random IO reaches 92K IOPS for read and 50K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 7300 TBW, an extremely high value, making this drive fit for demanding enterprise applications.

Solid-State-Drive

Capacity: 400 GB
Variants: 400 GB 800 GB
Overprovisioning: 139.5 GB / 37.4 %
Production: End-of-life
Released: Jun 2014
Part Number: MZ-7WD400
Market: Enterprise

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 1.0 W (Idle)
2.6 W (Avg)
4.8 W (Max)

Controller

Manufacturer: Samsung
Name: MDX (S4LN021X01)
Architecture: ARM 32-bit Cortex R4
Core Count: Triple-Core
Frequency: 300 MHz
Foundry: Samsung
Process: 32 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V1
Part Number: K9PKGY8S7M-CCK0
Type: MLC
Technology: 24-layer
Speed: 533 MT/s .. 667 MT/s
Capacity: 4 chips @ 1 Tbit
Toggle: 2.0
Topology: Charge Trap
Die Size: 133 mm²
(1.0 Gbit/mm²)
Dies per Chip: 8 dies @ 128 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 29 per NAND String
82.8% Vertical Efficiency
Program Time (tProg): 330 µs
Die Write Speed: 50 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(35000 in SLC Mode)
Page Size: 8 KB
Block Size: 384 Pages
Plane Size: 5464 Blocks

DRAM Cache

Type: LPDDR2-1066
Name: Samsung K4P4G324EQ-FGC2
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx32

Performance

Sequential Read: 530 MB/s
Sequential Write: 460 MB/s
Random Read: 92,000 IOPS
Random Write: 50,000 IOPS
Endurance: 7300 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 10.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

Controller might have support for 8 Chip enbales commands per channel.

NAND Die:

Data Speed bus: 667Mbps@Single-Die, 533Mbps@8-Die-stack
Program Throughput for Multiple Stacked Dies: 36 MB/s (450 µs)
2 Dummy Word lines
2 Select Word Lines
Jun 2nd, 2024 07:26 EDT change timezone

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