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Intel S3700 400 GB

400 GB
Capacity
PC29AS21CA0
Controller
MLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Intel S3700 was a solid-state drive in the 2.5" form factor, launched in January 2015, that is no longer in production. It was available in capacities ranging from 400 GB to 800 GB. This page reports specifications for the 400 GB variant. With the rest of the system, the Intel S3700 interfaces using a SATA 6 Gbps connection. The SSD controller is the PC29AS21CA0 from Intel, a DRAM cache chip is available. Intel has installed MLC NAND flash on the S3700, the flash chips are made by Intel. The S3700 is rated for sequential read speeds of up to 500 MB/s and 460 MB/s write; random IOPS reach up to 75K for reads and 36K for writes.
At its launch, the SSD was priced at 940 USD. The warranty length is set to five years, which is an excellent warranty period. Intel guarantees an endurance rating of 7300 TBW, an extremely high value, making this drive fit for demanding enterprise applications.

Solid-State-Drive

Capacity: 400 GB
Variants: 400 GB 800 GB
Overprovisioning: 139.5 GB / 37.4 %
Production: End-of-life
Released: Jan 2015
Price at Launch: 940 USD
Part Number: SSDSC2BA400G3
Market: Enterprise

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.60 W (Idle)
5.2 W (Avg)
7.7 W (Max)

Controller

Manufacturer: Intel
Name: PC29AS21CA0
Architecture: ARM
Frequency: 400 MHz
Flash Channels: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Intel
Name: L74 (25nm)
Type: MLC
Technology: Planar
Speed: 50 MT/s .. 200 MT/s
Capacity: 16 chips @ 256 Gbit
ONFI: 2.2
Topology: Charge Trap
Process: 25 nm
Die Size: 167 mm²
(0.4 Gbit/mm²)
Dies per Chip: 4 dies @ 64 Gbit
Planes per Die: 2
Read Time (tR): 50 µs
Program Time (tProg): 1300 µs
Block Erase Time (tBERS): 3.0 ms
Die Read Speed: 320 MB/s
Die Write Speed: 12 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 8 KB
Block Size: 256 Pages
Plane Size: 2048 Blocks

DRAM Cache

Type: DDR3-1066 CL7
Name: Samsung K4B4G0846B-HCK0 (B-Die)
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx8

Performance

Sequential Read: 500 MB/s
Sequential Write: 460 MB/s
Random Read: 75,000 IOPS
Random Write: 36,000 IOPS
Endurance: 7300 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 10.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Programming Throughput: Estimated 12.3 MB/s

Jun 3rd, 2024 07:38 EDT change timezone

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