Toshiba Corporation today announced the development of BENAND, a versatile, multi-application single level cell (SLC) NAND flash memory with an embedded error correction code (ECC). BENAND's diverse applications include LCD TVs and digital cameras along with robots and other industrial applications. Samples of eight BENAND products in two capacities, 4 Gigabit and 8 Gigabit, will be available from today and mass production will follow from March 2012.

The simple interface and high reliability of small capacity SLC NAND has won it wide use in consumer applications and industrial programming. Until now, the ECC has been embedded in the host processor and corrected 1 bit per 512 bytes. However, advances in memory process technology require enhanced error correction; more than 4 bit correction per 512 bytes for NAND flash fabricated with 32nm process. For NAND flash memory without ECC fabricated with 32nm and beyond, the controller in the host processor must be changed to secure the required level of correction.

PNY Technologies, Inc. ("PNY") is considered a leading designer, manufacturer and a worldwide leader in DRAM Memory and Flash Memory products, today announced the new Brick Attaché USB Flash drive. This drive sports a unique, playful and fun building block design of children's toys, steering away from the traditional serious designs associated with USB flash drives.

PNY's new Brick Attaché drive is made of strong non-slip polymer material with a dotted embossed texture. The dark blue body has a wedge-shaped notch at the end far from the white cap, while the cap has a similar shaped protrusion, which fits snugly in this notch. This prevents the cap from getting lost. Additionally, if you have more than one such drives, you can connect them one after another forming a train or any such imaginary object according to your creativity.

PNY Technologies, Inc., is considered a leading designer, manufacturer and a worldwide leader in DRAM Memory and Flash Memory products, and authorized partnership with HP since 2008. December 2011 PNY has introduced its popular line-up - the HP v240b/v240g, which is a tiny but elegant designed drive targeting mainly business people. The drive comes in no-nonsense plastic casing in classic blue and green colors. The clean design is meant to symbolize tidiness and a coherent professional feeling at the workplace.

The drive comes with a cap to protect the USB plug from dust and water. In fact, the drive is not only rugged, it is also dustproof and waterproof, with the strong polymer lending it durability and resistance to shock. The cap has a keyhole to attach a lanyard, useful to attach it to your purse, keychain, belt, etc. The COB packaging helps achieve such a small dimensions of 7 mm x 16 mm x 31 mm and just 4.2 grams, thus giving it ultra-portability.

Flash memory major Samsung announced plans to build a new flash memory plant in China to meet growing demands by mobile computing device manufacturers in the coming years. The new manufacturing plant will be built at a cost of over US $4 billion, Samsung hopes it will fuel the $22 billion flash memory industry's growth next year. When operationalised, the new flash memory plant will be Samsung's second outside South Korea.

The NAND flash memory industry is seeing exceptional growth at 20%, it will be worth $26 billion next year. President of Samsung's memory business, Jun Dong-soo, said in a statement "[The new factory] will enable us to meet fast growing demand from our customers and at the same time strengthen our overall competitiveness in the memory industry."

Memoright, a leading provider of solid state drive (SSD) products, unveils its latest SSD solutions HTM series which delivers constant sequential performance and constant random access performance and allows MLC- based SSDs to deliver longer life span for enterprise storage.

As Memoright's Chairman and CEO Eric Kao stated in the keynote speech of Flash Memory Summit, "one size does not fit all in SSD world." SSDs are not simply as a faster version of HDDs. If SSD's performance characteristic does not match data access patterns, SSDs will not perform as expected and sometimes can be slower than HDDs.

Micron Technology, Inc., today introduced the highest-density Serial Peripheral Interface (SPI) NOR memory available, launching 1 gigabit (Gb), 512 megabit (Mb) and 256Mb products in both 1.8V and 3V power supply voltages. Employing state-of-the-art 65nm process technology, the N25Q product family offers the highest-speed quad I/O in the industry and a full set of advanced features and small packages that improve overall system performance and time-to-market in networking, set-top boxes, automotive and a wide range of industrial, computing and consumer applications.

Extending the company's legacy of memory leadership, Micron's new SPI NOR product line balances customers' needs for cost-effective solutions at higher densities while ensuring compatibility among future chipsets. Micron's long-term commitment to customers in the embedded markets is reinforced by Micron's Product Longevity Program (PLP) - a 10-year commitment to provide stable memory architectures for customer designs. The new N25Q products will be offered as part of this program to provide design assurance for its PLP customers.

Spansion Inc., today announced the industry's first single-die 4Gb (gigabit) NOR Flash memory product at 65nm. The 4Gb Spansion GL-S delivers high-quality and fast read performance to enable a better user experience with interactive graphics, animation and video in games and automotive applications.

The newest addition to the flagship Spansion GL-S product line is sampling this month. Based on Spansion's proprietary, highly reliable MirrorBit charge-trapping technology, the Spansion GL-S delivers the fastest read performance in the industry, up to 45 % faster read than competing NOR Flash products. The Spansion GL-S family is currently offered at 128Mb through 2Gb densities and the company is gaining design win momentum for the product family with consumer, automotive, gaming, telecom and industrial applications.

Seagate has shipped its one millionth solid state hybrid drive for laptop PCs after launching the product - Momentus XT - in spring 2010. Major computer makers including Alienware, ASUS, Dell, Sony and Toshiba now offer laptops powered by the 2.5-inch drive that blends performance rivaling solid state drives with the enormous capacity and much lower cost of hard disk drives.

The Momentus XT solid state hybrid drive, a 7200RPM drive with up to 500GB of capacity, boots up to 50 percent faster than traditional 5400RPM drives and sets new benchmarks for real-world system performance for laptops and gaming systems. Seagate's Adaptive Memory technology is key to the drive's speed, optimizing its performance by moving frequently used information into the 4GB of onboard solid state memory for faster bootup and application access.

Toshiba Corporation and SanDisk Corporation today celebrated the opening of Fab 5, the third 300mm wafer NAND fabrication facility at Toshiba's Yokkaichi Operations in Mie Prefecture, Japan.

Consumer demand for smartphones, tablets and other electronic devices continues to fuel strong global demand for NAND flash memory. Toshiba began the construction of Fab 5 in July 2010, and the new facility, equipped with manufacturing equipment funded by Toshiba and SanDisk, started volume production in July 2011. Fab 5 currently uses 24 nanometer (nm) process technology and its first wafer outs will be in August. In time, the fab will transition to more advanced process generations, starting with recently announced 19nm technology, the world's smallest, most advanced process node.

Verbatim, the global leader in data storage technology including portable hard drives, USB flash drives, CDs, Blu-ray discs and memory cards, packs unparalleled power, speed and reliability into its new Store 'n' Stay USB Drive. "The low-profile, snag-free design makes it the optimal USB flash drive choice for laptop users who want the ability to transfer, store and share their favorite files on impulse," said Mark Rogers, Verbatim Product Manager, Flash Memory. "It's meant to be left in the USB port for always-ready storage, and can be easily removed to share videos, photos, and music whenever the occasion arises!"

Available in 4GB, 8GB and 16GB storage capacities, the Store 'n' Stay USB drive is a must-have accessory for any notebook or netbook user. Designed to be left in the USB port, its low-profile design makes sliding laptops or notebooks out of travel bags, sleeves and cases a cinch. It protrudes a mere 5 mm and can be easily removed for quick, convenient file sharing. Compatible with most Windows 2000, XP, Vista, and Windows 7 as well as Mac OS 9 or higher systems, the ultra compact Store 'n' Stay USB Drive features a USB 2.0 interface and is backed by Verbatim's Limited Lifetime Warranty.

Patriot Memory, a global pioneer in high-performance memory, NAND flash, storage and enthusiast computer products, today announces the new high-performance Torqx 2 - a new SSD that delivers the perfect balance of price and performance. The Patriot Torqx 2 series enables users to boost performance of existing desktops and notebooks to achieve maximum performance with SATA II 3.0 Gb/s interfaces.

By combining a cutting-edge newSSD controller with high-performance 3x-nm NAND flash memory, the Patriot Torqx 2 SSDs achieve up to read speeds up to 270MB/s for a noticeable performance boost with daily computing tasks. Write speeds up to 230MB/s ensure the Patriot Torqx 2 series can write virtually as fast as it reads for lightning-fast software installations and large-file creation.

Intel Corporation (Nasdaq:INTC) and Micron Technology, Inc. today expanded their NAND Flash memory joint venture operations with the official opening of IM Flash Singapore. The US$3 billion facility is expected to employ about 1,200 and is currently ramping production of the companies' industry-leading 25 nanometer (nm) NAND Flash memory. The companies announced the opening of the state-of-the-art 300 millimeter facility at a ceremony with Singapore government representatives, including Prime Minister Lee Hsien Loong.

"In just five short years, Intel and Micron have successfully collaborated to become the industry's NAND Flash leader," said Steve Appleton, Micron Chairman and CEO. "The opening of IM Flash Singapore marks another significant milestone in our partnership and complements Micron's Singapore operations that serve as our company's Asian hub."

Toshiba Corporation, reinforcing its leadership in the development and fabrication of cutting-edge, high density NAND flash memories, today announced that it has fabricated NAND flash memories with 19 nm process technology, the finest level yet achieved. This latest technology advance has already been applied to 2-bit-per-cell 64-gigabit (Gb) chips that are the world's smallest and offer the highest density on a single chip (8 gigabytes (GB)). Toshiba will also add 3-bit-per-cell products fabricated with the 19nm process technology to its product line-up.

Samples of 2-bit-per-cell 64-gigabit will be available from the end of this month with mass production scheduled for the third quarter of the year (July to September 2011). Toshiba leads the industry in fabricating high density, small die size NAND flash memory chips. Application of the 19nm generation process technology will further shrink chip size, allowing Toshiba to assemble sixteen 64Gbit NAND flash memory chips in one package and to deliver 128GB devices for application in smartphones and tablet PCs. The 19nm process products are also equipped with Toggle DDR2.0, which enhances data transfer speed.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of its next-generation storage system standard, Universal Flash Storage (UFS). UFS is designed to be the most advanced specification for both embedded and removable flash memory-based storage in mobile devices such as smart phones and tablet computers.

The UFS standard represents an evolutionary progression of JEDEC standards in this field, and has been specifically tailored for mobile applications and computing systems requiring high performance and low power consumption. The initial data throughput for UFS will be 300 megabytes per second (MB/s), and the standard also supports command queuing features to raise random read/write speeds. JESD220 Universal Flash Storage may be downloaded free of charge from the JEDEC website here.

SanDisk today announced the world's fastest high-capacity CompactFlash card. The latest milestone in SanDisk's long history of industry-leading products, the SanDisk Extreme Pro CompactFlash card features 128 gigabytes (GB) of storage and up to 100 megabyte per second (MB/sec) write speeds. With its Power Core controller and UDMA-7 interface, the card delivers the performance demanded by high-end DSLR cameras.

SanDisk today announced the world's fastest high-capacity CompactFlash card. The latest milestone in SanDisk's long history of industry-leading products, the SanDisk Extreme Pro CompactFlash card features 128 gigabytes (GB) of storage and up to 100 megabyte per second (MB/sec) write speeds. With its Power Core controller and UDMA-7 interface, the card delivers the performance demanded by high-end DSLR cameras.

Micron Technology, Inc. today introduced a portfolio of high-capacity flash memory products that will lengthen the life of NAND for years to come. By integrating the error management techniques in the same NAND package, the new Micron ClearNAND devices alleviate the challenges traditionally found in NAND process shrinks. Micron's ClearNAND portfolio extends the opportunities for more advanced NAND process generations to be used in enterprise servers, tablet PCs, portable media players, and dozens of other consumer applications.

"The pace of NAND scaling is largely responsible for the incredible growth and success the industry has seen to date, and for helping to create new flash-based storage solutions," said Glen Hawk, vice president of Micron's NAND Solutions Group. "While the advantages in NAND scaling are evident, so are the challenges with the technology becoming increasingly more difficult to manage. Micron's ClearNAND products remove this management burden for our customers and extend the life of this all-important technology."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today the industry's first production of a 3-bit-cell (3bit), 64 gigabit (Gb) NAND flash using 20 nanometer (nm)-class process technology. The highly advanced new chip can be used in high-density flash solutions such as USB flash drives (UFDs) and Secure Digital (SD) memory cards.

"Samsung has repeatedly provided the market with leading-edge NAND flash solutions, including the introduction of 30nm-class, 32Gb 3-bit NAND flash last November," said Seijin Kim, vice president, Flash Memory Planning/Enabling, Samsung Electronics. "By now entering into full production of 20nm-class 64Gb 3-bit devices, we expect to accelerate adoption of our high-performance NAND solutions that use Toggle DDR technology, for applications that also require high-density NAND."

Elpida Memory, Inc. and Spansion Inc., today announced they have created the industry's first charge-trapping 1.8 V, 4-gigabit SLC (Single Level Cell) NAND Flash memory. This NAND memory, based on Spansion's MirrorBit charge-trapping technology, is being produced at Elpida's Hiroshima factory. The advanced technical expertise and strong cooperation of the two companies has made it possible to develop and manufacture the world's first charge-trapping NAND Flash memory.

Compared to floating-gate NAND Flash memory, charge-trapping NAND Flash memory is more scalable and has a simpler cell structure. It offers superior performance, faster read and faster programming speeds.

Toshiba Corporation, reinforcing its leadership in the development and fabrication of cutting-edge, high density NAND flash memories, has announced that it today started mass production of NAND flash memories fabricated with 24nm*1 process technology. This latest technology advance has already been applied to 2bit-per-cell 64-gigabit (Gb) chips that are the world's smallest and offer the highest density on a single chip (8 gigabytes (GB))*2, and which are available from today. Toshiba will also add 32Gb and 3bit per cell products fabricated with the 24nm process technology to its product line-up.

Toshiba leads the industry in fabricating high density, small die size NAND flash memory chips. Application of the 24nm generation process technology will further shrink chip size, allowing Toshiba to boost productivity and bring further enhancements to high density, small sized products. The 24nm process products are also equipped with Toggle DDR, which enhances data transfer speed.

Intel Corporation and Micron Technology Inc. today announced the delivery of 3-bit-per-cell (3bpc) NAND flash memory on 25-nanometer (nm) process technology, producing the industry's highest capacity, smallest NAND device. The companies have sent initial product samples to select customers. Intel and Micron expect to be in full production by the end of the year.

The new 64-gigabit (Gb) 3bpc on 25nm memory device offers improved cost efficiencies and higher storage capacity for the competitive USB, SD (Secure Digital) flash card and consumer electronics markets. Flash memory is primarily used to store data, photos and other multimedia for use in capturing and transferring data between computing and digital devices such as digital cameras, portable media players, digital camcorders and all types of personal computers. These markets are under constant pressure to provide higher capacities at low prices.

OCZ Technology Group, Inc., a leading provider of high-performance solid-state drives (SSDs) and memory modules for computing devices and systems, will showcase the Company's leading-edge SSD solutions at the 2010 Flash Memory Summit in booth #415 at the Santa Clara Convention Center in Santa Clara, CA August 17-19. OCZ's commitment to advancing flash technology for enterprise and commercial applications makes the Flash Summit is the ideal space to demonstrate cutting edge technology and solutions.

OCZ will demonstrate the breakthrough HSDL (High Speed Data Link) interface and accompanying IBIS 3.5" HSDL SSD, which was developed to revolutionize data transfer rates and bandwidth and take SSD storage technology to the next level. HSDL eliminates the SATA bottleneck and is ideal for a wide range of enterprise applications including high performance computing, servers and cloud computing solutions. Likewise, the RevoDrive PCI-Express SSD will be entered in the "Best of Show" awards as the highest performing bootable PCI-E drive at its price point on the market.

Toshiba America Electronic Components, Inc.(TAEC) and its parent company Toshiba Corporation today announced the launch of a 128-gigabyte (GB) embedded NAND flash memory module, the highest capacity yet achieved in the industry. The module is fully compliant with the latest e-MMC standard, and is designed for application in a wide range of digital consumer products, including smartphones, tablet PCs and digital video cameras. Samples will be available in September, and mass production will start in the fourth quarter (October to December) of 2010.

The new 128GB embedded device integrates sixteen 64Gbit (equal to 8GB) NAND chips fabricated with Toshiba's cutting-edge 32nm process technology and a dedicated controller into a small package 17 x 22 x 1.4mm. Toshiba is the first company to succeed in combining sixteen 64Gbit NAND chips, and applied advanced chip thinning and layering technologies to realize individual chips that are only 30 micrometers thick.

Fujitsu Microelectronics Limited today announced the development of new flash memory macro that enables NOR flash memory circuits to achieve high-speed read operations while operating at low power currents. The new flash memory macro is guaranteed to retain program data storage for 20 years, or 100,000 write/erase cycles for data storage, while improving access speeds by 2.5 times to 10 nanoseconds (10 ns), and reducing the required operating current per cell by two-thirds to 9 microamperes (9 µA), compared to Fujitsu's past technologies. This technology will be implemented in microcontrollers featuring embedded flash memory in automotive, industrial, and consumer electronics applications for which high speed, low current, and high reliability are all priorities, thus contributing to a reduction in the burden on the environment.

Intel Corporation and Micron Technology, Inc. today announced the world's first 25-nanometer (nm) NAND technology, which provides a more cost-effective path for increasing storage capacity in such popular consumer gadgets as smartphones, personal music and media players (PMPs), as well as the new high-performance class of solid-state drives (SSDs).

NAND flash memory stores data and other media contained in consumer electronics products, retaining information even when the power is turned off. The drive toward smaller NAND processes enables the continued development and introduction of new uses for the technology. Not only is the 25nm process the smallest NAND technology, it is also the smallest semiconductor technology in the world - a technological accomplishment that continues the advancement of more music, video, and other data in today's consumer electronics and computing applications.

Toshiba Corp. (Toshiba) and Toshiba America Electronic Components, Inc. (TAEC), its subsidiary in the Americas, today announced the launch of a 64 gigabyte (GB) embedded NAND flash memory module, the highest capacity yet achieved in the industry. The chip is the flagship device in a line-up of six new embedded NAND flash memory modules that offer full compliance with the latest e-MMC standard, and that are designed for application in a wide range of digital consumer products, including Smartphones, mobile phones, netbooks and digital video cameras. Samples of the 64GB module are available from today, and mass production will start in the first quarter of 2010.

The new 64GB embedded device combines sixteen pieces of 32Gbit (equal to 4GB) NAND chips fabricated with Toshiba's cutting-edge 32nm process technology, and also integrates a dedicated controller. Toshiba is the first company to succeed in combining 16 pieces of 32Gbit NAND chips, and applied advanced chip thinning and layering technologies to realize individual chips that are only 30 micrometers thick. Full compliance with the JEDEC/MMCA Version 4.4(V4.4) standard for embedded MultiMediaCards supports standard interfacing and simplifies embedding in products, reducing development burdens on product manufacturers. Toshiba offers a comprehensive line-up of single-package embedded NAND Flash memories in densities ranging from 2GB to 64GB. All integrate a controller to manage basic control functions for NAND applications, and are compatible with the latest e-MMC standard and its new features, including defining multiple storage areas and enhanced security features.