Capacity: | 1 TB (1024 GB) |
---|---|
Overprovisioning: | 70.3 GB / 7.4 % |
Production: | Active |
Released: | Oct 31st, 2023 |
Part Number: | Unknown |
Market: | Consumer |
Form Factor: | Embedded |
---|---|
Interface: | PCIe 4.0 x4 |
Protocol: | Unknown |
Power Draw: | Unknown |
Model: | Unknown |
---|
Manufacturer: | Samsung |
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Name: | V-NAND V8 |
Part Number: | K9CMGD8J1G-TCB0 |
Type: | TLC |
Technology: | 236-layer |
Speed: | 2400 MT/s |
Capacity: | 4 chips @ 2 Tbit |
Toggle: | 5.0 |
Topology: | Charge Trap |
Die Size: | 89 mm² (5.8 Gbit/mm²) |
Dies per Chip: | 4 dies @ 512 Gbit |
Planes per Die: | 4 |
Decks per Die: | 2 |
Read Time (tR): | 40 µs |
Program Time (tProg): | 390 µs |
Block Erase Time (tBERS): | 4.0 ms |
Die Read Speed: | 1600 MB/s |
Die Write Speed: | 164 MB/s |
Page Size: | 16 KB |
Type: | DDR4-2666 |
---|---|
Name: | Samsung K4A4G085WF-BCTD |
Capacity: |
512 MB
(1x 512 MB) |
Organization: | 4Gx8 |
Sequential Read: | Unknown |
---|---|
Sequential Write: | Unknown |
Random Read: | Unknown |
Random Write: | Unknown |
Endurance: | Unknown |
Warranty: | Unknown |
SLC Write Cache: | Unknown |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | Yes |
NAND Die:Samsung lists the die as able to do 184 MB/s with an average of 347 µs tPROG, but it does manage to deliver 164 MB/s. |