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Enmotus FuzeDrive P200 1.6 TB

1.6 TB
Capacity
Phison E12S
Controller
QLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Front
Package
Tweaktown
Package
PCB Front
Tom's Hardware
PCB Front
PCB Back
Tom's Hardware
PCB Back
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Enmotus FuzeDrive P200 is a solid-state drive in the M.2 2280 form factor, launched on May 4th, 2021. It is available in capacities ranging from 900 GB to 1.6 TB. This page reports specifications for the 1.6 TB variant. With the rest of the system, the Enmotus FuzeDrive P200 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12S-32 from Phison, a DRAM cache chip is available. Enmotus has installed 96-layer QLC NAND flash on the FuzeDrive P200, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 510 GB, once it is full, writes complete at 200 MB/s. The FuzeDrive P200 is rated for sequential read speeds of up to 3,470 MB/s and 3,000 MB/s write; random IO reaches 372K IOPS for read and 402K for writes.
At its launch, the SSD was priced at 350 USD. The warranty length is set to five years, which is an excellent warranty period. Enmotus guarantees an endurance rating of 3600 TBW, a high value.

Solid-State-Drive

Capacity: 1.6 TB (1600 GB)
Variants: 900 GB 1.6 TB
Overprovisioning: Unknown
Production: Active
Released: May 4th, 2021
Price at Launch: 350 USD
Part Number: P200-1600/128
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.62 W (Idle)
3.1 W (Avg)
5.5 W (Max)

Controller

Manufacturer: Phison
Name: PS5012-E12S-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: N28A FortisFlash
Part Number: IA7HG66AWA
Type: QLC
Technology: 96-layer
Speed: 50 MT/s .. 800 MT/s
Capacity: 4 chips @ 4 Tbit
ONFI: 4.0
Topology: Floating Gate
Die Size: 115 mm²
(8.9 Gbit/mm²)
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 4
Read Time (tR): 90 µs
Program Time (tProg): 2080 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 711 MB/s
Die Write Speed: 30 MB/s
Endurance:
(up to)		 1500 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 4608 Pages
Plane Size: 492 Blocks

DRAM Cache

Type: DDR3L-1866
Name: NANYA NT5CC256M16ER-EK
Capacity: 1024 MB
(2x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 3,470 MB/s
Sequential Write: 3,000 MB/s
Random Read: 372,000 IOPS
Random Write: 402,000 IOPS
Endurance: 3600 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 1.2
SLC Write Cache: approx. 510 GB
(382 GB Dynamic
+ 128 GB Static)
Speed when Cache Exhausted: approx. 200 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

Total RAW capacity: 2 TiB (2048 MiB)
QLC NAND Capacity: 1316 GiB
Static SLC Cache: 128 GiB
Dynamic SLC Cache: 382 GiB
Total Usable Capacity: 1440 GiB
By operating in this hybrid design, the endurance jumped from 600 - 1000 cycles on the native QLC base Flash to 30.000 Cyles in the pSLC Mode.
The FuzeDrive leverages the advantages that both dynamic and Static high endurance SLC modes have to offer by splitting the device into two LBA zones. The first LBA range is the high endurance zone (Static), and it sacrifices 512GB of the raw flash to provide 128GB of Static SLC, but the user can’t access this area directly. The remaining QLC flash in the second LBA zone operates in dynamic SLC mode and is made available to the end user.

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. The difference between this revision and the E12 revision is that this has a nichel IHS to improve the temperature, a smaller size, smaller node (12nm TSMC FinFET) and this works with less DRAM capacity.

NAND Die:

tPROG with overhead: 2080 µs (Avg 30 MB/s per die)
Jun 1st, 2024 11:44 EDT change timezone

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