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Patriot P300 512 GB (SM2263XT)

512 GB
Capacity
SM2263XT
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Patriot P300 is a solid-state drive in the M.2 2280 form factor. It is available in capacities ranging from 128 GB to 2 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Patriot P300 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2263XT from Silicon Motion, a DRAM cache is not available. Patriot has installed 96-layer TLC NAND flash on the P300, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The P300 is rated for sequential read speeds of up to 1,700 MB/s and 1,100 MB/s write; random IO reaches 290K IOPS for read and 260K for writes.
At its launch, the SSD was priced at 75 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Patriot guarantees an endurance rating of 160 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 128 GB 256 GB 512 GB 1 TB 2 TB
Hardware Versions:
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: Unknown
Price at Launch: 75 USD
Part Number: P300P512GM28
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.37 W (Idle)
2.1 W (Avg)
Unknown (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2263XT
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Frequency: 575 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 800 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Part Number: TA7AG55AWV
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 800 MT/s
Capacity: 4 chips @ 1 Tbit
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Dies per Chip: 4 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 59 µs
Program Time (tProg): 625 µs
Die Read Speed: 551 MB/s
Die Write Speed: 56 MB/s
Endurance:
(up to)
1500 P/E Cycles
(3000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1980 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 1,700 MB/s
Sequential Write: 1,100 MB/s
Random Read: 290,000 IOPS
Random Write: 260,000 IOPS
Endurance: 160 TBW
Warranty: 3 Years
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

Drive:

And might also features IMFT NANDs instead of Toshiba's BiCS3 NANDs.

Controller:

The difference between this and the non-XT revision (SM2263, SM2263G, SM2263ENG, etc.) is that this revision doesn't support the DRAM cache, in fact it uses HMB (Host Memory Buffer).

NAND Die:

Read latency tR: 58 µs (ABL)
Performance:
tPROG (typical) - 2100 µs (MSB)
tR (typical) - 59 µs
tPROG (ower page) ~ 200 µs
Estimated tPROG between 625 ~ 975 µs

Jun 2nd, 2024 05:08 EDT change timezone

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