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DapuStor Haishen3 H3200 3.8 TB

3.8 TB
Capacity
88SS1098
Controller
TLC
Flash
PCIe 3.0 x4
Interface
U.2
Form Factor
PCB Front
Zhuanlan
PCB Front
DRAM
Zhuanlan
DRAM
Flash
Zhuanlan
Flash
SSD Controller
Controller
NAND Die
NAND Die
The DapuStor Haishen3 H3200 is a solid-state drive in the U.2 form factor, launched in 2020. It is only available in the 3.8 TB capacity listed on this page. With the rest of the system, the DapuStor Haishen3 H3200 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the 88SS1098 Zao from Marvell, a DRAM cache chip is available. DapuStor has installed 96-layer TLC NAND flash on the Haishen3 H3200, the flash chips are made by Toshiba. The Haishen3 H3200 is rated for sequential read speeds of up to 3,500 MB/s and 3,100 MB/s write; random IO reaches 820K IOPS for read and 130K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. DapuStor guarantees an endurance rating of 7008 TBW, a high value.

Solid-State-Drive

Capacity: 3.8 TB (3840 GB)
Overprovisioning: 519.7 GB / 14.5 %
Production: Active
Released: 2020
Part Number: DPH311T4T003T8
Market: Enterprise

Physical

Form Factor: U.2
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Marvell
Name: 88SS1098 Zao
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Part Number: TH58LJT1V24BA8H
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 800 MT/s
Capacity: 16 chips @ 2 Tbit
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Dies per Chip: 8 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 59 µs
Program Time (tProg): 625 µs
Die Read Speed: 551 MB/s
Die Write Speed: 56 MB/s
Endurance:
(up to)
1500 P/E Cycles
(3000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1980 Blocks

DRAM Cache

Type: DDR4-2666 CL19
Name: NANYA A-Die NT5AD1024M8A3-HR
Capacity: 5120 MB
(5x 1024 MB)
Organization: 8Gx8

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 3,100 MB/s
Random Read: 820,000 IOPS
Random Write: 130,000 IOPS
Endurance: 7008 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 1.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

NAND Die:

Read latency tR: 58 µs (ABL)
Performance:
tPROG (typical) - 2100 µs (MSB)
tR (typical) - 59 µs
tPROG (ower page) ~ 200 µs
Estimated tPROG between 625 ~ 975 µs

Jun 1st, 2024 14:09 EDT change timezone

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