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Aorus Gen4 7000s SSD 2 TB (E18 + B27B)

2 TB
Capacity
Phison E18
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Package
Package
PCB Front
Tom's Hardware
PCB Front
PCB Back
Greentech
PCB Back
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
The Aorus Gen4 7000s SSD is a solid-state drive in the M.2 2280 form factor, launched on January 15th, 2021. It is available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Aorus Gen4 7000s SSD interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5018-E18-41 from Phison, a DRAM cache chip is available. Aorus has installed 96-layer TLC NAND flash on the Gen4 7000s SSD, the flash chips are made by Micron. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 464 GB, once it is full, writes complete at 1800 MB/s. Copying data out of the SLC cache (folding) completes at 1150 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The Gen4 7000s SSD is rated for sequential read speeds of up to 7,000 MB/s and 6,850 MB/s write; random IOPS reach up to 650K for reads and 700K for writes.
At its launch, the SSD was priced at 390 USD. The warranty length is set to five years, which is an excellent warranty period. Aorus guarantees an endurance rating of 1400 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 1 TB 2 TB
Hardware Versions:
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: Jan 15th, 2021
Price at Launch: 390 USD
Part Number: GP-AG70S2TB
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 0.80 W (Idle)
4.6 W (Avg)
8.5 W (Max)

Controller

Manufacturer: Phison
Name: PS5018-E18-41
Architecture: ARM 32-bit Cortex-R5
Core Count: 5-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 1,600 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B27B FortisFlash
Part Number: IA7BG64AIA
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 1200 MT/s
Capacity: 8 chips @ 2 Tbit
ONFI: 4.1
Topology: Floating Gate
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 108 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 87 µs
Program Time (tProg): 800 µs
Block Erase Time (tBERS): 15 ms
Die Write Speed: 84 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 3456 Pages
Plane Size: 338 Blocks

DRAM Cache

Type: DDR4-2666 CL19
Name: SK HYNIX H5AN8G6NCJR-VKC
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 7,000 MB/s
Sequential Write: 6,850 MB/s
Random Read: 650,000 IOPS
Random Write: 700,000 IOPS
Endurance: 1400 TBW
Warranty: 5 Years
MTBF: 1.6 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 464 GB
(dynamic only)
Speed when Cache Exhausted: approx. 1800 MB/s
Cache Folding Speed: 1150 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Drive:

Native TLC write speeds post pSLC Cache: ~ 1.800 MB/s (Avg)
TLC write speeds w/ datafolding: ~ 1.150 MB/s (Avg)

Controller:

3 main cores using Cortex-R5 clocked at 1000 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. (200 - 300 MHz)

NAND Die:

tPROG - 800 µs (withouh Vpp)
tPROG w/ ~ 25% Overhead: ~ 914 µs (Avg 70 MB/s per each die)

Jun 2nd, 2024 02:52 EDT change timezone

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