Report an Error

Netac N950e Pro 500 GB

500 GB
Capacity
SM2262ENG
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Package
Adrenaline
Package
PCB Front
Adrenaline
PCB Front
PCB Back
Adrenaline
PCB Back
DRAM
Adrenaline
DRAM
Flash
Adrenaline
Flash
SSD Controller
Controller
The Netac N950e Pro is a solid-state drive in the M.2 2280 form factor, launched in 2020. It is available in capacities ranging from 250 GB to 2 TB. This page reports specifications for the 500 GB variant. With the rest of the system, the Netac N950e Pro interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2262ENG from Silicon Motion, a DRAM cache chip is available. Netac has installed 96-layer TLC NAND flash on the N950e Pro, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 75 GB, once it is full, writes complete at 560 MB/s. Copying data out of the SLC cache (folding) completes at 400 MB/s. The N950e Pro is rated for sequential read speeds of up to 3,500 MB/s and 2,200 MB/s write.
At its launch, the SSD was priced at 70 USD. The warranty length is set to five years, which is an excellent warranty period. The TBW rating for the Netac N950e Pro 500 GB is unknown.

Solid-State-Drive

Capacity: 500 GB
Variants: 250 GB 500 GB 1 TB 2 TB
Overprovisioning: 46.3 GB / 10.0 %
Production: Active
Released: 2020
Price at Launch: 70 USD
Part Number: NT01N950-500G-E4X
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2262ENG
Architecture: ARM 32-bit Cortex R5
Core Count: Dual-Core
Frequency: 625 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B27B FortisFlash
Rebranded: NTEF01TM3DBI1G8
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 1200 MT/s
Capacity: 4 chips @ 1 Tbit
ONFI: 4.1
Topology: Floating Gate
Dies per Chip: 2 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 108 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 87 µs
Program Time (tProg): 800 µs
Block Erase Time (tBERS): 15 ms
Die Write Speed: 84 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 3456 Pages
Plane Size: 338 Blocks

DRAM Cache

Type: DDR3-1600 CL11
Name: Samsung K4B2G1646F-BCNB (F-Die)
Capacity: 512 MB
(2x 256 MB)
Organization: 2Gx16

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 2,200 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: Unknown
Warranty: 5 Years
MTBF: 1.5 Million Hours
SLC Write Cache: approx. 75 GB
(dynamic only)
Speed when Cache Exhausted: approx. 560 MB/s
Cache Folding Speed: 400 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

Controller clock speed might vary depending on the drive, from 575 MHz to 650 MHz

NAND Die:

tPROG - 800 µs (withouh Vpp)
tPROG w/ ~ 25% Overhead: ~ 914 µs (Avg 70 MB/s per each die)

Jun 1st, 2024 13:31 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts