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Kioxia Exceria G2 2 TB

2 TB
Capacity
Phison E12S
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Front
SSD Controller
Controller
The Kioxia Exceria G2 is a solid-state drive in the M.2 2280 form factor, launched in July 2021. It is available in capacities ranging from 500 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Kioxia Exceria G2 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12S-32 from Phison, a DRAM cache chip is available. Kioxia has installed 112-layer TLC NAND flash on the Exceria G2, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The Exceria G2 is rated for sequential read speeds of up to 2,100 MB/s and 1,700 MB/s write; random IO reaches 360K IOPS for read and 400K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Kioxia guarantees an endurance rating of 800 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 500 GB 1 TB 2 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: Jul 2021
Part Number: LRC20Z002TG8
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown (Idle)
Unknown (Avg)
5.3 W (Max)

Controller

Manufacturer: Phison
Name: PS5012-E12S-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS5
Type: TLC
Technology: 112-layer
Speed: 1200 MT/s
Capacity: 4 chips @ 4 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 2
Word Lines: 128 per NAND String
87.5% Vertical Efficiency
Read Time (tR): 56 µs
Endurance:
(up to)		 3000 P/E Cycles
(100000 in SLC Mode)
Page Size: 16 KB
Block Size: 1344 Pages

DRAM Cache

Type: DDR4-2666 CL19
Name: SAMSUNG K4ABG165WC-BCTD
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 2,100 MB/s
Sequential Write: 1,700 MB/s
Random Read: 360,000 IOPS
Random Write: 400,000 IOPS
Endurance: 800 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Notes

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. The difference between this revision and the E12 revision is that this has a nichel IHS to improve the temperature, a smaller size, smaller node (12nm TSMC FinFET) and this works with less DRAM capacity.

NAND Die:

Typ. Endurance: 1700 ~ 3000 P.E.C.
Typ. pSLC Endurance: 50.000 ~ 100.000 P.E.C.
Jun 3rd, 2024 07:00 EDT change timezone

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