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Western Digital SN750 SE 1 TB

1 TB
Capacity
Phison E19T
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Package
Package
PCB Front
Tom's Hardware
PCB Front
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Western Digital SN750 SE is a solid-state drive in the M.2 2280 form factor, launched on May 26th, 2021. It is available in capacities ranging from 250 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Western Digital SN750 SE interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5019-E19-35 from Phison, a DRAM cache is not available. Western Digital has installed 96-layer TLC NAND flash on the SN750 SE, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 70 GB, once it is full, writes complete at 990 MB/s. Copying data out of the SLC cache (folding) completes at 250 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The SN750 SE is rated for sequential read speeds of up to 3,600 MB/s and 2,830 MB/s write; random IOPS reach up to 526K for reads and 678K for writes.
At its launch, the SSD was priced at 110 USD. The warranty length is set to five years, which is an excellent warranty period. Western Digital guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 250 GB 500 GB 1 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: May 26th, 2021
Price at Launch: 110 USD
Part Number: WDS100T1B0E-00B3V0
Market: Consumer

Physical

Form Factor: M.2 2280
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 0.89 W (Idle)
3.3 W (Avg)
4.4 W (Max)

Controller

Manufacturer: Phison
Name: PS5019-E19-35
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 1,200 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Rebranded: 60982 1T00 (Rebranded by Sandisk)
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 1 chip @ 8 Tbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 3,600 MB/s
Sequential Write: 2,830 MB/s
Random Read: 526,839 IOPS
Random Write: 678,687 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 70 GB
(dynamic only)
Speed when Cache Exhausted: approx. 990 MB/s
Cache Folding Speed: 250 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Notes

Controller:

1 main core using Cortex-R5 with CoXProcessor technology (one additional core) Cortex-R5 clocked at a lower clock for better efficience.

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

Jun 1st, 2024 12:39 EDT change timezone

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