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Intel 665p 1 TB

1 TB
Capacity
SM2263EN
Controller
QLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Back
Back
Package
Package
PCB Front
PCB Front
DRAM
DRAM
Flash
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Intel 665p was a solid-state drive in the M.2 2280 form factor, launched on November 25th, 2019, that is no longer in production. It was available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Intel 665p interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2263EN from Silicon Motion, a DRAM cache chip is available. Intel has installed 96-layer QLC NAND flash on the 665p, the flash chips are made by Intel. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 140 GB, once it is full, writes complete at 185 MB/s. The 665p is rated for sequential read speeds of up to 2,000 MB/s and 1,925 MB/s write; random IOPS reach up to 160K for reads and 250K for writes.
At its launch, the SSD was priced at 125 USD. The warranty length is set to five years, which is an excellent warranty period. Intel guarantees an endurance rating of 300 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 1 TB 2 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: End-of-life
Released: Nov 25th, 2019
Price at Launch: 125 USD
Part Number: SSDPEKNW010T9X1
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.65 W (Idle)
2.5 W (Avg)
3.4 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2263EN
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Frequency: 650 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Intel
Name: N28A
Rebranded: 29F04T2ANCQJI
Type: QLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 2 chips @ 4 Tbit
ONFI: 4.0
Topology: Floating Gate
Die Size: 115 mm²
(8.9 Gbit/mm²)
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 4
Decks per Die: 2
Read Time (tR): 90 µs
Program Time (tProg): 2080 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 711 MB/s
Die Write Speed: 31 MB/s
Endurance:
(up to)
1500 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 4608 Pages
Plane Size: 492 Blocks

DRAM Cache

Type: DDR3L-1600 CL11
Name: WINBOND W632GU6MB-12
Capacity: 256 MB
(1x 256 MB)
Organization: 2Gx16

Performance

Sequential Read: 2,000 MB/s
Sequential Write: 1,925 MB/s
Random Read: 160,000 IOPS
Random Write: 250,000 IOPS
Endurance: 300 TBW
Warranty: 5 Years
MTBF: 1.6 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: approx. 140 GB
(dynamic only)
Speed when Cache Exhausted: approx. 185 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Pyrite
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

Controller speed not confirmed, it can vary from drive to drive.

Jun 1st, 2024 14:04 EDT change timezone

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