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Intel X25-M G2 160 GB

160 GB
Capacity
PC29AS21BA0
Controller
MLC
Flash
SATA 3 Gbps
Interface
2.5"
Form Factor
Front
Frontal
Frontal
PCB Front
Anandtech
PCB Front
PCB Back
Anandtech
PCB Back
Flash
Anandtech
Flash
DRAM
Anandtech
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The Intel X25-M G2 was a solid-state drive in the 2.5" form factor, launched on November 8th, 2010, that is no longer in production. It was available in capacities ranging from 80 GB to 160 GB. This page reports specifications for the 160 GB variant. With the rest of the system, the Intel X25-M G2 interfaces using a SATA 3 Gbps connection. The SSD controller is the PC29AS21BA0 from Intel, a DRAM cache chip is available. Intel has installed MLC NAND flash on the X25-M G2, the flash chips are made by Micron. The X25-M G2 is rated for sequential read speeds of up to 250 MB/s and 100 MB/s write; random IO reaches 35K IOPS for read and 8K for writes.
The SSD's price at launch is unknown. The TBW rating for the Intel X25-M G2 160 GB is unknown, too.

Solid-State-Drive

Capacity: 160 GB
Variants: 80 GB 160 GB
Overprovisioning: 11.0 GB / 7.4 %
Production: End-of-life
Released: Nov 8th, 2010
Part Number: SSDSA2MH160G2C1
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 3 Gbps
Protocol: AHCI
Power Draw: Unknown

Controller

Manufacturer: Intel
Name: PC29AS21BA0
Architecture: ARM
Flash Channels: 10
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: 34nm
Part Number: 29F16B08JANDI
Type: MLC
Technology: Planar
Speed: 166 MT/s
Capacity: 10 chips @ 128 Gbit
ONFI: 2.1
Topology: Floating Gate
Process: 34 nm
Die Size: 172 mm²
(0.2 Gbit/mm²)
Dies per Chip: 4 dies @ 32 Gbit
Planes per Die: 2
Read Time (tR): 50 µs
Program Time (tProg): 900 µs
Block Erase Time (tBERS): 3.0 ms
Die Read Speed: 160 MB/s
Die Write Speed: 9 MB/s
Endurance:
(up to)		 5000 P/E Cycles
Page Size: 4 KB
Block Size: 256 Pages
Plane Size: 2048 Blocks

DRAM Cache

Type: DDR-133 CL3
Capacity: 32 MB
(1x 32 MB)
Organization: 256Mx16

Performance

Sequential Read: 250 MB/s
Sequential Write: 100 MB/s
Random Read: 35,000 IOPS
Random Write: 8,600 IOPS
Endurance: Unknown
Warranty: Unknown
MTBF: 1.5 Million Hours
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

NAND Die:

The device is divided into two 16Gb planes utilized individually in single-plane
operation or simultaneously in dual-plane operation. Each plane contains
4096 blocks. Using a mixed-string driver and center-page-buffer architecture,
both the wordline and bitline RC is divided in half, which mitigates performance
degradation from doubling the density and transitioning to a smaller
lithography. Thus, each 16Gb plane is sub-divided into 4Gb partitions. The
block size is 512kB as defined by 128 pages and 4kB page size.
Jun 1st, 2024 12:00 EDT change timezone

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