Capacity: | 1 TB (1000 GB) |
---|---|
Overprovisioning: | 92.7 GB / 10.0 % |
Production: | Active |
Released: | Jan 2023 |
Part Number: | Unknown |
Market: | Consumer |
Form Factor: | M.2 2230 (Single-Sided) |
---|---|
Interface: | PCIe 4.0 x4 |
Protocol: | NVMe 2.0 |
Power Draw: | Unknown |
Manufacturer: | Samsung |
---|---|
Name: | Piccolo (S4LY022) |
Architecture: | ARM 32-bit Cortex-R8 |
Core Count: | 6-Core |
Foundry: | Samsung FinFET |
Process: | 5 nm |
Flash Channels: | 4 @ 2,400 MT/s |
Chip Enables: | 4 |
Controller Features: |
HMB
(enabled)
|
Manufacturer: | Samsung |
---|---|
Name: | V-NAND V7 |
Type: | TLC |
Technology: | 176-layer |
Speed: | 2000 MT/s |
Capacity: | 1 chip @ 8 Tbit |
Toggle: | 5.0 |
Topology: | Charge Trap |
Die Size: | 60 mm² (8.5 Gbit/mm²) |
Dies per Chip: | 16 dies @ 512 Gbit |
Planes per Die: | 4 |
Decks per Die: | 2 |
Word Lines: |
191 per NAND String
92.1% Vertical Efficiency |
Read Time (tR): | 40 µs |
Program Time (tProg): | 347 µs |
Block Erase Time (tBERS): | 3.5 ms |
Die Read Speed: | 1600 MB/s |
Die Write Speed: | 184 MB/s |
Page Size: | 16 KB |
Type: | None |
---|---|
Host-Memory-Buffer (HMB): | 64 MB |
Sequential Read: | 6,000 MB/s |
---|---|
Sequential Write: | 5,600 MB/s |
Random Read: | 900,000 IOPS |
Random Write: | 1,000,000 IOPS |
Endurance: | Unknown |
Warranty: | Unknown |
SLC Write Cache: | Yes |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | Yes |
NAND Die:Upper Deck: 101 Gates |