Micron Technology, Inc. announced today that it is delivering qualification samples of an enhanced version of its Universal Flash Storage (UFS) 4.0 mobile solution with breakthrough proprietary firmware features delivered in the world's most compact UFS package at 9x13 millimeters (mm). Built on its advanced 232-layer 3D NAND and offering up to 1 terabyte (TB) capacity, the UFS 4.0 solution provides best-in-class performance and end-to-end innovation, enabling faster and more responsive experiences on flagship smartphones.

Micron UFS 4.0 accelerates data-intensive experiences with up to 4300 megabytes per second (MBps) sequential read and 4000 MBps sequential write speed, twice the performance of previous generations. With these speeds, users will be able to launch their favorite productivity, creativity, and emerging AI apps more quickly. Large language models in generative AI applications can be loaded 40% faster, resulting in a smoother experience when initializing conversations with AI digital companions.

Sabrent today announced its latest flagship M.2 NVMe SSD series, the Rocket 5. Built in the M.2-2280 form-factor, the Sabrent Rocket 5 is sold as a bare drive, with an included fan-heatsink that you install if needed. This cooler comes with a tiny fins-stack, two copper heat pipes, and a 20 mm fan. At the heart of the drive is the new Phison PS5026-E26 Max14um controller, paired with Micron B58R 232-layer 3D TLC NAND flash memory, and LPDDR4 based DRAM cache. The drive comes in 1 TB, 2 TB, and 4 TB capacity variants.

The company didn't put out capacity-specific performance or endurance numbers, but mentioned sequential read speeds of up to 14 GB/s, as is characteristic of the Max14um controller variant; up to 12 GB/s sequential write speeds, up to 1.55 million IOPS 4K random reads, with up to 1.8 million IOPS 4K random writes. The Rocket 5 replaces the Rocket 4 Plus as Sabrent's flagship SSD. The 4 TB variant is listed at $730, the 2 TB variant at $340, and the 1 TB variant at $190.

Micron Technology, Inc. (Nasdaq: MU), a global leader in memory and storage solutions, today announced it has begun volume production of its HBM3E (High Bandwidth Memory 3E) solution. Micron's 24 GB 8H HBM3E will be part of NVIDIA H200 Tensor Core GPUs, which will begin shipping in the second calendar quarter of 2024. This milestone positions Micron at the forefront of the industry, empowering artificial intelligence (AI) solutions with HBM3E's industry-leading performance and energy efficiency. As the demand for AI continues to surge, the need for memory solutions to keep pace with expanded workloads is critical.

Micron's HBM3E solution addresses this challenge head-on with:

• Superior Performance: With pin speed greater than 9.2 gigabits per second (Gb/s), Micron's HBM3E delivers more than 1.2 terabytes per second (TB/s) of memory bandwidth, enabling lightning-fast data access for AI accelerators, supercomputers, and data centers.
• Exceptional Efficiency: Micron's HBM3E leads the industry with ~30% lower power consumption compared to competitive offerings. To support increasing demand and usage of AI, HBM3E offers maximum throughput with the lowest levels of power consumption to improve important data center operational expense metrics.
• Seamless Scalability: With 24 GB of capacity today, Micron's HBM3E allows data centers to seamlessly scale their AI applications. Whether for training massive neural networks or accelerating inferencing tasks, Micron's solution provides the necessary memory bandwidth.

Micron Technology, Inc., today announced two new Crucial Pro Series products with the addition of overclocking-capable memory and the world's fastest Gen 5 SSD. The Crucial DDR5 Pro Memory: Overclocking Edition modules are available in 16 GB densities up to DDR5-6000 to deliver higher performance, lower latencies and better bandwidth to fuel gaming wins and reduce performance bottlenecks. These powerful DDR5 overclocking DRAM modules are compatible with the latest DDR5 Intel and AMD CPUs and support both Intel XMP 3.0 and AMD EXPO specifications on every module, eliminating compatibility hassles. Built with leading-edge Micron 232-layer TLC NAND, the Crucial T705 SSD unleashes the full potential of Gen 5 performance.

Lightning-fast sequential reads and writes up to 14,500 MB/s and 12,700 MB/s (up to 1,550K/1,800K IOPS random reads and writes) respectively, enable faster gaming, video editing, 3D rendering and heavy workload AI application processing. With DDR5 Pro Overclocking DRAM and the T705 SSD, enthusiasts, gamers and professionals can harness the speed, bandwidth and performance they need for AI-ready PC builds capable of processing, rendering and storing large volumes of AI generated content.

Crucial launched its Crucial T700 Gen 5 SSD family midway through last year—a "marquee product" within their (at the time) new Pro Series family—thanks to industry-leading performance. Micron's consumer brand boasted about the T700's technical prowess: "sequential read/write speeds (of) up to 12,400 MB/s and 11,800 MB/s respectively." The Micron 232-layer TLC NAND-equipped SSD range was leaked two months ahead of an eventual May 2023 launch, and history is seemingly repeating itself with a semi-related product in early 2024. Hardware sleuth, momomo_us, has uncovered Crucial T705 and T705 Limited Edition models—the latter appears to be outfitted with a special white variation of the company's "SSD5" corrugated passive heatsink design (as seen in W1zzard's T700 review). Crucial's "SSD3" model suffix indicates a barebones package—minus the chunky "premium" aluminium and nickel-plated copper heatsink.

An alleged T705 specification sheet was leaked to social media over the past weekend—courtesy of Deepbluen's response to the initial momomo_us post. Crucial seems to be targeting industry leading performance once more—their 2 TB T705 model leads the pack with 14,500 MB/s read and 12,700 MB/s write speeds. The capacity range topper (4 TB) trails a little bit behind at 14,100 MB/s read and 12,400 MB/s (respectively), with the 1 TB model exhibiting a relatively sluggish 13,600 MB/s read and 10,200 MB/s (respectively). The leaked sheet does not contain any details regarding Crucial's choice of controller, as well as DRAM cache numbers and endurance figures. We see a repeat of the T700's Micron 232-layer TLC NAND, but we will have to wait a little longer to find out whether Phison's E26 controller is making a comeback (with entailing potential technical issues).

SK Hynix has unveiled ambitious High Bandwidth Memory (HBM) roadmaps at SEMICON Korea 2024. Vice President Kim Chun-hwan announced plans to mass produce the cutting-edge HBM3E within the first half of 2024, touting 8-layer stack samples already supplied to clients. This iteration makes major strides towards fulfilling surging data bandwidth demands, offering 1.2 TB/s per stack and 7.2 TB/s in a 6-stack configuration. VP Kim Chun-hwan cites the rapid emergence of generative AI, forecasted for 35% CAGR, as a key driver. He warns that "fierce survival competition" lies ahead across the semiconductor industry amidst rising customer expectations. With limits approaching on conventional process node shrinks, attention is shifting to next-generation memory architectures and materials to unleash performance.

SK Hynix has already initiated HBM4 development for sampling in 2025 and mass production the following year. According to Micron, HBM4 will leverage a wider 2048-bit interface compared to previous HBM generations to increase per-stack theoretical peak memory bandwidth to over 1.5 TB/s. To achieve these high bandwidths while maintaining reasonable power consumption, HBM4 is targeting a data transfer rate of around 6 GT/s. The wider interface and 6 GT/s speeds allow HBM4 to push bandwidth boundaries significantly compared to prior HBM versions, fueling the need for high-performance computing and AI workloads. But power efficiency is carefully balanced by avoiding impractically high transfer rates. Additionally, Samsung is aligned on a similar 2025/2026 timeline. Beyond pushing bandwidth boundaries, custom HBM solutions will become increasingly crucial. Samsung executive Jaejune Kim reveals that over half its HBM volume already comprises specialized products. Further tailoring HBM4 to individual client needs through logic integration presents an opportunity to cement leadership. As AI workloads evolve at breakneck speeds, memory innovation must keep pace. With HBM3E prepping for launch and HBM4 in the plan, SK Hynix and Samsung are gearing up for the challenges ahead.

According to sources close to Seoul Economy, and reported by DigiTimes, Intel has reportedly chosen Samsung as a supplier for its next-generation Lunar Lake processors, set to debut later this year. The report notes that Samsung will provide LPDDR5X memory devices for integration into Intel's processors. This collaboration could be a substantial win for Samsung, given Intel's projection to distribute millions of Lunar Lake CPUs in the coming years. However, it's important to note that this information is based on a leak and has not been officially confirmed. Designed for ultra-portable laptops, the Lunar Lake-MX platform is expected to feature 16 GB or 32 GB of LPDDR5X-8533 memory directly on the processor package. This on-package memory approach aims to minimize the platform's physical size while enhancing performance over traditional memory configurations. With Lunar Lake's exclusive support for on-package memory, Samsung's LPDDR5X-8533 products could significantly boost sales.

While Samsung is currently in the spotlight, it remains unclear if it will be the sole LPDDR5X memory provider for Lunar Lake. Intel's strategy involves selling processors with pre-validated memory, leaving the door open for potential validation of similar memory products from competitors like Micron and SK Hynix. Thanks to a new microarchitecture, Intel has promoted its Lunar Lake processors as a revolutionary leap in performance-per-watt efficiency. The processors are expected to utilize a multi-chipset design with Foveros technology, combining CPU and GPU chipsets, a system-on-chip tile, and dual memory packages. The CPU component is anticipated to include up to eight cores, a mix of four high-performance Lion Cove and four energy-efficient Skymont cores, alongside advanced graphics, cache, and AI acceleration capabilities. Apple's use of on-package memory in its M-series chips has set a precedent in the industry, and with Intel's Lunar Lake MX, this trend could extend across the thin-and-light laptop market. However, systems requiring more flexibility in terms of configuration, repair, and upgrades will likely continue to employ standard memory solutions like SODIMMs and/or the new CAMM2 modules that offer a balance of high performance and energy efficiency.

Patriot Memory brought their latest ware to the 2024 International CES that use recent advancements in tech on both the SSD and memory fronts. On the SSD front, this year sees 14 GB/s capable PCIe Gen 5 NVMe SSDs thanks to Phison's E26 Max14um controller; and a new crop of USB4 portable SSDs; while the memory front sees DDR5 speeds go far north of DDR5-6000, thanks to on-module CKDs. Patriot showed us examples of each.

First up, there's the Patriot Viper PV573 Gen 5 NVMe SSD. This thing comes in capacities of up to 4 TB, and combines a Phison E26 Max14um controller with Micron's latest B58R TLC NAND flash chips that offer 2400 MT/s per flash channel. The controller also gets some incremental thermal optimizations, which means the cooling solution for the PV573 is a 16.5 mm-tall fan-heatsink. The drive offers up to 14 GB/s sequential reads, with up to 12 GB/s sequential writes. There's also a slightly de-rated version of this drive, the Viper PV553, which has the same combination of controller and NAND flash, but with transfer speeds of up to 12.4 GB/s reads, with up to 11.8 GB/s writes.

Crucial, the client-focused brand of memory giant Micron Technology, showed off a handful new innovations at its booth along the sidelines of the 2024 International CES. First up, is a prototype USB4 portable SSD and prototype desktop SSD. These are proofs of concept, and not actual products. With this, Crucial is testing the waters with USB4 and its delicious 40 Gbps bidirectional bandwidth, which unlocks a new generation of fast removable storage devices. The prototype USB4 portable SSD comes in a tiny chassis about the size of a burner phone. It is a PCB with an M.2-2280 slot with PCIe Gen 4 x4 wiring, connected to an ASMedia ASM2464PD USB4 bridge chip. An OEM Micron Gen 4 SSD with 232-layer 3D TLC NAND flash and LPDDR4 DRAM cache, is installed on this drive. The CDM reading for this drive is 3821 MB/s sequential reads, with 885 MB/s sequential writes.

Next up, is a larger desktop SSD prototype (which again, isn't an actual product but a proof of concept). Its metal chassis is about the size of a 3.5-inch HDD. Inside is at least one M.2-2280 Gen 4 slot (there are probably more); with a preinstalled drive. An ASMedia ASM2464PD handles things here, too. The performance is mostly similar, at 3792 MB/s sequential reads, but with significantly increase 3803 MB/s sequential writes. This may seem unspectacular because Thunderbolt 4 has been delivering 40 Gbps for many years now, and we've had TB4-based external SSDs; but USB4 somewhat democratizes this kind of bandwidth.

Micron Technology, Inc. (Nasdaq: MU) today announced results for its first quarter of fiscal 2024, which ended November 30, 2023.

Fiscal Q1 2024 highlights

• Revenue of $4.73 billion versus $4.01 billion for the prior quarter and $4.09 billion for the same period last year
• GAAP net loss of $1.23 billion, or $1.12 per diluted share
• Non-GAAP net loss of $1.05 billion, or $0.95 per diluted share
• Operating cash flow of $1.40 billion versus $249 million for the prior quarter and $943 million for the same period last year

"Micron's strong execution and pricing drove better-than-anticipated first quarter financial results," said Micron Technology President and CEO Sanjay Mehrotra. "We expect our business fundamentals to improve throughout 2024, with record industry TAM projected for calendar 2025. Our industry-leading High Bandwidth Memory for data center AI applications illustrates the strength of our technology and product roadmaps, and we are well positioned to capitalize on the immense opportunities artificial intelligence is fueling across end markets."

At the beginning of this year, MSI announced the pioneering support for a memory capacity of 192 GB. Today, we are proud to unveil an even greater milestone - MSI motherboards now support memory capacities of up to 256 GB for 4 DIMMs motherboards and 128 GB for 2 DIMMs motherboards. This significant enhancement empowers DIY enthusiasts with unparalleled flexibility to optimize multitasking capabilities and ensures a seamless computing experience.

This accomplishment underscores the strong collaboration between MSI and leading memory brands to achieve enhanced performance and remarkable milestones. The partnered memory for this achievement is Kingston FURY Renegade DDR5 memory, offering an impressive 64 GB capacity per module. Built on Micron's industry-leading 1β (1-beta) technology, enables new capacities not seen before for dual channel PCs.

TrendForce reports a pivotal shift in the NAND Flash market for 3Q23, primarily driven by Samsung's strategic decision to reduce production. Initially, the market was clouded by uncertainty regarding end-user demand and fears of a subdued peak season, prompting buyers to adopt a conservative approach with low inventory and slow procurement. However, as market leaders like Samsung implemented substantial production cuts, buyers' attitudes shifted toward a more aggressive procurement strategy in anticipation of a market supply decrease. This led to a stabilization and even an uptick in NAND Flash contract prices by quarter-end, driving a 3% QoQ increase in bit shipments and culminating in a total revenue of US$9.229 billion, marking an approximate 2.9% increase.

The story unfolds with Kioxia and Micron—the only two to witness a dip in revenue rankings this quarter—while Samsung maintained its robust performance. Despite sluggish demand in the server sector, Samsung's fortunes rebounded thanks to a boost in consumer electronics, especially with high-capacity products in PCs and smartphones. Samsung emerged from a trough in Q3, with strategic inventory replenishments fueling further strategic stocking, and a shift in operational focus toward maximizing profit. This led to a minor 1-3% decrease in shipped bits, but a 1-3% increase in ASP, stabilizing Q3 NAND Flash revenue at US$2.9 billion.

Micron Technology, Inc., today announced it is shipping the Micron 3500 NVMe SSD, which leverages its 232-layer NAND to power demanding workloads for business applications, scientific computing, cutting-edge gaming and content creation, pushing the limits of what is possible. The Micron 3500 SSD, available in the M.2 form factor and with capacities up to 2 TB, provides a superior user experience over the competition as proven by its best-in-class SPECwpcsm performance, including an up to 71% improvement for product development applications.

"At Micron, we are focused on delivering exceptional products that best meet the rigorous needs of end-users," said Prasad Alluri, Micron's vice president and general manager of Client Storage. "With impressive specs like a remarkable 132% improvement in scientific computing benchmark scores, the 3500 SSD will turn your next PC or workstation into a powerhouse to enable insights and empower creativity."

TrendForce investigations reveal a significant leap in the DRAM industry for 3Q23, with total revenues soaring to US$13.48 billion—marking 18% QoQ growth. This surge is attributed to a gradual resurgence in demand, prompting buyers to re-energize their procurement activities. Looking ahead to Q4, while suppliers are firmly set on price hikes, with DRAM contract prices expected to rise by approximately 13-18%, demand recovery will not be as robust as in previous peak seasons. Overall, while there is demand for stockpiling, procurement for the server sector remains tentative due to high inventory levels, suggesting limited growth in DRAM industry shipments for Q4.

Three major manufacturers witnessed Q3 revenue growth. Samsung's revenue increased by about 15.9% to US$5.25 billion thanks to stable demand for high-capacity products fueled by AI advancements and the rollout of its 1alpha nm DDR5. SK hynix showcased the most notable growth among manufacturers with a 34.4% increase, reaching about US$4.626 billion and significantly narrowing its market share gap with Samsung to less than 5%. Micron's revenue rose by approximately 4.2% to US$3.075 billion—despite a slight drop in ASP—supported by an upswing in demand and shipment volumes.

TrendForce's latest research into the HBM market indicates that NVIDIA plans to diversify its HBM suppliers for more robust and efficient supply chain management. Samsung's HBM3 (24 GB) is anticipated to complete verification with NVIDIA by December this year. The progress of HBM3e, as outlined in the timeline below, shows that Micron provided its 8hi (24 GB) samples to NVIDIA by the end of July, SK hynix in mid-August, and Samsung in early October.

Given the intricacy of the HBM verification process—estimated to take two quarters—TrendForce expects that some manufacturers might learn preliminary HBM3e results by the end of 2023. However, it's generally anticipated that major manufacturers will have definite results by 1Q24. Notably, the outcomes will influence NVIDIA's procurement decisions for 2024, as final evaluations are still underway.

Micron Technology, Inc. (Nasdaq: MU), today demonstrated its industry leadership by announcing its 32Gb monolithic die-based 128 GB DDR5 RDIMM memory featuring best-in-class performance of up to 8000 MT/s to support data center workloads today and into the future. These high-capacity, high-speed memory modules are engineered to meet the performance and data-handling needs of a wide range of mission-critical applications in data center and cloud environments, including artificial intelligence (AI), in-memory databases (IMDBs) and efficient processing for multithreaded, multicore count general compute workloads.

Powered by Micron's industry-leading 1β (1-beta) technology, the 32Gb DDR5 DRAM die-based 128 GB DDR5 RDIMM memory delivers the following enhancements over competitive 3DS through-silicon via (TSV) products:

• more than 45% improved bit density
• up to 24% improved energy efficiency
• up to 16% lower latency
• up to a 28% improvement in AI training performance

Micron Technology, Inc. (Nasdaq: MU), today announced the availability of the Crucial T500 Gen 4 NVMe SSD as an expansion of its award-winning NVMe solid-state drive (SSD) portfolio. The Crucial T500 SSD is a best-in-class PCIe 4.0 NVMe drive, which leverages Micron's advanced 232-layer 3D NAND technology with industry-leading NAND I/O speeds of 2.4 gigabytes per second (GB/s) and is engineered to improve performance for console and PC gamers, photo and video editors and content creators. Available in two options, the T500 SSD with the heatsink is specifically designed for platforms like the PlayStation 5 (PS5) and PC gaming rigs, while the version without the heatsink fits well in laptops, desktops and workstations.

The T500 offers up to a 40% higher performance-to-power ratio, and speeds that are two times faster than the previous Gen 3 NVMe SSD offering. With lightning-fast sequential read and write speeds up to 7,400 MB/s and 7,000 MB/s respectively, Crucial T500 SSDs enable gamers to load games up to 16% faster, get quicker game texture renders and reduced CPU utilization with Microsoft DirectStorage. Likewise, it is easy to install and has up to 2 TB of storage - making it perfect for PS5 upgrades or UHD/8K+ videos. The T500 also delivers up to 42% faster performance in content creation applications, allowing users to run heavy workloads and render photos or videos faster.

Micron Technology, Inc., announced today that it is now shipping production samples of its low-power double data rate 5X (LPDDR5X) memory - the industry's only 1β (1-beta) mobile-optimized memory - for use with Qualcomm Technologies, Inc.'s latest flagship mobile platform, Snapdragon 8 Gen 3. Running at the world's fastest speed grade of 9.6 gigabits per second (Gbps), Micron LPDDR5X provides the mobile ecosystem with the fast performance needed to unlock generative artificial intelligence (AI) at the edge. Enabled by its innovative, industry-leading 1β process node technology, Micron LPDDR5X also delivers advanced power-saving capabilities for mobile users.

"Generative AI is poised to unleash unprecedented productivity, ease of use, and personalization for smartphone users by delivering the power of large language models to flagship mobile phones," said Mark Montierth, corporate vice president and general manager of Micron's Mobile Business Unit. "Micron's 1β LPDDR5X combined with Qualcomm Technologies' AI-optimized Snapdragon 8 Gen 3 Mobile Platform empowers smartphone manufacturers with the next-generation performance and power efficiency essential to enabling revolutionary AI technology at the edge."

Micron Technology, Inc., announced today that its low-power double data rate 5X (LPDDR5X) DRAM and Universal Flash Storage (UFS) 3.1 embedded solutions are now qualified on Qualcomm Technologies' latest extended reality (XR) platform, Snapdragon XR2 Gen 2 Platform. Micron's LPDDR5X and UFS 3.1 deliver next-level speed, performance and low-power consumption in the smallest form factors needed to support untethered mixed reality (MR) and virtual reality (VR) devices. Micron's LPDDR5X is the company's most advanced low-power memory, delivering power efficiency enabled by its innovative 1-alpha process node technology and JEDEC power advancements.

The global augmented reality (AR) and VR market is expected to reach $200 billion by 2030, growing at a compound annual growth rate of 24% from 2021.1 Micron's embedded products provide robust XR-ready solutions to accelerate customer adoption and realize the potential of this expanding market. Enabling concurrent processing across multiple applications and sensors, Micron's LPDDR5X and UFS 3.1 seamlessly integrate constantly changing presence, position and sensory perception in the metaverse to create realistic, immersive experiences for VR users.

Micron Technology, Inc., today announced the Micron 7500 NVMe SSD for data center workloads. The 7500 SSD is the world's only mainstream data center SSD to feature 200+ layer NAND, utilizing Micron's 232-layer NAND and enabling up to 242% better random write performance than competitive drives. The SSD also delivers sub-1 millisecond (1 ms) latency for 6x9s quality-of-service (QoS) in mainstream drives, creating a new, industry-leading class of SSDs perfectly suited to deliver the consistency required in the cloud. The Micron 7500 SSD is designed to meet the demands of storage-intensive data center workloads, such as artificial intelligence (AI), databases, content delivery, real-time analytics, social media platforms, cloud computing and virtualization. Its remarkable QoS and performance provide rapid, reliable responsiveness for these demanding workloads. For example, the drive improves RocksDB performance by up to 2.1 times versus competitive SSDs.

"The Micron 7500 SSD is a game-changer for data center workloads, delivering blazing-fast performance, exceptional QoS reliability and advanced security unmatched by any other SSD in its class," said Alvaro Toledo, vice president and general manager of Micron's Data Center Storage group. "Thanks to Micron's industry-leading 232-layer NAND technology, we have achieved a breakthrough in latency, enabling response times below 1 ms for 6x9s QoS in mainstream drives. This means our customers can run their data-intensive workloads faster, more efficiently and with more predictability than ever before."

Micron Technology, Inc., one of the world's largest semiconductor companies, today marked a historic day with the opening of its new cutting-edge assembly and test facility in Batu Kawan, Penang, alongside the celebration of Micron's 45th anniversary. A ceremony officiated by Chief Minister of Penang, Yang Amat Berhormat Tuan Chow Kon Yeow, underscored the regional significance of Micron's expansion, highlighting the company's four and a half decades of innovation and excellence.

Micron previously invested $1 billion and will add up to another billion including construction and full equipping of this new facility over the next few years in Penang to increase factory space to a total of 1.5 million square feet. This expansion enables Micron Malaysia to boost production output and further strengthen its assembly and test capabilities, allowing it to supply leading-edge NAND, PCDRAM and SSD modules to meet the growing demand for transformative technologies such as artificial intelligence and autonomous or electric vehicles.

Micron Technology, Inc., today announced it has extended its industry-leading 1β (1-beta) process node technology with the introduction of 16Gb DDR5 memory. With demonstrated in-system functionality at speeds up to 7,200 MT/s, Micron's 1β DDR5 DRAM is now shipping to all data center and PC customers. Micron's 1β-based DDR5 memory with advanced high-k CMOS device technology, 4-phase clocking and clock-sync provides up to a 50% performance uplift and 33% improvement in performance per watt over the previous generation.

As CPU core counts increase to meet the demands of data center workloads, the need for higher memory bandwidth and capacities grows significantly to overcome the 'memory wall' challenge while optimizing the total cost of ownership for customers. Micron's 1β DDR5 DRAM allows computational capabilities to scale with higher performance enabling applications like artificial intelligence (AI) training and inference, generative AI, data analytics, and in-memory databases (IMDB) across data center and client platforms. The new 1β DDR5 DRAM product line offers current module densities in speeds ranging from 4,800 MT/s up to 7,200 MT/s for use in data center and client applications.

Micron Technology, Inc., one of the world's largest semiconductor companies and the only U.S.-based manufacturer of memory, will today celebrate the start of construction on the nation's first new memory manufacturing fab in 20 years. Company executives will join Idaho Governor Brad Little, Boise Mayor Lauren McLean, other community partners and team members to mark the milestone with a ceremonial concrete pour at Micron's Boise headquarters on the 45th anniversary of the company's founding.

Just over a year ago, Micron announced its plans to invest approximately $15 billion through the end of the decade to construct a new fab for leading-edge memory manufacturing, to be co-located with the company's R&D epicenter in its hometown of Boise. Through the lifespan of the project, Micron will directly infuse $15.3 billion into the Idaho economy and directly spend $13.0 billion with Idaho businesses. The project will create over 17,000 new Idaho jobs, including 2,000 Micron direct jobs, furthering the need for a diverse, highly skilled workforce.

Micron Technology Inc. today announced results for its fourth quarter and full year of fiscal 2023, which ended August 31, 2023.

"During fiscal 2023, amid a challenging environment for the memory and storage industry, Micron sustained technology leadership, launched a significant number of leading-edge products, and took decisive actions on supply and cost," said Micron Technology President and CEO Sanjay Mehrotra. "Our 2023 performance positions us well as a market recovery takes shape in 2024, driven by increasing demand and disciplined supply. We look forward to record industry TAM revenue in 2025 as AI proliferates from the data center to the edge."

Investments in capital expenditures, net were $1.01 billion for the fourth quarter of 2023 and $7.01 billion for the full year of 2023, which resulted in adjusted free cash flows of negative $758 million for the fourth quarter of 2023 and negative $5.45 billion for the full year of 2023. Micron ended the year with cash, marketable investments, and restricted cash of $10.52 billion. On September 27, 2023, Micron's Board of Directors declared a quarterly dividend of $0.115 per share, payable in cash on October 25, 2023, to shareholders of record as of the close of business on October 10, 2023.

TSMC today announced the new 3Dblox 2.0 open standard and major achievements of its Open Innovation Platform (OIP) 3DFabric Alliance at the TSMC 2023 OIP Ecosystem Forum. The 3Dblox 2.0 features early 3D IC design capability that aims to significantly boost design efficiency, while the 3DFabric Alliance continues to drive memory, substrate, testing, manufacturing, and packaging integration. TSMC continues to push the envelope of 3D IC innovation, making its comprehensive 3D silicon stacking and advanced packaging technologies more accessible to every customer.

"As the industry shifted toward embracing 3D IC and system-level innovation, the need for industry-wide collaboration has become even more essential than it was when we launched OIP 15 years ago," said Dr. L.C. Lu, TSMC fellow and vice president of Design and Technology Platform. "As our sustained collaboration with OIP ecosystem partners continues to flourish, we're enabling customers to harness TSMC's leading process and 3DFabric technologies to reach an entirely new level of performance and power efficiency for the next-generation artificial intelligence (AI), high-performance computing (HPC), and mobile applications."