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SK Hynix PE8130 800 GB

800 GB
Capacity
Aquarius
Controller
TLC
Flash
PCIe 4.0 x4
Interface
U.2
Form Factor
NAND Die
NAND Die
The SK Hynix PE8130 is a solid-state drive in the U.2 form factor, launched in 2021. It is available in capacities ranging from 800 GB to 6 TB. This page reports specifications for the 800 GB variant. With the rest of the system, the SK Hynix PE8130 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Aquarius ACNT036M from SK Hynix. SK Hynix has installed 128-layer TLC NAND flash on the PE8130, the flash chips are made by SK Hynix. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The PE8130 is rated for sequential read speeds of up to 6,500 MB/s and 1,700 MB/s write; random IOPS reach up to 900K for reads and 160K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. SK Hynix guarantees an endurance rating of 4380 TBW, a very high value, making this drive a good choice for write-intensive enterprise applications.

Solid-State-Drive

Capacity: 800 GB
Variants: 800 GB 1.6 TB 3 TB 6 TB
Overprovisioning: 278.9 GB / 37.4 %
Production: Active
Released: 2021
Part Number: HFS800GEETX070N
Market: Enterprise

Physical

Form Factor: U.2
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 5.0 W (Idle)
Unknown (Avg)
13.0 W (Max)

Controller

Manufacturer: SK Hynix
Name: Aquarius ACNT036M
Architecture: ARM 32-bit Cortex-R8 without Neon
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 8 @ 1,200 MT/s
Chip Enables: 8
Controller Features: DRAM

NAND Flash

Manufacturer: SK Hynix
Name: V6
Type: TLC
Technology: 128-layer
Speed: 1400 MT/s
Capacity: Unknown
Toggle: 4.0
Topology: Charge Trap
Die Size: 63 mm²
(8.1 Gbit/mm²)
Planes per Die: 4
Decks per Die: 2
Word Lines: 147 per NAND String
87.1% Vertical Efficiency
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 1536 Pages
Plane Size: 722 Blocks

DRAM Cache

Type and Size: Unknown

Performance

Sequential Read: 6,500 MB/s
Sequential Write: 1,700 MB/s
Random Read: 900,000 IOPS
Random Write: 160,000 IOPS
Endurance: 4380 TBW
Warranty: 5 Years
MTBF: 2.5 Million Hours
Drive Writes Per Day (DWPD): 3.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Each die has 7 SGSs with 3 SGDs.

Jun 1st, 2024 12:32 EDT change timezone

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