SMIC Reportedly Ramping Up 5 Nanometer Production Line in Shanghai
Semiconductor Manufacturing International Corp (SMIC) is preparing new semiconductor production lines at its Shanghai facilities according to a fresh Reuters report—China's largest contract chip maker is linked to next generation Huawei SoC designs, possibly 5 nm-based Kirin models. SMIC's newest Shanghai wafer fabrication site was an expensive endeavor—involving a $8.8 billion investment—but their flagship lines face a very challenging scenario with new phases of mass production. Huawei, a key customer, is expected to "upgrade" to a 5 nm process for new chip designs—their current flagship, Kirin 9000S, is based on a SMIC 7 nm node. Reuter's industry sources believe that the foundry's current stable of "U.S. and Dutch-made equipment" will be deployed to "produce 5-nanometer chips."
Revised trade rulings have prevented ASML shipping advanced DUV machinery to mainland China manufacturing sites—SMIC workers have reportedly already repurposed the existing inventory of lithography equipment for next-gen pursuits. Burn Lin (ex-TSMC), a renowned "chip guru," believes that it is possible to mass produce 5 nm product on slightly antiquated gear (previously used for 7 nm)—but the main caveats being increased expense and low yields. According to a DigiTimes Asia report, mass production of a 5 nm SoC on SMIC's existing DUV lithography would require four-fold patterning in a best case scenario.
Revised trade rulings have prevented ASML shipping advanced DUV machinery to mainland China manufacturing sites—SMIC workers have reportedly already repurposed the existing inventory of lithography equipment for next-gen pursuits. Burn Lin (ex-TSMC), a renowned "chip guru," believes that it is possible to mass produce 5 nm product on slightly antiquated gear (previously used for 7 nm)—but the main caveats being increased expense and low yields. According to a DigiTimes Asia report, mass production of a 5 nm SoC on SMIC's existing DUV lithography would require four-fold patterning in a best case scenario.