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Klevv CRAS C930 1 TB

1 TB
Capacity
IG5236
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Front
SSD Controller
Controller
NAND Die
NAND Die
The Klevv CRAS C930 is a solid-state drive in the M.2 2280 form factor, launched on November 23rd, 2022. It is available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Klevv CRAS C930 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the IG5236 (Rainier) from InnoGrit, a DRAM cache chip is available. Klevv has installed 176-layer TLC NAND flash on the CRAS C930, the flash chips are made by SK Hynix. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The CRAS C930 is rated for sequential read speeds of up to 7,400 MB/s and 6,400 MB/s write; random IO reaches 1000K IOPS for read and 1000K for writes.
At its launch, the SSD was priced at 80 USD. The warranty length is set to five years, which is an excellent warranty period. Klevv guarantees an endurance rating of 750 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 1 TB 2 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: Nov 23rd, 2022
Price at Launch: 80 USD
Part Number: K01TBM2SP0-C93
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: InnoGrit
Name: IG5236 (Rainier)
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 8 @ 1,200 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: V7
Rebranded: Essencore
Type: TLC
Technology: 176-layer
Speed: 1600 MT/s
Capacity: 4 chips @ 2 Tbit
Toggle: 5.0
Topology: Charge Trap
Die Size: 47 mm²
(10.9 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Word Lines: 196 per NAND String
89.8% Vertical Efficiency
Read Time (tR): 50 µs
Program Time (tProg): 380 µs
Die Read Speed: 1280 MB/s
Die Write Speed: 168 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 4224 Pages
Plane Size: 1084 Blocks

DRAM Cache

Type: LPDDR4
Name: Nanya
Capacity: 1024 MB
(1x 1024 MB)

Performance

Sequential Read: 7,400 MB/s
Sequential Write: 6,400 MB/s
Random Read: 1,000,000 IOPS
Random Write: 1,000,000 IOPS
Endurance: 750 TBW
Warranty: 5 Years
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: Yes

Notes

NAND Die:

Endurance: 1.500 to 3.000 P.E.C.
tPROG withouth Overhead: ~ 380 µs (accounting for ~ 168 MB/s of throughput per die)
tPROG w/ +/- 25% Overhead: ~ 507 µs (accounting for ~ 126 MB/s of throughput per die)
NAND string : H25G9TC18488 NAND MaxPE cycles: 1500 NAND Freq : 1200 Channel number: 4 CE number : 4 Total Bank: 16 Flash Type: TLC Blocks/CE: 1084 Pages/Block: 4224 Page Size
Jun 1st, 2024 10:57 EDT change timezone

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