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Corsair MP510 3.8 TB (Kioxia BiCS4)

3.8 TB
Capacity
Phison E12
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

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Package
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Package
DRAM
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DRAM
Flash
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Flash
SSD Controller
Controller
NAND Die
NAND Die
The Corsair MP510 is a solid-state drive in the M.2 2280 form factor, launched on October 16th, 2016. It is only available in the 3.8 TB capacity listed on this page. With the rest of the system, the Corsair MP510 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12-27 from Phison, a DRAM cache chip is available. Corsair has installed 96-layer TLC NAND flash on the MP510, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The MP510 is rated for sequential read speeds of up to 3,480 MB/s and 3,000 MB/s write; random IOPS reach up to 580K for reads and 680K for writes.
At its launch, the SSD was priced at 760 USD. The warranty length is set to five years, which is an excellent warranty period. Corsair guarantees an endurance rating of 6820 TBW, a good value.

Solid-State-Drive

Capacity: 3.8 TB (3840 GB)
Hardware Versions:
Overprovisioning: 519.7 GB / 14.5 %
Production: Active
Released: Oct 16th, 2016
Price at Launch: 760 USD
Part Number: CSSD-F4000GBMP510
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5012-E12-27
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Part Number: TA8HG65AWV
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 8 chips @ 4 Tbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR4-1866 CL13
Name: NANYA NT5CC256M16ER-EK
Capacity: 1024 MB
(2x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 3,480 MB/s
Sequential Write: 3,000 MB/s
Random Read: 580,000 IOPS
Random Write: 680,000 IOPS
Endurance: 6820 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 1.0
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience.

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

Jun 1st, 2024 13:02 EDT change timezone

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