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Netac N930e Pro 512 GB (SM2263XT + SK Hynix V6)

512 GB
Capacity
SM2263XT
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Package
The Overclocking Page
Package
PCB Front
The Overclocking Page
PCB Front
PCB Back
The Overclocking Page
PCB Back
Flash
The Overclocking Page
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Netac N930e Pro is a solid-state drive in the M.2 2280 form factor, launched on July 22nd, 2022. It is available in capacities ranging from 128 GB to 1 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Netac N930e Pro interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2263XT from Silicon Motion, a DRAM cache is not available. Netac has installed 128-layer TLC NAND flash on the N930e Pro, the flash chips are made by SK Hynix. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 130 GB. Copying data out of the SLC cache (folding) completes at 305 MB/s. The N930e Pro is rated for sequential read speeds of up to 2,080 MB/s and 1,700 MB/s write; random IO reaches 200K IOPS for read and 200K for writes.
The SSD's price at launch is unknown. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Netac guarantees an endurance rating of 300 TBW, a good value.

Solid-State-Drive

Capacity: 512 GB
Variants: 128 GB 256 GB 512 GB 1 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: Jul 22nd, 2022
Part Number: NT01N930E-512G-E4X
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.56 W (Idle)
2.5 W (Avg)
3.0 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2263XT
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Frequency: 575 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 800 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: V6
Part Number: H25BFT8D4B8R-BDJ
Rebranded: HYG02362NATH1 (Rebranded)
Type: TLC
Technology: 128-layer
Speed: 1400 MT/s
Capacity: 2 chips @ 2 Tbit
Toggle: 4.0
Topology: Charge Trap
Die Size: 63 mm²
(8.1 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 147 per NAND String
87.1% Vertical Efficiency
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 1536 Pages
Plane Size: 722 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 2,080 MB/s
Sequential Write: 1,700 MB/s
Random Read: 200,000 IOPS
Random Write: 200,000 IOPS
Endurance: 300 TBW
Warranty: 3 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.5
SLC Write Cache: approx. 130 GB
(dynamic only)
Cache Folding Speed: 305 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

The difference between this and the non-XT revision (SM2263, SM2263G, SM2263ENG, etc.) is that this revision doesn't support the DRAM cache, in fact it uses HMB (Host Memory Buffer).

NAND Die:

Each die has 7 SGSs with 3 SGDs.

Jun 1st, 2024 12:42 EDT change timezone

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