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Intel 660p 2 TB

2 TB
Capacity
SM2263EN
Controller
QLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Back
Back
Package
Package
DRAM
Tom's Hardware
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The Intel 660p was a solid-state drive in the M.2 2280 form factor, launched on August 9th, 2018, that is no longer in production. It was available in capacities ranging from 512 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Intel 660p interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2263EN from Silicon Motion, a DRAM cache chip is available. Intel has installed 64-layer QLC NAND flash on the 660p, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 280 GB, once it is full, writes complete at 175 MB/s. The 660p is rated for sequential read speeds of up to 1,800 MB/s and 1,800 MB/s write; random IOPS reach up to 220K for reads and 220K for writes.
At its launch, the SSD was priced at 204 USD. The warranty length is set to five years, which is an excellent warranty period. Intel guarantees an endurance rating of 400 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Variants: 512 GB 1 TB 2 TB
Overprovisioning: 140.7 GB / 7.4 %
Production: End-of-life
Released: Aug 9th, 2018
Price at Launch: 204 USD
Part Number: SSDPEKNW020T8X1
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.68 W (Idle)
2.8 W (Avg)
4.3 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2263EN
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Frequency: 650 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: N18A FortisFlash
Rebranded: 29F04T2ANCQHI
Type: QLC
Technology: 64-layer
Speed: 50 MT/s .. 800 MT/s
Capacity: 4 chips @ 4 Tbit
ONFI: 4.0
Topology: Floating Gate
Process: 20 nm
Die Size: 157 mm²
(6.5 Gbit/mm²)
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 74 per NAND String
86.5% Vertical Efficiency
Read Time (tR): 127 µs
Program Time (tProg): 3000 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 503 MB/s
Die Write Speed: 21 MB/s
Endurance:
(up to)
1500 P/E Cycles
Page Size: 16 KB
Block Size: 3072 Pages
Plane Size: 684 Blocks

DRAM Cache

Type: DDR3L-1600 CL11
Name: NANYA NT5CC128M16IP-DI
Capacity: 256 MB
(1x 256 MB)
Organization: 2Gx16

Performance

Sequential Read: 1,800 MB/s
Sequential Write: 1,800 MB/s
Random Read: 220,000 IOPS
Random Write: 220,000 IOPS
Endurance: 400 TBW
Warranty: 5 Years
MTBF: 1.6 Million Hours
Drive Writes Per Day (DWPD): 0.1
SLC Write Cache: approx. 280 GB
(dynamic only)
Speed when Cache Exhausted: approx. 175 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

Controller speed not confirmed, it can vary from drive to drive.

NAND Die:

tR Average as pSLC mode: 52 µs
tPROG with overhead: 3000 µs (Avg 21.3 MB/s per die)

May 17th, 2024 19:51 EDT change timezone

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