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Zircon L1 Series 128 GB (SK Hynix V6)

128 GB
Capacity
MAS1102B-B1C
Controller
TLC
Flash
PCIe 3.0 x2
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Zircon L1 Series is a solid-state drive in the M.2 2280 form factor, launched in February 2023. It is only available in the 128 GB capacity listed on this page. With the rest of the system, the Zircon L1 Series interfaces using a PCI-Express 3.0 x2 connection. The SSD controller is the MAS1102B-B1C from MaxioTech, a DRAM cache is not available. Zircon has installed 128-layer TLC NAND flash on the L1 Series, the flash chips are made by SK Hynix. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The L1 Series is rated for sequential read speeds of up to 580 MB/s and 540 MB/s write; random IOPS reach up to 58K for reads and 62K for writes.
The SSD's price at launch is unknown. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Zircon guarantees an endurance rating of 87 TBW, a good value.

Solid-State-Drive

Capacity: 128 GB
Hardware Versions:
Overprovisioning: 8.8 GB / 7.4 %
Production: Active
Released: Feb 2023
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x2
Protocol: AHCI
Power Draw: Unknown (Idle)
Unknown (Avg)
1.5 W (Max)

Controller

Manufacturer: MaxioTech
Name: MAS1102B-B1C
Architecture: ARM 32-bit
Flash Channels: 2 @ 667 MT/s
Chip Enables: 8

NAND Flash

Manufacturer: SK Hynix
Name: V6
Part Number: H25BFT8A1B8R14
Type: TLC
Technology: 128-layer
Speed: 1400 MT/s
Capacity: 2 chips @ 512 Gbit
Toggle: 4.0
Topology: Charge Trap
Die Size: 63 mm²
(8.1 Gbit/mm²)
Dies per Chip: 1 die @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 147 per NAND String
87.1% Vertical Efficiency
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 1536 Pages
Plane Size: 722 Blocks

DRAM Cache

Type: None

Performance

Sequential Read: 580 MB/s
Sequential Write: 540 MB/s
Random Read: 58,000 IOPS
Random Write: 62,500 IOPS
Endurance: 87 TBW
Warranty: 3 Years
MTBF: 1.0 Million Hours
Drive Writes Per Day (DWPD): 0.6
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Each die has 7 SGSs with 3 SGDs.

Jun 1st, 2024 13:13 EDT change timezone

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