TrendForce expects that memory suppliers will continue their strategy of scaling back production of both DRAM and NAND Flash in 2024, with the cutback being particularly pronounced in the financially struggling NAND Flash sector. Market demand visibility for consumer electronic is projected to remain uncertain in 1H24. Additionally, capital expenditure for general-purpose servers is expected to be weakened due to competition from AI servers. Considering the low baseline set in 2023 and the current low pricing for some memory products, TrendForce anticipates YoY bit demand growth rates for DRAM and NAND Flash to be 13% and 16%, respectively. Nonetheless, achieving effective inventory reduction and restoring supply-demand balance next year will largely hinge on suppliers' ability to exercise restraint in their production capacities. If managed effectively, this could open up an opportunity for a rebound in average memory prices.

PC: The annual growth rate for average DRAM capacity is projected at approximately 12.4%, driven mainly by Intel's new Meteor Lake CPUs coming into mass production in 2024. This platform's DDR5 and LPDDR5 exclusivity will likely make DDR5 the new mainstream, surpassing DDR4 in the latter half of 2024. The growth rate in PC client SSDs will not be as robust as that of PC DRAM, with just an estimated growth of 8-10%. As consumer behavior increasingly shifts toward cloud-based solutions, the demand for laptops with large storage capacities is decreasing. Even though 1 TB models are becoming more available, 512 GB remains the predominant storage option. Furthermore, memory suppliers are maintaining price stability by significantly reducing production. Should prices hit rock bottom and subsequently rebound, PC OEMs are expected to face elevated SSD costs. This, when combined with Windows increasing its licensing fees for storage capacities at and above 1 TB, is likely to put a damper on further growth in average storage capacities.

TrendForce reports that rising demand for AI servers has driven growth in HBM shipments. Combined with the wave of inventory buildup for DDR5 on the client side, the second quarter saw all three major DRAM suppliers experience shipment growth. Q2 revenue for the DRAM industry reached approximately US$11.43 billion, marking a 20.4% QoQ increase and halting a decline that persisted for three consecutive quarters. Among suppliers, SK hynix saw a significant quarterly growth of over 35% in shipments. The company's shipments of DDR5 and HBM, both of which have higher ASP, increased significantly. As a result, SK hynix's ASP grew counter-cyclically by 7-9%, driving its Q2 revenue to increase by nearly 50%. With revenue reaching US$3.44 billion, SK hynix claimed the second spot in the industry, leading growth in the sector.

Samsung, with its DDR5 process still at 1Ynm and limited shipments in the second quarter, experienced a drop in its ASP by around 7-9%. However, benefitting from inventory buildup by module houses and increased demand for AI server setups, Samsung saw a slight increase in shipments. This led to an 8.6% QoQ increase in Q2 revenue, reaching US$4.53 billion, securing them the top position. Micron, ranking third, was a bit late in HBM development. However, DDR5 shipments held a significant proportion, keeping their ASP relatively stable. Boosted by shipments, its revenue was around US$2.95 billion, a quarterly increase of 15.7%. Both companies saw a reduction in their market share.

SK hynix Inc. announced today that it successfully developed HBM3E, the next-generation of the highest-specification DRAM for AI applications currently available, and said a customer's evaluation of samples is underway. The company said that the successful development of HBM3E, the extended version of HBM3 which delivers the world's best specifications, comes on top of its experience as the industry's sole mass provider of HBM3. With its experience as the supplier of the industry's largest volume of HBM products and the mass-production readiness level, SK hynix plans to mass produce HBM3E from the first half of next year and solidify its unrivaled leadership in AI memory market.

According to the company, the latest product not only meets the industry's highest standards of speed, the key specification for AI memory products, but all categories including capacity, heat dissipation and user-friendliness. In terms of speed, the HBM3E can process data up to 1.15 terabytes a second, which is equivalent to processing more than 230 Full-HD movies of 5 GB-size each in a second.

SK hynix Inc. (or "the company", www.skhynix.com) announced today that it has begun supplying the industry's first 24-gigabyte (GB) Low Power Double Data Rate 5X (LPDDR5X) mobile DRAM package to its customers, following the mass production of LPDDR5X in November 2022. SK hynix, in January, developed LPDDR5T, which is an upgraded product of LPDDR5X prior to the development of the 8th generation LPDDR6, and is currently processing customer validation.

"The company integrated the High-K Metal Gate (HKMG) process in the 24 GB LPDDR5X package, enabling the product to deliver outstanding power efficiency and performance," said SK hynix. "The addition of the 24 GB package to our mobile DRAM product portfolio has given us a more flexibility in accommodating customers' needs."

TrendForce highlights in its latest report that memory suppliers are boosting their production capacity in response to escalating orders from NVIDIA and CSPs for their in-house designed chips. These efforts include the expansion of TSV production lines to increase HBM output. Forecasts based on current production plans from suppliers indicate a remarkable 105% annual increase in HBM bit supply by 2024. However, due to the time required for TSV expansion, which encompasses equipment delivery and testing (9 to 12 months), the majority of HBM capacity is expected to materialize by 2Q24.

TrendForce analysis indicates that 2023 to 2024 will be pivotal years for AI development, triggering substantial demand for AI Training chips and thereby boosting HBM utilization. However, as the focus pivots to Inference, the annual growth rate for AI Training chips and HBM is expected to taper off slightly. The imminent boom in HBM production has presented suppliers with a difficult situation: they will need to strike a balance between meeting customer demand to expand market share and avoiding a surplus due to overproduction. Another concern is the potential risk of overbooking, as buyers, anticipating an HBM shortage, might inflate their demand.

During yesterday's HBM3 Gen2 memory products yesterday, Micron also shared an updated roadmap with select media and partners. The most interesting details on that roadmap were updates to DRAM and GDDR memory products, with increases in capacity coming for both types of memory. Micron is aiming to launch 32 Gbit or 4 GB DDR5 memory ICs somewhere in the beginning of 2024, which means we can look forward to 32 GB single sided DIMMs with a single DRAM die per memory IC. This should, in theory at least, enable cheaper 32 GB DIMMs, but as always, it's unlikely that the cost saving will be passed on to the end customer. As far as server customers goes, Micron is planning 128 GB DIMMs for 2024, followed by 192 GB DIMMs in 2025 and 256 GB DIMMs in 2026.

When it comes to GDDR, Micron will be launching JEDEC standard GDDR7 memory with 16 and 24 Gbit dies, or 2 and 3 GB capacity, the latter could be the highest capacity GDDR7 memory IC on the market and could see some interesting graphics card configurations. Micron is promising speeds of up to 32 Gbps per pin or 128 GB/s per chip, which is a big jump up from its current best GDDR6X memory which tops out at 24 Gbps per pin or 96 GB/s per chip. GDDR7 differs from Micron's proprietary GDDR6X by using PAM-3 rather than PAM-4 signalling, although this is simply something that the likes of AMD and NVIDIA would have to design their GPUs around. Micron doesn't appear to have any plans for GDDR7X at this point in time. The company is also working on several new iterations of HBM memory over the coming years, with the company expecting to hit 2 TB/s sometime in 2026 or later.

Earlier today, Samsung released its Q2 results, which were a mixed bag with many business units underperforming. However, none were doing as poorly as Samsung's memory business which made a loss of 4.36 trillion Won or around US$3.4 billion. Although not mentioned in the financial report, Reuters are reporting that Samsung is looking to cut production of NAND and DRAM further, as the publication is pointing out that Samsung's chipset business as a whole lost a staggering 8.9 trillion Won or US$7 billion. That said, the loss wasn't quite as bad as in the first quarter of the year and Samsung is expected to cut the loss in half for Q3.

In a statement to Reuters, Samsung said "Production cuts across the industry are likely to continue in the second half, and demand is expected to gradually recover as clients continue to destock their (chip) inventory." This suggests that the expected recovery isn't going to happen as soon as the DRAM and NAND manufacturers expected, as there simply isn't enough demand for either product. SK Hynix has already announced that it's cutting production a further five to 10 percent for NAND, but the company doesn't appear to have had quite as big losses as Samsung. For the time being, this is good news for consumers, as RAM and SSD pricing is about as low as it has ever been. However, with production cuts from all the three major manufacturers of DRAM and NAND, prices will most likely start going up soon, especially as Samsung is said to have depleted most of its inventories.

Samsung Electronics today reported financial results for the second quarter ended June 30, 2023. The Company posted KRW 60.01 trillion in consolidated revenue, a 6% decline from the previous quarter, mainly due to a decline in smartphone shipments despite a slight recovery in revenue of the DS (Device Solutions) Division. Operating profit rose sequentially to KRW 0.67 trillion as the DS Division posted a narrower loss, while Samsung Display Corporation (SDC) and the Digital Appliances Business saw improved profitability.

The Memory Business saw results improve from the previous quarter as its focus on High Bandwidth Memory (HBM) and DDR5 products in anticipation of robust demand for AI applications led to higher-than-guided DRAM shipments. System semiconductors posted a decline in profit due to lower utilization rates on weak demand from major applications.

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced its participation at Flash Memory Summit 2023, taking place in person in Santa Clara, California, on August 8-10. CEO, Andy Hsu, will deliver a keynote address titled "New Architectures which will Drive Future 3D NAND and 3D DRAM Solutions" on August 9th at 11:40 a.m. Pacific Time.

Earlier this year, Neo Semiconductor announced the launch of its ground-breaking technology, 3D X-DRAM. This development is the world's first 3D NAND-like DRAM cell array that is targeted to solve DRAM's capacity bottleneck and replace the entire 2D DRAM market. 3D X-DRAM can be manufactured using the existing 3D NAND flash memory process with minor changes, significantly reducing the time and cost spent developing a new 3D process. During the keynote, Mr. Hsu will reveal the 3D X-DRAM process flow and technical details.

Samsung on Wednesday announced mass-production of the world's first next-generation GDDR7 memory chips, and Ryan Smith from AnandTech scored a few technical details from the company. Apparently, the company's first production version of GDDR7 memory is built on the same D1z silicon foundry node as its 24 Gbps GDDR6 memory chip—the fastest GDDR6 chip in production. D1z is a 10 nm class foundry node that utilizes EUV lithography.

Smith also scored some electrical specs. The first-gen GDDR7 memory chip offers a data-rate of 32 Gbps at a DRAM voltage of 1.2 V, compared to the 1.35 V that some of the higher speed GDDR6 chips operate at. While the pJpb (pico-Joules per bit) is 7% higher than the current generation in absolute terms, for the 32 Gbps data-rate on offer, it is 20% lower compared to that of the 24 Gbps GDDR6 chip. Put simply, GDDR7 is 20% more energy efficient. Smith remarks that this energy-efficiency gain is purely architectural, and isn't a from any refinements to the D1z node. GDDR7 uses PAM3 signaling compared to the NRZ signaling of conventional GDDR6, and the PAM4 signalling of the GDDR6X non-JEDEC standard that NVIDIA co-developed with Micron Technology.

Samsung Electronics, a world leader in advanced semiconductor technology, today announced that it has completed development of the industry's first Graphics Double Data Rate 7 (GDDR7) DRAM. It will first be installed in next-generation systems of key customers for verification this year, driving future growth of the graphics market and further consolidating Samsung's technological leadership in the field.

Following Samsung's development of the industry's first 24 Gbps GDDR6 DRAM in 2022, the company's 16-gigabit (Gb) GDDR7 offering will deliver the industry's highest speed yet. Innovations in integrated circuit (IC) design and packaging provide added stability despite high-speed operations. "Our GDDR7 DRAM will help elevate user experiences in areas that require outstanding graphics performance, such as workstations, PCs and game consoles, and is expected to expand into future applications such as AI, high-performance computing (HPC) and automotive vehicles," said Yongcheol Bae, Executive Vice President of Memory Product Planning Team at Samsung Electronics. "The next-generation graphics DRAM will be brought to market in line with industry demand and we plan on continuing our leadership in the space."

Scientists at the Tokyo Institute of Technology have developed a new type of stacked or 3D DRAM that the researchers call Bumpless Build Cube 3D or BBCube 3D, which relies on Through Silicon Vias or TSVs to connect the DRAM dies. This is a different approach to HBM which relies on micro bumps to connect the layers together and the Japanese scientists are saying that their bumpless wafer-on-wafer solution should allow not only for an easier manufacturing process, but more importantly, improved cooling, as the TSVs can channel the heat from the DRAM dies down into whatever substrate the BBCube 3D stack is finally mounted onto.

If that wasn't enough, the researchers believe that BBCube 3D will be able to deliver higher speeds than HBM courtesy of a combination of the TSVs being relatively short and "high-density signal parallelism". BBCube 3D is expected to deliver up to a 32 fold increase in bandwidth compared to DDR5 memory and a four fold increase compared to HBM2E memory, while at the same time, drawing less power. The research paper goes into a lot more details for those interested at taking a closer look at this potentially revolutionary shift in DRAM assembly. However, the question that remains unanswered is if this will end up as a real world product some time in the near future, which is all based on how manufacturable BBCube 3D memory will be.

TrendForce reports that continued production cuts by DRAM suppliers have led to a gradual quarterly decrease in overall DRAM supply. Seasonal demand, on the other hand, is helping to mitigate inventory pressure on suppliers. TrendForce projects that the third quarter will see the ASP for DRAM converging towards a 0~5% decline. Despite suppliers' concerted efforts, inventory levels persistently remain high, keeping prices low. While production cutbacks may help to curtail quarterly price declines, a tangible recovery in prices may not be seen until 2024.

PC DRAM: The benefits of consolidated production cuts on DDR4 by the top three suppliers are expected to become evident in the third quarter. Furthermore, inventory pressure on suppliers has been partially alleviated due to aggressive purchasing by several OEMs at low prices during 2Q23. Evaluating average price trends for PC DRAM products in 3Q23 reveals that DDR4 will continue to remain in a state of persistent oversupply, leading to an expected quarterly price drop of 3~8%. DDR5 prices—influenced by suppliers' efforts to maintain prices and unmet buyer demand—are projected to see a 0-5% quarterly decline. The overall ASP of PC DRAM is projected to experience a QoQ decline of 0~5% in the third quarter.

In today's world demand for visual brilliance and digital content creation is skyrocketing, paving the way for more advanced technologies that support the production and consumption of rich content. For consumers, students, and professionals, fast, reliable tools are a must-have to keep their imaginations flowing. Building upon its award-winning SSD portfolio, Western Digital released the WD Blue SN580 NVMe solid state drive (SSD). The new, NVMe PCIe Gen 4.0 internal flash drive is purpose-built for the creative enthusiast community and professionals to use when upgrading current PCs or elevating a custom build.

"As creator workflows become more robust and complex with heavy applications and large multimedia assets like 4K video, it's easy to become frustrated with long load times," said Eric Spanneut, vice president of client and enterprise SSDs for Western Digital. "The new WD Blue SN580 NVMe SSD boosts productivity, so professionals and entrepreneurial creators can focus on bringing their imaginations to life without having to wait long for files to transfer or programs to load."

[Editor's note: Our in-depth review of the SN580 is now live]

Micron Technology, Inc., one of the world's largest semiconductor companies, today announced plans to build a new assembly and test facility in Gujarat, India. Micron's new facility will enable assembly and test manufacturing for both DRAM and NAND products and address demand from domestic and international markets.

Phased construction of the new assembly and test facility in Gujarat is expected to begin in 2023. Phase 1, which will include 500,000 square feet of planned cleanroom space, will start to become operational in late 2024, and Micron will ramp capacity gradually over time in line with global demand trends. Micron expects Phase 2 of the project, which would include construction of a facility similar in scale to Phase 1, to start towards the second half of the decade.

Industry insiders in South Korea have informed news publications that NVIDIA has requested that SK hynix submit samples of next-generation high bandwidth memory (HBM) for evaluation purposes—according to Business Korea's article, workers were preparing an initial batch of HBM3E prototypes for shipment this week. SK hynix has an existing relationship with NVIDIA—it fended off tough competition last year and has since produced (current gen) HBM3 DRAM for the H100 "Hopper" Tensor Core GPU.

The memory manufacturer is hoping to maintain its position as the HBM market leader with fifth generation products in the pipeline—vice president Park Myung-soo revealed back in April that: "we are preparing 8 Gbps HBM3E product samples for the second half of this year and are preparing for mass production in the first half of next year." A new partnership with NVIDIA could help SK hynix widen the gulf between it and and its nearest competitor - Samsung - in the field of HBM production.

Micron Technology, Inc. (Nasdaq: MU), today announced the Crucial Pro Series which features memory and storage products designed for gamers, content creators, workstation professionals or anyone needing the benefits of a robust, high-performance computing experience with plug-and-play functionality. The Crucial T700 PCIe Gen 5 SSD, the marquee product in the new Pro Series category, offers industry-leading sequential read/write speeds up to 12,400 MB/s and 11,800 MB/s respectively. Random read/write speeds of up to 1,500K IOPS enable faster gaming, video editing, 3D rendering or heavy workload applications. Another addition to the Crucial Pro Series is the Crucial DDR5 Pro and DDR4 Pro DRAM offerings with heat spreaders, providing out-of-the-box performance to improve system speed, bandwidth and responsiveness without the hassle of LEDs and the risks associated with overclocking and latency tuning.

"Today's demanding applications and user workloads require increased performance, along with greater storage capacity and memory bandwidth, to fully leverage the capabilities provided by the latest generation of CPU platforms," said Jonathan Weech, senior director of product marketing for Micron's Commercial Products Group. "The world class Crucial T700 Gen 5 SSD provides unrivaled performance to tackle gaming, UHD/8k+ photo and video editing, heavy workload applications and large data sets. Crucial DDR5 Pro DRAM offers speeds up to 5600MT/s with sleek new heat spreaders that deliver enormous bandwidth under the heaviest of workloads to ensure consistent, maximum performance for gamers and creatives alike."

Team Group unveiled its mighty Team Xtreem DDR5 memory for overclocking, at the 2023 Computex. These modules are designed such that their PCBs are shorter than their height, and instead of cramming RGB LEDs on top, the 2 mm-thick aluminium heat spreader turns into an extruded heatsink. Some of the higher speed versions of these run at DRAM voltages as high as 1.45 V, so the heatsink design should come in handy. The T-Force Xtreem comes in speeds ranging between DDR5-6400 and DDR5-8266, and in capacities ranging from 16 GB (2x 8 GB), going all the way up to 96 GB (2x 48 GB). The T-Force Xtreem RGB has an additional design element in the form of an acrylic RGB LED diffuser, although from the looks of it, this acrylic bit seems to be covering the fins of the heat spreader. It comes in the same speed-based and capacity based variants, as the regular Xtreem DDR5.

At the 2023 Computex, we caught CORSAIR's flagship PC memory line, the DOMINATOR Titanium DDR5 series. These are built to, well, dominate the overclocking and benchmark records scene, and come in several high-speed models, such as DDR5-8000 and DDR5-8266, and capacities as high as 192 GB (4x 48 GB kits). The company also has a limited batch of 500 "First Edition" kits, which feature a gold-on-white color scheme, and the company's highest grade of manual binning.

A defining feature about the DOMINATOR Titanium DDR5 series is their heat spreader design, which consists of 2 mm-thick aluminium making contact with the DRAM chips, which connect to an upper copper heatsink with RGB LEDs studded. The edges of the top have mount-holes, so a set of 2 or 4 of these DIMMs can be bolted onto the company's latest DHX cooling module. This is essentially a chunky slab of anodized aluminium that soaks up and dissipates heat from the DIMMs, and has slats that let the RGB lighting through. CORSAIR is backing these with lifetime warranties, and plans to launch them in July 2023.

SK hynix Inc. announced today that it has completed the development of the industry's most advanced 1bnm, the fifth-generation of the 10 nm process technology, while the company and Intel began a joint evaluation of 1bnm and validation in the Intel Data Center Certified memory program for DDR5 products targeted at Intel Xeon Scalable platforms.

The move comes after SK hynix became the first in the industry to reach 1anm readiness and completed Intel's system validation of the 1anm DDR5, the fourth-generation of the 10 nm technology. The DDR5 products provided to Intel run at the world's fastest speed of 6.4 Gbps (Gigabits per second), representing a 33% improvement in data processing speed compared with test-run products in early days of DDR5 development.

TrendForce reports a dramatic 21.2% QoQ decline in Q1 revenues for the DRAM industry, bringing total revenue down to US$9.663 billion. This significant dip represents the third consecutive quarter where revenues have fallen. A closer look reveals that increased shipment volumes were exclusive to Micron, with other suppliers noting a decrease. The ASP fell for all three major suppliers. An enduring oversupply issue, which has led to an ongoing slump in prices, is the chief culprit behind the decline. Nevertheless, the industry expects a gradual slowing in the rate of price decline following planned production cuts. TrendForce's Q2 forecast suggests a rise in shipments, but the ongoing price fall might limit potential revenue growth.

Each of the three major suppliers—Samsung, Micron, and SK hynix—reported a drop in quarterly revenue. Samsung saw a decline in both shipment volumes and ASP due to fewer orders for its newly launched devices, resulting in a QoQ decrease in revenue of 24.7%, amounting to about US$4.17 billion. Benefiting from its earlier financial reporting and the tail-end orders of the previous year, Micron climbed to the second position in 1Q23. Despite being the only supplier among the big three to record positive shipment growth, Micron couldn't avoid a minor 3.8% revenue decline, taking its total down to US$2.72 billion. SK hynix faced the steepest decline, with more than a 15% drop in both shipment volume and ASP, leading to a drastic 31.7% plunge in revenue, amounting to approximately USD$2.31 billion.

Leading memory brand, Team Group, returns to COMPUTEX 2023 with the theme "DAZZLE．CHILL．INTEGRATE" to introduce six new products in the memory, cooling solution, and storage device categories. They will be unveiled for the first time at COMPUTEX (5/30-6/2), showcasing Team Group's latest cooling solutions and "aurora" RGB lighting tech as the highlights of the grand exhibition. This year's exhibition is split into two display areas for T-FORCE and T-CREATE's new products. In addition to a large gradient LED screen that will demonstrate T-FORCE's industry-leading RGB technology, there will be physical display areas for the new products, each of which will create an immersive interactive experience that displays the cooling and aurora theme of the exhibition. Attendees will be met with a visual feast of colorful lighting and cool tech.

T-FORCE XTREEM ARGB DDR5 Gaming Overclocking Memory is equipped with innovative dual light pipes which utilize black translucent acrylic and multi-optical designs to display a soft aurora-like flow of light. The matte heat spreader of the XTREEM ARGB DDR5 is made of high-quality 2 mm black aluminium alloy, which has undergone aluminium extrusion, CNC processing, sandblasting, and black anodizing, creating a unique material that combines the hardness and durability of basalt and the soft texture of black beach sand. It comes in a variety of frequencies starting from DDR5-7000 to DDR5-8266 and is specially designed for gamers after an extreme performance and dazzling RGB lighting.

The Korea Intellectual Property Rights Information Service (KIPRIS) has been processing a bunch of trademark applications in recent weeks, submitted by Samsung Electronics Corporation. News outlets pointed out, earlier on this month, that the South Korean multinational manufacturing conglomerate was attempting to secure the term "Snowbolt" as a moniker for an unreleased HBM3P DRAM-based product. Industry insiders and Samsung representatives have indicated that high bandwidth memory (5 TB/s bandwidth speeds per stack) will be featured in upcoming cloud servers, high-performance and AI computing - slated for release later on in 2023.

A Samsung-focused news outlet, SamMobile, has reported (on May 15) of further trademark applications for next generation DRAM (Dynamic Random Access Memory) products. Samsung has filed for two additional monikers - "Shinebolt" and "Flamebolt" - details published online show that these products share the same "designated goods" descriptors with the preceding "Snowbolt" registration: "DRAM modules with high bandwidth for use in high-performance computing equipment, artificial intelligence, and supercomputing equipment" and "DRAM with high bandwidth for use in graphic cards." Kye Hyun Kyung, CEO of Samsung Semiconductor, has been talking up his company's ambitions of competing with rival TSMC in providing cutting edge component technology, especially in the field of AI computing. It is too early to determine whether these "-bolt" DRAM products will be part of that competitive move, but it is good to know that speedier memory is on the way - future generation GPUs are set to benefit.

Samsung Electronics, a world leader in advanced memory technology, today announced that its 16-gigabit (Gb) DDR5 DRAM, which utilizes the industry's most advanced 12 nanometer (nm)-class process technology, has started mass production. Samsung's completion of the state-of-the-art manufacturing process reaffirms its leadership in cutting-edge DRAM technology.

"Using differentiated process technology, Samsung's industry-leading 12 nm-class DDR5 DRAM delivers outstanding performance and power efficiency," said Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics. "Our latest DRAM reflects our continued commitment to leading the DRAM market, not only with high-performance and high-capacity products that meet computing market demand for large-scale processing but also by commercializing next-generation solutions that support greater productivity."

Samsung Electronics, a world leader in advanced semiconductor technology, today announced its development of the industry's first 128-gigabyte (GB) DRAM to support Compute Express Link (CXL) 2.0. Samsung worked closely with Intel on this landmark advancement on an Intel Xeon platform.

Building on its development of the industry's first CXL 1.1-based CXL DRAM in May of 2022, Samsung's introduction of the 128 GB CXL DRAM based on CXL 2.0 is expected to accelerate commercialization of next-generation memory solutions. The new CXL DRAM supports PCle 5.0 interface (x8 lanes) and provides bandwidth of up to 35 GB per second.